Transistors SMD Type PNP Transistors TIP42 Series (KIP42 Series) TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 ■ Features +0.15 1.50 -0.15 Unit: mm +0.1 2.30 -0.1 +0.8 0.50 -0.7 3 .8 0 ● Medium Power Linear Switching Applications 0.60-+ 0.1 0.1 +0.15 5.55 -0.15 +0.25 2.65 -0.1 2.3 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 ● Complement to TIP41/41A/41B/41C +0.15 4 .60 -0.15 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol TIP42 TIP42A TIP42B TIP42C Collector - Base Voltage VCBO -40 -60 -80 -100 Collector - Emitter Voltage VCEO -40 -60 -80 -100 Emitter - Base Voltage VEBO -6 Collector Current - Pulse ICP -10 Base Current IB 2 Collector Power Dissipation Tc=25°C Ta=25°C Junction Temperature Storage Temperature range PC V -5 IC Collector Current - Continuous Unit 20 2 TJ 150 Tstg -65 to 150 A W ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors TIP42 Series (KIP42 Series) ■ Electrical Characteristics Ta = 25℃ Symbol Parameter Test Conditions TIP42 Collector- base breakdown voltage Collector-emitter sustaining voltage TIP42A VCBO TIP42B Ic= -100 μA， IE=0 -40 VEBO Collector-base cut-off current Ic= -30 mA， IB=0 Collector- emittercut-off current Collector- emittercut-off current Emitter cut-off current IE= -100μA， IC=0 VCB= -40 V , IE=0 TIP42A VCB= -60 V , IE=0 TIP42B VCB= -80 V , IE=0 TIP42C VCB= -100 V , IE=0 TIP42/42A VCE= -30 V , IE=0 TIP42B/42C VCE= -60 V , IE=0 TIP42 VCE= -40 V , IE=0 TIP42A VCE= -60 V , IE=0 TIP42B VCE= -80 V , IE=0 TIP42C VCE= -100 V , IE=0 ICES IEBO -60 -80 -5 VEB= -5V , IC=0 -0.1 uA -0.7 mA -400 uA -1 mA Collector-emitter saturation voltage VCE(sat) IC=-6 A, IB=-600mA -1.5 Base - emitter saturation voltage VBE(sat) VCE= -4V, IC= -6 A -2 DC current gain Transition frequency 2 ICEO V -100 TIP42 ICBO www.kexin.com.cn hFE(1) hFE(2) fT Unit -80 TIP42 TIP42C Emitter - base breakdown voltage Max -60 -100 TIP42B Typ -40 TIP42C TIP42A VCEO(SUS) Min VCE= -4V, IC= -300 mA 30 VCE= -4V, IC= -3 A 15 VCE= -10V, IC= -500mA 3 V 75 MHz Transistors SMD Type PNP Transistors TIP42 Series (KIP42 Series) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE ■ Typical Characterisitics 1000 hFE, DC CURRENT GAIN VCE = -4V 100 10 1 - 0 .0 1 - 0 .1 -1 - 10 -2.0 IC /IB = 10 -1.6 VBE(sat) -1.2 -0.8 VCE(sat) -0.4 -0.0 -0.01 -0.1 Figure 1. DC current Gain -100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 25 IC(MAX) (PULSE) -10 0.5 s 5m ms s 1m IC(MAX) (DC) -1 TIP42 TIP42A TIP42B TIP42C -1 -1 0 -1 0 0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area PC[W], POWER DISSIPATION -100 IC[A], COLLECTOR CURRENT -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT -0.1 -1 20 15 10 5 0 0 25 50 75 100 125 150 175 o T C[ C], CASE TEMPERATURE Figure 4. Power derating www.kexin.com.cn 3