A-POWER AP2320GN-HF

AP2320GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
100V
RDS(ON)
5Ω
ID
0.25A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial
applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current3, VGS @ 10V
0.25
A
[email protected]=70℃
Continuous Drain Current3, VGS @ 10V
0.2
A
1
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
0.7
W
Linear Derating Factor
0.005
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
180
℃/W
1
201211145
AP2320GN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.25A
-
-
5
Ω
VGS=4.5V, ID=0.2A
-
-
9
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=0.2A
-
0.2
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=0.4A
-
2
3.2
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.5
-
nC
VDS=50V
-
3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=0.4A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
9.5
-
ns
tf
Fall Time
VGS=10V
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
32
51
pF
Coss
Output Capacitance
VDS=25V
-
9.5
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=0.4A, VGS=0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=1A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
28
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ;400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2320GN-HF
1
1
o
ID , Drain Current (A)
0.8
T A = 150 C
0.8
ID , Drain Current (A)
T A =25 C
0.6
V G = 4.0V
0.4
10V
9 .0V
8 .0V
7.0 V
V G = 6 .0 V
o
10V
7.0V
6.0V
5.0V
0.6
0.4
0.2
0.2
0
0
0
4
8
12
0
16
4
V DS , Drain-to-Source Voltage (V)
8
12
16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I D = 0.25 A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.4
10
I D =250uA
T j =150 o C
Normalized VGS(th)
IS(A)
1.2
T j =25 o C
1
1.0
0.8
0.6
0.4
0.1
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2320GN-HF
f=1.0MHz
100
I D = 0.4 A
V DS =80V
10
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
10
C rss
4
2
0
1
0
1
2
1
3
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
1
100us
ID (A)
Operation in this
area limited by
RDS(ON)
1ms
10ms
0.1
100ms
1s
0.01
T A =25 o C
Single Pulse
DC
0.001
0.2
0.1
0.1
PDM
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 400℃/W
Single Pulse
0.01
0.1
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4