Datasheet

AOT3N100/AOTF3N100
1000V,2.8A N-Channel MOSFET
General Description
Product Summary
The AOT3N100 & AOTF3N100 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
VDS
ID (at VGS=10V)
[email protected]
2.8A
RDS(ON) (at VGS=10V)
< 6Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT3N100 & AOTF3N100L
Top View
D
TO-220F
TO-220
G
AOT3N100
D
G
S
AOTF3N100
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT3N100
AOTF3N100
Symbol
Drain-Source Voltage
VDS
1000
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
±30
V
2.8
ID
Units
V
2.8*
1.8
1.8*
A
Pulsed Drain Current C
IDM
10
Avalanche Current C
IAR
2.2
A
Repetitive avalanche energy C
EAR
72
mJ
145
5
mJ
V/ns
W
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
TJ, TSTG
Junction and Storage Temperature Range
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Case-to-sink A
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev. 1.0 January 2013
132
38
1.1
0.3
-55 to 150
W/ oC
°C
300
°C
AOT3N100
65
0.5
0.95
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AOTF3N100
65
-3.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT3N100/AOTF3N100
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
1000
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
1100
V
ID=250µA, VGS=0V
1.07
V/ oC
VDS=1000V, VGS=0V
1
VDS=800V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
3.3
µA
4
4.5
nΑ
V
6
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
4.8
gFS
Forward Transconductance
VDS=40V, ID=1.5A
4
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
2.8
A
ISM
Maximum Body-Diode Pulsed Current
10
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
S
0.76
550
690
830
pF
30
44
60
pF
2
5
8
pF
1.6
3.5
5.2
Ω
15
20
nC
10
VGS=10V, VDS=800V, ID=3A
3.8
nC
Gate Drain Charge
4.7
nC
tD(on)
Turn-On DelayTime
22
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
40
ns
tf
trr
Turn-Off Fall Time
IF=3A,dI/dt=100A/µs,VDS=100V
300
400
500
Qrr
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
2.7
3.7
4.7
Body Diode Reverse Recovery Time
VGS=10V, VDS=500V, ID=3A,
RG=25Ω
24
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 January 2013
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Page 2 of 6
AOT3N100/AOTF3N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
5
VDS=40V
10V
4
-55°C
10
6V
ID(A)
ID (A)
3
5.5V
2
125°C
1
1
VGS=5V
25°C
0
0
5
10
15
20
25
VDS (Volts)
Fig 1: On-Region Characteristics
0.1
30
2
15
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
3
12
RDS(ON) (Ω
Ω)
4
9
VGS=10V
6
3
2.5
VGS=10V
ID=1.5A
2
1.5
1
0.5
0
0
0
1
2
3
4
5
6
-100
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
1.2
1E+00
40
125°C
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
1E-02
25°C
0.9
1E-03
1E-04
0.8
-100
-50
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev.1.0 January 2013
0
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT3N100/AOTF3N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=800V
ID=3A
1000
Ciss
100
Coss
10
Crss
Capacitance (pF)
VGS (Volts)
12
9
6
3
1
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
25
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
100.0
10.0
10
10µs
RDS(ON)
limited
100µs
1.0
DC
1ms
10ms
0.1
10µs
RDS(ON)
limited
ID (Amps)
ID (Amps)
1
100µs
1
1ms
DC
0.1
TJ(Max)=150°C
TC=25°C
0.1s
1s
TJ(Max)=150°C
TC=25°C
0.0
10ms
0.01
1
10
100
VDS (Volts)
1000
10000
1
10
100
1000
10000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF3N100 (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT3N100 (Note F)
Current rating ID(A)
5
4
3
2
1
0
0
25
75
100
125
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev.1.0 January 2013
50
150
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Page 4 of 6
AOT3N100/AOTF3N100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.95°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT3N100 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF3N100 (Note F)
Rev.1.0 January 2013
0.0001
0.001
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100
Page 5 of 6
AOT3N100/AOTF3N100
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 January 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6