MOSFET SMD Type Product specification BSS138 ■ Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS (V) = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-to-source voltage Parameter VDSS 50 V Gate-to-source voltage VGS ±20 V 200 mA 800 mA 300 mW RθJA 417 ℃/W TJ, Tstg -55 to 150 ℃ Drain Current – Continuous ID – Pulsed PD Total power dissipation @ TA = 25℃ Thermal resistance,junction-to-ambient Operating and storage temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Drain-to-source breakdown voltage Zero Gate Voltage Drain Current Symbol Test conditons Min V(BR)DSS VGS = 0 V, ID = 250 μA 50 IDSS VDS = 50 V, VGS = 0 IGSS VGS = ± 20 V, VDS = 0 Gate-source threshold voltage VGS(th) VDS = VGS, ID = 1.0 mA Static drain-to-source on-rResistance RDS(on) Gate-source leakage current 0.8 VGS = 10V, ID = 0.22A VGS = 4.5V, ID = 0.22A Forward transconductance gfs Input capacitance Ciss Output capacitance Coss Typ Max Unit 0.5 μA ±0.1 μA 1.5 V 3.5 Ω V 6 VDS = 25 V, ID = 200 mA, f = 1.0 kHz 100 VDS = 10 V, VGS = 0, f = 1 MHz Ω mS 50 pF 25 pF Transfer capacitance Crss 8 pF Turn-on delay time td(on) 20 ns Turn-off delay time td(off) 20 ns VDD = 30 V, ID = 0.2 A,RGEN = 50 ■ Marking Marking J1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 MOSFET SMD Type Product specification BSS138 ID, DRAIN-SOURCE CURRENT (A) Tj = 25°C 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0.7 150°C 0.4 0.3 0.2 0.1 0 0 2 2.25 1.8 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 2.45 1.85 6 5 25°C 4 3 -55°C 2 1 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current 0 http://www.twtysemi.com 4.5 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V 7 4 -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature -5 45 145 95 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On-Resistance vs. Junction Temperature 150°C 0.5 1 2.5 1.5 2 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 0 -55 0.65 -55 8 25°C 0.5 2 2.05 -55 °C VDS = 1V 0.6 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0 1 0.8 VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) 0.6 [email protected] 9 8 VGS = 2.75V 7 150°C 6 5 4 25°C 3 2 -55°C 1 0 0.1 0.15 0.25 0.2 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 4008-318-123 2 of 3 MOSFET SMD Type Product specification 6 VGS = 4.5V 5 150°C 4 3 2 25°C 1 -55°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) BSS138 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0 1 3.5 VGS = 10V 3 150°C 2.5 2 1.5 25° C 1 -55°C 0.5 0 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain-Current 0 100 0.1 150°C -55°C 0.01 25°C C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz CiSS 10 COSS CrSS 1 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage http://www.twtysemi.com [email protected] 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage 4008-318-123 3 of 3