Die Datasheet GB05SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE (version 4) software for simulation of the GB05SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB05SHT12-CAL SPICE Model * .SUBCKT GB05SHT12 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0021); Temperature Dependant Resistor D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model .MODEL GB05SHT12_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF 112.92 + EG 1.2 XTI 3 + CJO 3.00E-10 VJ 0.419 + M 1.6 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 5 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GB05SHT12_PIN D + IS 2.93E-12 RS 0.35326 + N 4.6113 IKF 0.0043236 + EG 3.23 XTI 60 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 2.5 + TYPE SiC_PiN .ENDS * * End of GB05SHT12-CAL SPICE Model Sep 2013 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1