Transistors SMD Type NPN Transistors KRC231S ~ KRC235S SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● With Built-in Bias Resistors. +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 1 0.55 C ● Simplify Circuit Design. 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 R1 1.1 +0.2 -0.1 B 1. Base 0-0.1 E +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 15 Emitter - Base Voltage VEBO 5 Unit V Collector Current - Continuous IC 600 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 15 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 30 V , IE= 0 0.5 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=2.5mA 0.08 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=2.5mA 1.2 hFE VCE= 5V, IC= 50mA DC current gain Input Resistor 200 2.2 KRC232S 5.6 RI 10 KRC234S 4.7 KRC235S 6.8 On Resistance Ron Transition frequency fT uA V 800 KRC231S KRC233S Unit KΩ IB= 1mA, VIN= 300mV,f=1KHz 0.6 Ω VCE= 10V, IE= -50mA,f=100MHz 200 MHz ■ Marking Type KRC231S KRC232S KRC233S KRC234S KRC235S Marking NW NY NZ NNA NNB www.kexin.com.cn 1 Transistors SMD Type NPN Transistors KRC231S ~ KRC235S ■ Typical Characterisitics h FE - I C DC CURRENT GAIN h FE 2k 1k 300 100 30 10 C O M M O N E M IT T E R V C E =5V T a=25 C 3 1 0.1 0.3 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) ON RESISTANCE R on (Ω) 1k I B=1mA 100 ~ 30 Vh v Vh 10 f=1kHz V IN =0.3V 3 1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 BASE CURRENT I B (mA) 2 www.kexin.com.cn 500 300 C O M M O N E M IT T E R V C E =5V T a=25 C 100 50 30 IC /IB =20 IC /IB =10 10 5 3 1 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) R on - I B 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) V CE(sat) - I C 30 100 1k