AP2338GN-HF - Advanced Power Electronics Corp

AP2338GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V Gate Drive
D
▼ Small Outline Package
▼ Surface Mount Device
S
▼ Halogen Free & RoHS Compliant Product
SOT-23
BVDSS
30V
RDS(ON)
35mΩ
ID
5A
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23 package is widely used for commercial-industrial surface mount
applications.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
+8
V
3
5
A
3
4
A
20
A
1.38
W
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201103241
AP2338GN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=4.5V, ID=5A
-
-
35
mΩ
VGS=2.5V, ID=2.5A
-
-
45
mΩ
VGS=1.8V, ID=1A
-
-
75
mΩ
0.3
-
1.2
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=5A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
8.5
14
nC
Qgs
Gate-Source Charge
VDS=15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=5V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
460
740
pF
Coss
Output Capacitance
VDS=15V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2338GN-HF
30
30
o
5.0V
4.5V
3.5V
2.5V
T A =150 C
5.0V
4.5V
3.5V
2.5V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
20
10
20
10
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
5
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
100
2.0
I D =1A
I D =5A
V G =4.5V
T A =25 o C
80
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
60
40
1.2
0.8
20
0.4
0
1
2
3
4
-50
5
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D =1mA
1.5
IS(A)
Normalized VGS(th) (V)
6
T j =150 o C
4
T j =25 o C
2
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2338GN-HF
f=1.0MHz
8
800
6
600
C (pF)
VGS , Gate to Source Voltage (V)
I D =5A
V DS =15V
4
C iss
400
200
2
C oss
C rss
0
0
0
4
8
12
1
16
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
Operation in this
area limited by
RDS(ON)
10
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
1ms
10ms
0.1
100ms
1s
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 270℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
ID , Drain Current (A)
V DS =5V
VG
QG
20
4.5V
QGS
QGD
10
T j =150 o C
T j =25 o C
Charge
T j = -40 o C
0
0
1
2
3
4
Q
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4