ES D - Ro bu st B FP 740 FE SD 2.3~ 2.7 G Hz Wi Fi/ Wi MA X L NA Applic atio ns Applic atio n N ote A N 217 Revision: Rev. 1.0 2010-07-08 RF and P r otectio n D evic es Edition 2010-07-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 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Last Trademarks Update 2009-10-19 Application Note AN217, Rev. 1.0 3 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Table of Content 1 Introduction ........................................................................................................................................ 5 2 Application Information ..................................................................................................................... 6 3 Typical Measurement Results ........................................................................................................... 8 4 Measured Graphs ............................................................................................................................... 9 5 Evaluation Board and layout Information ...................................................................................... 14 6 ESD Protection ................................................................................................................................. 15 Authors .............................................................................................................................................. 17 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Application Diagra ................................................................................................................................ 5 Schematics of the application circuit .................................................................................................... 6 K Factor of stability ............................................................................................................................... 9 Input Return loss S11 ........................................................................................................................... 9 Output Return Loss S22 ..................................................................................................................... 10 Forward Gain S21 .............................................................................................................................. 10 Reverse Isolation S12 ........................................................................................................................ 11 Noise Figure ....................................................................................................................................... 12 IIP3= -33dBm+ 58/2=-4dBm, OIP3=-4+17.5=13.5dB ........................................................................ 13 Input [email protected], Output P1dB=6.1dBm ................................................................... 13 Photo Picture of Evaluation Board ..................................................................................................... 14 PCB Layout Information ..................................................................................................................... 14 List of Tables Table 1 Table 2 Bill-of-Materials ..................................................................................................................................... 7 Electrical Characteristics (at room temperature) .................................................................................. 8 Application Note AN217, Rev. 1.0 4 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Introduction 1 Introduction The BFP740FESD is one of outstanding performance RF bipolar transistors intented to a wide range of wireless applications. It is based upon Infineon Technologies’ B7HF 220 GHz fT Silicon Germanium Carbon (SiGe:C) technology, allowing for a cost-effective solution with excellent performance at low current consumption. Besides RF bipolar transistor, Infineon Technologies Provides also an interesting range of components for WIFI/WIMAX systems like the Discretes switches, WIFI/WIMAX MMIC and Diodes for additive ESD protection. 1.1 Applications The actual application note presents the performance of BFP740FESD protected by an ESD protection diode circuit (maximum peak voltage of 3kV). Using BFP740FESD on electronic applications offers the security to protect the devices by Electro Static Discharge. Therefore, the BFP740FESD avoids adding additional part in order to protect the system of ESD. The BFP740FESD is presented here using external parts for WLAN & WiMAX configuration. (please refer to Figure 1). Rx Diplexer DPDT Balun WLAN / WiMAX Transceiver & Baseband BFP740FESD Antenna diversity Tx Diplexer Figure 1 LNA PA Balun Application Diagra Application Note AN217, Rev. 1.0 5 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Application Information 2 Application Information This amplifier for WIFI/WIMAX application shown in Figure2 is realized by using 11 pieces of external components. The resistors of R1,R2 and R3 make BFP740FESD working with 13.1 mA at 2.9 V. The microsrips of TL1 and TL2 in between emitter and ground can improve the input matching and IIP3. R2 makes big contribution to stability and RF matching. In order to avoid unexpected feedback amoung the input, output, Vcc line and emitter grounding, the grounding positions of C2, C3/C4 and the microstrips M1 must be well separated. Table 1 shows the bill of materials used in this circuit. 2.1 Schematics V cc = 3.3 V J2 DC Connector C5 100nF R1 36 kohms C4 8.2pF R3 20 ohms R2 12 ohms L2 10nH RF C1 27pF M1 Figure 2 C6 100nF C2 2.2pF L1 4.7nH J3 C3 3.3pF Q1 M1 I = 13.1 mA BFP740FESD SiGe Transistor Schematics of the application circuit Application Note AN217, Rev. 1.0 6 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Table 1 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C1 27pF pF 0402 various DC block C2 2.2 pF 0402 various C3 3.3 pF 0402 various Output matching/DC block C4 8.2 pF 0402 various RF short C5 100 nF 0402 various IP3 improvement Out put matching C6 100 nF 0402 various RF short L1 4.7 nH 0402 various Output matching L2 10 nH 0402 various Input matching R1 36 kΩ 0402 various DC biasing R2 12 Ω 0402 various Stability impovement R3 20 Ω 0402 various DC biasing Q1 BFP740FESD TSFP-4-1 Infineon Active device Application Note AN217, Rev. 1.0 7 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Typical Measurement Results 3 Typical Measurement Results The amplifier for WiFI/WIMAX application is covering 2.3~2.7GHz with a good matching. At typical frequency of 2.45GHz, The absolutely stable solution with BFP740FESD offers the Gain of 17.6dB and the Noise Figure of 0.78dB, featuring 13.6dBm of OIP3 and 9.4dB of OP1dB. Table 2 Electrical Characteristics (at room temperature) Text Parameter Symbol Value Unit Frequency Range Freq 2.3~2.7 GHz DC Voltage Vcc 3.3 V DC Current Icc 13.1 mA Gain G 17.6 dB f=2450MHz Noise Figure NF 0.78 dB f=2450MHz Input Return Loss RLin -12.9 dB f=2450MHz Output Return Loss RLout -15.7 dB f=2450MHz Reverse Isolation IRev -26 dB f=2450MHz Input P1dB IP1dB -7.5 dBm F=2450MHz Output P1dB OP1dB 9.4 dBm F=2450MHz Input IP3 IIP3 dBm [email protected] [email protected] Output IP3 OIP3 dBm [email protected] [email protected] Stability k Application Note AN217, Rev. 1.0 -4 13.6 >1 -- 8 / 18 Comment/Test Condition Over 0.1~6GHz 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Measured Graphs 4 Measured Graphs 5.0 4.5 4.0 StabFact1 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 0.6 1.1 1.6 2.1 2.6 3.1 3.6 4.1 4.6 5.1 5.6 6.0 freq, GHz Figure 3 K Factor of stability 5 m1 freq=2.450GHz dB(S(1,1))=-12.932 0 dB(S(1,1)) -5 -10 m1 -15 -20 -25 -30 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 4 Input Return loss S11 Application Note AN217, Rev. 1.0 9 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Measured Graphs 5 m2 freq=2.245GHz dB(S(2,2))=-14.211 0 dB(S(2,2)) -5 -10 m2 -15 -20 -25 -30 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 5 Output Return Loss S22 40 m3 20 dB(S(2,1)) 0 m3 freq=2.450GHz dB(S(2,1))=17.585 -20 -40 -60 -80 0 1 2 3 4 5 6 freq, GHz Figure 6 Forward Gain S21 Application Note AN217, Rev. 1.0 10 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Measured Graphs -10 -20 m4 dB(S(1,2)) -30 -40 -50 m4 freq=2.450GHz dB(S(1,2))=-26.297 -60 -70 -80 -90 0 1 2 3 4 5 6 freq, GHz Figure 7 Reverse Isolation S12 Application Note AN217, Rev. 1.0 11 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Measured Graphs NF,dB 2 [email protected] 1 0 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 freq, GHz Figure 8 Noise Figure Application Note AN217, Rev. 1.0 12 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Measured Graphs Figure 9 IIP3= -33dBm+ 58/2=-4dBm, OIP3=-4+17.5=13.5dB [email protected], [email protected] m1 18.0 -30dbm,17.94dB 17.5 m2 Gain, dB 17.0 -7.5dBm, 16.94dB 16.5 16.0 15.5 15.0 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 input power, dBm Figure 10 Input [email protected], Output P1dB=6.1dBm Application Note AN217, Rev. 1.0 13 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Evaluation Board and layout Information 5 Evaluation Board and layout Information Figure 11 Photo Picture of Evaluation Board PCB CROSS SECTION 0.012 inch / 0.305 mm TOP LAYER INTERNAL GROUND PLANE 0.028 inch / 0.711 mm ? LAYER FOR MECHANICAL RIGIDITY OF PCB, THICKNESS HERE NOT CRITICAL AS LONG AS TOTAL PCB THICKNESS DOES NOT EXCEED 0.045 INCH / 1.14 mm (SPECIFICATION FOR TOTAL PCB THICKNESS: 0.040 + 0.005 / - 0.005 INCH; 1.016 + 0.127 mm / - 0.127 mm ) BOTTOM LAYER Figure 12 PCB Layout Information Application Note AN217, Rev. 1.0 14 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD ESD Protection 6 ESD Protection Electrostatic discharge (ESD) plays an important role when ESD sensitive devices are connected to exposed interfaces or antennas that can be touched by humans. This is usually applicable to low noise amplifiers (LNAs) and therefore LNAs must be properly protected against ESD in order to avoid irreversible damage of the LNA. For mobile applications low voltage supply and low current consumption is a major issue that requires new technologies with smaller transistor structures. However, the smaller the transistor structure the more sensitive the transistor is to ESD events. Therefore, RF-LNAs based on new front-end technologies have already ESD protection elements integrated onchip, e.g. BFP740FESD, BFP640FESD, BFP540FESD. These on-chip ESD protection techniques are always a compromise between good ESD protection and RF performance. Integrated RF ESD concepts hardly ever achieve an ESD protection above HBM. An on-chip ESD protection of ±1 kV HBM (component level ESD test JEDEC JESD 22A115) is quite sufficient to protect the chip from ESD events in the manufacturing environment where stringent measures are taken to prevent electrostatic buildup. However in the field, exposed antennas, for example, always require higher ESD protection levels of at least ±8kV up to ±15kV. Additional the more stringent system level test according to IEC61000-4-2 is applied. Therefore an special ESD protection becomes mandatory to handle the majority of the ESD current. An ESD protection based on silicon TVS diodes fits perfect to keep the residual ESD stress for the subsequent device as small as possible. For high frequency applications (2.4GHz and 5GHz WLAN) ESD protection diodes with ultra low line capacitances are required. Infineon offers ultra low clamping voltage and ultra low capacitance, 0.2pF line capacitance, ESD protection diodes in leadless packages of EIA case 0402 (TSLP-2-17) as well as 0201 (TSSLP-2-1): Application Note AN217, Rev. 1.0 15 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD ESD Protection 6.1 ESD0P2RF-02LRH / -02LS The Infineon TVS diode ESD0P2RF has a line capacitance of only 0.2 pF and comes in either a TSLP-2-17 package (1 mm x 0.6 mm x 0.39 mm) or a super small TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm). The ESD0P2 ESD diode is a bidirectional TVS diode with a maximum working voltage of ±5.3V. It is capable of handling TX power levels of up to +20dBm without influencing the signal integrity, EVM and harmonic generation. Therefore it is well suited for WLAN 2.4GHz and for a lot of 5GHz applications as well. Application Note AN217, Rev. 1.0 16 / 18 2010-07-08 AN217 2.3~2.7GHz WIFI/WIMAX Application using BFP740FESD Authors Authors De Bin Leo Li, Senior Application Engineer of Business Unit “RF and Protection Devices” at Infineon Technologies, China. Application Note AN217, Rev. 1.0 17 / 18 2010-07-08 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN217