2N4029, 2N4033 Product Preview Small Signal Switching Transistor PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC 1 Adc Total Device Dissipation @ TA = 25°C 2N4029 2N4033 PT Total Device Dissipation @ TC = 25°C 2N4029 2N4033 PT Operating and Storage Junction Temperature Range 1 EMITTER W 0.5 0.8 W 1.0 4.0 TJ, Tstg −65 to +200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient 2N4029 2N4033 RqJA Thermal Resistance, Junction−to−Case 2N4029 2N4033 RqJC TO−18 CASE 206AA STYLE 1 2N4029 TO−39 CASE 205AB STYLE 1 2N4033 THERMAL CHARACTERISTICS °C/W 325 195 ORDERING INFORMATION Level JAN °C/W 150 40 Device Package Shipping 2N4029 TO−18 Bulk 2N4033 TO−39 Bulk JANTX JANTXV Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. P0 1 Publication Order Number: 2N4029/D 2N4029, 2N4033 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit −80 − − −25 − − −10 −10 mA nA − − −10 −25 mA nA 50 100 70 25 − 300 − − − − − −0.15 −0.5 −1.0 − − −0.9 −1.2 1.5 6.0 − 20 − 80 OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −10 mAdc) Collector −Emitter Cutoff Current (VCE = −60 Vdc) ICES Collector−Base Cutoff Current (VCB = −80 Vdc, IE = 0) (VCB = −60 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VEB = −5 Vdc) (VEB = −3 Vdc) IEBO Vdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −0.1 mAdc, VCE = −5 Vdc) (IC = −100 mAdc, VCE = −5 Vdc) (IC = −500 mAdc, VCE = −5 Vdc) (IC = −1 Adc, VCE = −5 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) (IC = −1 Adc, IB = −100 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Magnitude of Small−Signal Current Gain (IC = −50 mAdc, VCE = −10 Vdc, f = 100 MHz) |hfe| Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo Input Capacitance (VEB = −0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo − pF pF SWITCHING CHARACTERISTICS Delay Time (Reference Figure in MIL−PRF−19500/512) td − 15 ns Rise Time (Reference Figure in MIL−PRF−19500/512) tr − 25 ns Storage Time (Reference Figure in MIL−PRF−19500/512) ts − 175 ns Fall Time (Reference Figure in MIL−PRF−19500/512) tf − 35 ns 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N4029, 2N4033 PACKAGE DIMENSIONS TO−18 3 CASE 206AA ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- 2N4029, 2N4033 PACKAGE DIMENSIONS TO−39 3−Lead CASE 205AB ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 3X 0.007 (0.18MM) A B S C DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.48 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 12.70 14.73 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.019 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 0.500 0.580 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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