A-POWER AP2607AGY-HF

AP2607AGY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
▼ Halogen Free & RoHS Compliant Product
BVDSS
-20V
RDS(ON)
52mΩ
ID
G
-5A
S
S
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
SOT-26
D
D
The SOT-26 package is widely used for all commercial-industrial
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-20
V
+8
V
3
-5
A
3
-4
A
-20
A
2
W
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
62.5
℃/W
Data and specifications subject to change without notice
1
201104222
AP2607AGY-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, ID=-5A
-
-
52
mΩ
VGS=-2.5V, ID=-4A
-
-
65
mΩ
VGS=-1.8V, ID=-1A
-
-
90
mΩ
-0.3
-
-1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-5A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= + 8V, VDS=0V
-
-
+100
nA
ID=-5A
-
13
21
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
VDS=-10V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
23
-
ns
tf
Fall Time
RD=10Ω
-
31
-
ns
Ciss
Input Capacitance
VGS=0V
-
1030 1650
pF
Coss
Output Capacitance
VDS=-20V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2607AGY-HF
20
20
T A =25 o C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
16
V G = -2.0V
12
8
4
V G = -2.0V
65mΩ
12
8
4
0
0
0
1
2
3
4
0
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D =-4A
I D =-4.2A
T A =25 o C o
T A =25 C
I D = -5A
V GS = -4.5V
Normalized RDS(ON)
1.6
60
RDS(ON) (mΩ )
-5.0V
-4.5V
-3.5V
-2.5V
TA=150oC
-5.0V
-4.5V
-3.5V
-2.5V
50
1.4
1.2
1
40
0.8
30
0.6
0
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
5
Normalized -VGS(th) (V)
-IS(A)
4
3
T j =150 o C
2
T j =25 o C
1
0.5
1
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2607AGY-HF
f=1.0MHz
1200
I D = -5A
C iss
1000
6
65mΩ
800
C (pF)
-VGS , Gate to Source Voltage (V)
8
V DS = -10V
4
600
400
2
200
0
C oss
C rss
0
0
5
10
15
20
1
25
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
-ID (A)
10
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 156℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4