JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes UMG3N SOT-353 General purpose transistors (dual transistors) FEATURES z Two DTC143T chips in a package z Mounting possible with SOT-353 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. 1 Marking: G3 (3) Equivalent circuit (2) R1 DTr2 (4) (1) R1 DTr1 (5)/(6) Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 mW Tj Junction temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Test conditions Min Typ Max Unit IC=50μA,IE=0 50 V(BR)CEO IC=1mA,IB=0 50 V V(BR)EBO IE=50μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA hFE VCE=5V,IC=1mA DC current gain Collector-emitter saturation voltage VCE(sat) Transition frequency fT Input resistor R1 V 100 600 IC=5mA,IB=0.25mA 0.3 VCE=10V,IE=-5mA, f=100MHz 250 3.29 4.7 V MHz 6.11 KΩ A,Dec,2010