JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMX1N General purpose transistors(dual transistors) SOT-363 FEATURES z Two 2SC2412K chips in a SOT-363 package z Mounting possible with SOT-363 automatic mounting machines z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half (3) (2) (1) Tr1 Tr2 MARKING:X1 (4) (5) (6) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ M ax Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA,f=100MHz 180 VCB=12V,IE=0,f=1MHz 2.0 V MHz 3.5 pF B,Feb,2012