DATASHEET Radiation Hardened 30V 16-Channel Analog Multiplexer ISL71840SEH Features The ISL71840SEH is a radiation hardened, 16-Channel high ESD protected multiplexer that is fabricated using Intersil’s proprietary P6SOI (Silicon On Insulator) process technology to mitigate single-event effects and total ionizing dose. It operates with a dual supply voltage ranging from ±10.8V to ±16.5V. It has a 4-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select 1 of 16 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them. • DLA SMD# 5962-15219 The ISL71840SEH’s low rON allows for improved signal integrity and reduced power losses. The ISL71840SEH is also designed for cold sparing making it excellent for high reliability applications that have redundancy requirements. It is designed to provide a high impedance to the analog source in a powered off condition, making it easy to add additional backup devices without loading signal sources. The ISL71840SEH also incorporates input analog overvoltage protection, which will disable the switch to protect downstream devices. The ISL71840SEH is available in a 28 Ld CDFP or die form and operates across the extended temperature range of -55°C to +125°C. There is also a 32-Channel version available called the ISL71841SEH offered in a 48 Ld CQFP, please refer to the ISL71841SEH datasheet for more information. For a list of differences please refer to Table 1 on page 3. Related Literature • UG028, “ISL71840SEHEV1Z Evaluation Board User Guide” • Fabricated using P6SOI process technology - Provides latch-up immunity • ESD protection 8kV (HBM) • Rail-to-rail operation • Overvoltage protection • Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typ) • Flexible split rail operation - Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V - Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V • Adjustable logic threshold control with VREF Pin • Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V • Analog overvoltage range (from ground) . . . . . . . . . . . . .±35V • Off switch leakage . . . . . . . . . . . . . . . . . . . . . . . . 100nA (max) • Transition times (TR, TF). . . . . . . . . . . . . . . . . . . . . . 500ns (typ) • Break-before-make switching • Grounded metal lid (internally connected) • Operating temperature range. . . . . . . . . . . .-55°C to +125°C • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)* - SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . .86.4 MeV•cm2/mg * Product capability established by initial characterization. All subsequent lots are assurance tested to 50krad (0.01rad(Si)/s) wafer-by-wafer. • TR004, “Single Event Effects (SEE) Testing of the ISL71840SEH 16:1 30V Mux” ISL71840SEH 600 500 IN01 +125°C IN02 . . . 400 OUT ADC rDS(ON) (Ω) IN03 +25°C 300 200 IN16 100 -55°C 4 0 ADDRESS -15 -10 -5.0 0 5.0 10 15 20 SWITCH INPUT VOLTAGE (V) EN FIGURE 1. TYPICAL APPLICATION June 15, 2015 FN8734.0 -20 1 FIGURE 2. rDS(ON) Vs POWER SUPPLY ACROSS SWITCH INPUT COMMON MODE VOLTAGE AT +25°C CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL71840SEH Table of Contents Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Specifications (15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Specifications (12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Post High Dose Rate Radiation Characteristics (VS = ±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Post High Dose Rate Radiation Characteristics (VS = ±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Post Low Dose Rate Radiation Characteristics (VS = ±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Post Low Dose Rate Radiation Characteristics (VS = ±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-up Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VREF and Logic Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 23 23 23 ISL71840SEH vs ISL71841SEH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 24 24 24 Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Ceramic Metal Seal Flatpack Packages (Flatpack) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Submit Document Feedback 2 FN8734.0 June 15, 2015 ISL71840SEH Ordering Information ORDERING/SMD NUMBER (Note 2) PART NUMBER (Note 1) TEMP RANGE (°C) PACKAGE (RoHS Compliant) PKG. DWG. # 5962R1521901VXC ISL71840SEHVF -55 to +125 28 LD CDFP K28.A ISL71840SEHF/PROTO ISL71840SEHF/PROTO -55 to +125 28 LD CDFP K28.A 5962R1521901V9A ISL71840SEHVX -55 to +125 DIE ISL71840SEHX/SAMPLE ISL71840SEHX/SAMPLE -55 to +125 DIE ISL71840SEHEV1Z Evaluation Board NOTES: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the “Ordering Information” table must be used when ordering. TABLE 1. TABLE OF DIFFERENCES SPEC ISL71840SEH ISL71841SEH Number of Channels 16 32 Supply Current (I+/I-) 350µA (Max) 400µA (Max) 60nA (Max) 120nA (Max) Output Leakage (+125°C) Submit Document Feedback 3 FN8734.0 June 15, 2015 ISL71840SEH Pin Configuration ISL71840SEH (28 LD CDFP) TOP VIEW V+ 1 28 VOUT NC 2 27 V- NC 3 26 IN08 IN16 4 25 IN07 IN15 5 24 IN06 IN14 6 23 IN05 IN13 7 22 IN04 IN12 8 21 IN03 IN11 9 20 IN02 IN10 10 19 IN01 IN09 11 18 EN GND 12 17 A0 VREF 13 16 A1 A3 14 15 A2 Pin Descriptions PIN NAME PIN NUMBER VOUT 28 Output for multiplexer V+ 1 Positive power supply V- 27 Negative power supply NC 2, 3 Not electrically connected INx DESCRIPTION 4, 5, 6, 7, 8, 9, 10, 11, 19, 20, 21, Input for multiplexer 22, 23, 24, 25, 26 Ax 14, 15, 16, 17 EN 18 Enable control for multiplexer (active low) VREF 13 Reference voltage used to set logic thresholds GND 12 Ground LID N/A Package Lid is internally connected to GND (Pin 12) Submit Document Feedback 4 Address lines for multiplexer FN8734.0 June 15, 2015 ISL71840SEH Absolute Maximum Ratings Thermal Information (V+) Thermal Resistance (Typical) JA (°C/W) JC (°C/W) 28 Ld CDFP (Notes 3, 4) . . . . . . . . . . . . . . . 48 4 Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Positive Supply Voltage above GND (Note 5). . . . . . . . . . . . . . . . . +20V Negative Supply Voltage below GND (V-) (Note 5 . . . . . . . . . . . . . . . . . .-20V Maximum Supply Voltage Differential (V+ to V-) (Note 5) . . . . . . . . . . . 40V Maximum Current Through Selected Switch. . . . . . . . . . . . . . . . . . . . 10mA Analog Input Voltage (INx) From GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V Digital Input Voltage Range (EN, Ax) . . . . . . . . . . . . . . . . . . . . . . . . GND to V+ VREF to GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5V ESD Tolerance Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 8kV Charged Device Model (Tested per MIL-PRF-883 3015.7) . . . . . . . 250V Machine Model (Tested per MIL-PRF-883 3015.7) . . . . . . . . . . . . . 250V Recommended Operating Conditions Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C Positive Supply Voltage Above GND (V+) . . . . . . . . . . . . . +10.8V to +16.5V Negative Supply Voltage Below GND (V-) . . . . . . . . . . . . . . .-10.8V to -16.5V Supply Voltage Differential (V+ to V-) . . . . . . . . . . . . . . . . . . . . 21.6V to 33V VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. For JC, the “case temp” location is the center of the package underside. 5. Tested in a heavy ion environment at LET = 86.3 MeV•cm2/mg at +125°C. Electrical Specifications (15V) V+ = 15V, V- = -15V, VAH = 4V, VAL = 0.8V, VREF = VEN = 5V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. MIN (Note 6) TYP MAX (Note 6) UNIT V- - V+ V V± = ±15.0V, ±16.5V IOUT = -1mA, VIN = +5V, -5V - - 500 Ω V± = ±15.0V, ±16.5V IOUT = -1mA, VIN = V+, V- - - 700 Ω rON Match Between Channels VIN = +5V, -5V; IOUT = -1mA - 10 20 Ω ON-resistance Flatness VIN = +5V, -5V - - 25 Ω V+ - VIN = 5V, V± = ±16.5V, All unused inputs are tied to V- + 5V -10 - 10 nA Post radiation -100 - 100 nA V- + VIN = 5V, V± = ±16.5V All other inputs = V+ - 5V TA = +25°C -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -100 - 100 nA VIN = +25V, V± = VEN = VA = VREF = 0V TA = +25°C, V± = 0V -10 - 10 nA TA = -55°C, +125°C -10 - 80 nA Post radiation -100 - 100 nA VIN = -25V, V± = VEN = VA = VREF = 0V TA = +25°C, V± = 0V -10 - 10 nA TA = -55°C, +125°C -80 - 10 nA Post radiation -100 - 100 nA PARAMETER DESCRIPTION VS Analog Input Signal Range rON Channel ON-resistance ΔrON RFLAT(ON) IS(OFF) Switch Off Leakage IS(OFF) POWER OFF Switch Off Leakage with Device Powered Off Submit Document Feedback 5 TEST CONDITIONS FN8734.0 June 15, 2015 ISL71840SEH Electrical Specifications (15V) V+ = 15V, V- = -15V, VAH = 4V, VAL = 0.8V, VREF = VEN = 5V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) PARAMETER IS(OFF) POWER OFF Switch Off Leakage with Device Powered Off IS(ON) OVERVOLT IS(OFF) OVERVOLT ID(OFF) MIN (Note 6) TYP MAX (Note 6) UNIT VIN = +25V, VEN/VA/VREF = 0V V± = OPEN, TA = +25°C -10 - 10 nA TA = -55°C, +125°C -10 - 80 nA Post radiation -100 - 100 nA VIN = -25V, VEN/VA/VREF = 0V V± = OPEN, TA = +25°C -10 - 10 nA TA = -55°C, +125°C -80 - 10 nA Post radiation -100 - 100 nA VIN = +35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -80 - 80 nA Post radiation -500 - 500 nA VIN = -35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -500 - 500 nA VIN = +35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA DESCRIPTION Switch On Leakage Current Into the Source (overvoltage) Switch Off Leakage Current Into the Source (overvoltage) Switch Off Leakage Submit Document Feedback 6 TEST CONDITIONS TA = +125°C -80 - 80 nA Post radiation -750 - 750 nA VIN = -35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -750 - 750 nA VOUT = V+ - 5V, All inputs = V- + 5V V± = ±16.5V, TA = +25°C, -55°C -10 - 10 nA TA = +125°C 0 - 60 nA Post radiation -80 - 80 nA VOUT = V- + 5V, All inputs = V+ - 5V V± = ±16.5V, TA = +25°C, -55°C -10 - 10 nA TA = +125°C -60 - 0 nA Post radiation -80 - 80 nA FN8734.0 June 15, 2015 ISL71840SEH Electrical Specifications (15V) V+ = 15V, V- = -15V, VAH = 4V, VAL = 0.8V, VREF = VEN = 5V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) MIN (Note 6) TYP MAX (Note 6) UNIT VOUT = 0V, VIN = +35V, V± = ±16.5V All unused inputs are tied to GND -10 - 10 nA Post radiation -500 - 500 nA VOUT = 0V, VIN = -35V, V± = ±16.5V All unused inputs are tied to GND -10 - 10 nA Post radiation -500 - 500 nA -10 - 10 nA TA = +125°C 0 - 60 nA Post radiation -100 - 100 nA V- VIN = VOUT = + 5V, TA = +25°C, -55°C All unused inputs = V -+ 5V, V± = ±16.5V -10 - 10 nA TA = +125°C -60 - 0 nA Post radiation -100 - 100 nA Logic Input High/Low Voltage VREF = 5.0V 1.2 - 1.6 V IAH, IENH Input Current with VAH, VENH VA = VEN = 4.0V V+ = 16.5V, V- = -16.5V -100 - 100 nA IAL, IENL Input Current with VAL, VENL VA = VEN = 0.8V V+ = 16.5V, V- = -16.5V -100 - 100 nA I+ Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V - - 350 µA PARAMETER ID(OFF) OVERVOLT ID(ON) VAH/L, VENH/L DESCRIPTION Switch Off Leakage Current Into the Drain (overvoltage) Switch On Leakage Current Into the Source/Drain TEST CONDITIONS V+ - VIN = VOUT = 5V, TA = +25°C, -55°C All unused inputs = V- + 5V, V± = ±16.5V I- Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V -350 - - µA I+ Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V - - 350 µA I- Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V -350 - - µA IREF Supply Current Into VREF VREF = 5.5V, VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V - - 35 µA tALH Transition Time Figures 4, 5 - 0.5 800 ns tAHL Transition Time Figures 4, 5 - 0.5 800 ns tBBM Break-before-make Delay Figures 8, 9 5 50 200 ns Post radiation 5 - 400 ns tENABLE Enable Turn-on Time Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns tDISABLE Disable Turn-off Time Figures 6, 7 - 0.5 600 ns DYNAMIC Post radiation - - 800 ns VCTE Charge Injection CL = 100pF, VIN = 0V, (Figure 6) - 2 5 pC VISO Off Isolation VEN = 0V, RL = 1kΩ, f = 100kHz -90 - - dB VCT Crosstalk VEN = 4V, f = 100kHz, VP-P = 1V -90 - - dB CA CIN(OFF) COUT(OFF) Digital Input Capacitance Input Capacitance Output Capacitance Submit Document Feedback 7 f = 1MHz, V+ f = 1MHz, V+ f = 1MHz, V+ = V- = 0V - - 7 pF = V- = 0V - - 5 pF = V- = 0V - - 50 pF FN8734.0 June 15, 2015 ISL71840SEH Electrical Specifications (12V) V+ = 12V, V- = -12V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. PARAMETER DESCRIPTION VS Analog Input Signal Range rON Channel ON-resistance ΔrON RFLAT(ON) TEST CONDITIONS MIN (Note 6) TYP V- MAX (Note 6) UNIT V+ V V± = ±10.8V, ±13.2V IOUT = -1mA, VIN = +5V, -5V - - 500 Ω V± = ±10.8V, ±13.2V IOUT = -1mA, VIN = V+, V- - - 700 Ω rON Match Between Channels VIN = +5V, -5V; IOUT = -1mA - 10 20 Ω ON-resistance Flatness VIN = +5V, -5V, V± = ±13.2V - - 25 Ω VIN = +5V, -5V, V± = ±10.8V TA = +25°C, -55°C, +125°C - - 30 Ω VIN = +5V, -5V, V± = ±10.8V, post radiation - - 40 Ω I+ Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V - - 350 µA I- Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V -350 - - µA I+ Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V - - 350 µA I- Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V -350 - - µA IREF Supply Current Into VREF VREF = 5.5V, VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V - - 35 µA tALH Transition Time Figures 4, 5 - 0.5 800 ns tAHL Transition Time Figures 4, 5 - 0.5 800 ns tBBM Break-before-make Delay Figures 8, 9 5 50 200 ns Post radiation - - 400 ns Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns DYNAMIC tENABLE tDISABLE Enable Turn-on Time Disable Turn-off Time VCTE Charge Injection CL = 100pF, VIN = 0V, (Figure 6) - 2 5 pC VISO Off Isolation VEN = 0V, RL = 1kΩ, f = 100kHz -90 - - dB VCT Crosstalk VEN = 4V, f = 100kHz, VP-P = 1V -90 - - dB CA Digital Input Capacitance f = 1MHz, V+ = V- = 0V - - 7 pF Input Capacitance f = 1MHz, V+ = V- = 0V - - 5 pF Output Capacitance f = 1MHz, V+ = V- = 0V - - 50 pF CIN(OFF) COUT(OFF) NOTE: 6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. Submit Document Feedback 8 FN8734.0 June 15, 2015 ISL71840SEH TABLE 2. TRUTH A3 A2 A1 A0 EN “ON” Channel X X X X 1 None 0 0 0 0 0 1 0 0 0 1 0 2 0 0 1 0 0 3 0 0 1 1 0 4 0 1 0 0 0 5 0 1 0 1 0 6 0 1 1 0 0 7 0 1 1 1 0 8 1 0 0 0 0 9 1 0 0 1 0 10 1 0 1 0 0 11 1 0 1 1 0 12 1 1 0 0 0 13 1 1 0 1 0 14 1 1 1 0 0 15 1 1 1 1 0 16 NOTE: 7. Don’t care, “1” = Logic High, “0” = Logic Low. Submit Document Feedback 9 FN8734.0 June 15, 2015 ISL71840SEH Block Diagram IN1 A0 1 OUT A1 A2 A3 IN16 16 EN ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS VSS FIGURE 3. BLOCK DIAGRAM Submit Document Feedback 10 FN8734.0 June 15, 2015 ISL71840SEH Timing Diagrams 4V I SL71840SEH +4.0V A3 A2 A1 A0 50Ω +0.8V +15V, 0V IN01 “11111” ADDRESS IN02-IN15 50% 50% 0V, +15V IN16 “00000” 0.8V 15V +0.8V EN tAHL VOUT OUT OUTPUT 50pF 10kΩ tALH 50% 50% 0V FIGURE 5. ADDRESS TIME TO OUTPUT DIAGRAM FIGURE 4. ADDRESS TIME TO OUTPUT TEST CIRCUIT I SL71840SEH A3 A2 A1 A0 4V IN01 +10V IN02-IN16 ENABLE 50% 50% 0.8V 10V EN +4.0V +0.8V OUT VOUT 1kΩ 50Ω 50pF tDISABLE tENABLE OUTPUT 50% 50% 0V FIGURE 7. TIME TO ENABLE/DISABLE OUTPUT DIAGRAM FIGURE 6. TIME TO ENABLE/DISABLE OUTPUT TEST CIRCUIT 4V I SL71840SEH +4.0V +0.8V A3 A2 A1 A0 50Ω IN01 +5V ADDRESS IN02-IN15 IN16 0.8V 5V +0.8V E N EN VOUT OUT 1kΩ 50pF 50% OUT 0V FIGURE 9. BREAK-BEFORE-MAKE DIAGRAM FIGURE 8. BREAK-BEFORE-MAKE TEST CIRCUIT 4V I SL71840SEH +4.0V +0.8V 50Ω A3 A2 A1 A0 IN01 tBBM 0V ADDRESS IN02-IN15 IN16 0.8V 15V +0.8V EN OUT Q = 100pF * ΔVOUT VOUT 100pF OUT ΔVOUT 0V FIGURE 10. CHARGE INJECTION TEST CIRCUIT Submit Document Feedback 11 FIGURE 11. CHARGE INJECTION DIAGRAM FN8734.0 June 15, 2015 ISL71840SEH Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. 600 600 500 500 +25°C +125°C 400 rDS(ON) (Ω) 400 rDS(ON) (Ω) +125°C 300 200 +25°C 300 200 100 100 -55°C 0 -20 -15 -55°C -10 -5 0 5 10 15 0 -20 20 -15 -10 SWITCH INPUT VOLTAGE (V) FIGURE 12. rDS(ON) vs VCM (V± = 14.5V) rDS(ON) (Ω) rDS(ON) (Ω) 15 20 +125°C 500 +125°C 300 200 +25°C 400 300 200 100 100 -55°C 0 -20 -15 -10 -5 0 5 10 15 -55°C 0 -15 20 -10 -5 0 5 10 15 10 15 SWITCH INPUT VOLTAGE (V) SWITCH INPUT VOLTAGE (V) FIGURE 14. rDS(ON) vs VCM (V± = 16.5V) FIGURE 15. rDS(ON) vs VCM (V± = 10.8V) 600 600 500 500 +125°C +25°C 400 rDS(ON) (Ω) rDS(ON) (Ω) 10 600 400 +25°C 300 +125°C +25°C 300 200 200 0 -15 5 700 500 100 0 FIGURE 13. rDS(ON) vs VCM (V± = 15.0V) 600 400 -5 SWITCH INPUT VOLTAGE (V) 100 -55°C -10 -5 0 5 SWITCH INPUT VOLTAGE (V) FIGURE 16. rDS(ON) vs VCM (V± = 12.0V) Submit Document Feedback 12 10 15 0 -15 -55°C -10 -5 0 5 SWITCH INPUT VOLTAGE (V) FIGURE 17. rDS(ON) vs VCM (V± = 13.2V) FN8734.0 June 15, 2015 ISL71840SEH Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued) 700 600 t ADDHL (ns) 500 +125°C 400 +25°C -55°C 300 200 100 0 tADDLH tADDHL 10 11 12 13 14 15 16 17 SPLIT SUPPLY RAILS (±V) FIGURE 18. TYPICAL ADDRESS TO OUTPUT DELAY (V± = ±15V, +25°C) FIGURE 19. ADDRESS TO OUTPUT DELAY (HIGH-TO-LOW) 300 t ADDLH (ns) 250 200 -55°C +125°C 150 +25°C 100 50 0 10 11 12 13 14 15 16 17 tDISABLE SPLIT SUPPLY RAILS (±V) FIGURE 20. ADDRESS TO OUTPUT DELAY (LOW-TO-HIGH) tENABLE FIGURE 21. TYPICAL ENABLE TO OUTPUT DELAY (V± = ±15V, +25°C) 400 600 350 500 300 t DISABLE (ns) t ENABLE (ns) 300 400 +125°C 200 +25°C -55°C 250 200 150 100 100 0 10 -55°C +25°C +125°C 50 11 12 13 14 15 16 SPLIT SUPPLY RAILS (±V) FIGURE 22. ENABLE TO OUTPUT DELAY (LOW-TO-HIGH) Submit Document Feedback 13 17 0 10 11 12 13 14 15 16 17 SPLIT SUPPLY RAILS (±V) FIGURE 23. DISABLE TO OUTPUT DELAY (LOW-TO-HIGH) FN8734.0 June 15, 2015 ISL71840SEH Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued) 120 100 +125°C tBBM (ns) 80 60 +25°C 40 -55°C 20 0 10 11 12 tBBM 14 15 16 17 SPLIT SUPPLY RAILS (±V) FIGURE 24. TYPICAL BREAK-BEFORE-MAKE DELAY (V± = 15V, +25°C) FIGURE 25. BREAK-BEFORE-MAKE DELAY 120 120 100 100 CROSSTALK (dB) OFF ISOLATION (dB) 13 80 60 40 20 80 60 40 20 0 10 100 1k 10k 100k FREQUENCY (Hz) FIGURE 26. OFF ISOLATION (V± = ±15V, +25°C) Submit Document Feedback 14 1M 0 10 100 1k 10k 100k 1M FREQUENCY (Hz) FIGURE 27. CROSSTALK (V± = ±15V, +25°C) FN8734.0 June 15, 2015 ISL71840SEH Post High Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 0 7 -1 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 6 BIASED 5 4 3 2 GROUNDED GROUNDED -2 -3 -4 BIASED -5 -6 1 0 0 20 40 60 80 100 120 140 -7 160 0 20 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 28. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION 60 80 100 120 140 160 FIGURE 29. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION 2 60 1 BIASED 50 BIASED 1 40 1 rDS(ON) (Ω) SUPPLY CURRENT (mA) 40 HIGH DOSE RATE RADIATION (krad(Si)) 1 GROUNDED 1 30 20 0 10 0 0 GROUNDED 0 20 40 60 80 100 120 140 0 160 0 20 HIGH DOSE RATE RADIATION (krad(Si)) 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 31. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION FIGURE 30. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION 25 20 18 20 16 BIASED BIASED rDS(ON) (Ω) rDS(ON) (Ω) 14 15 10 12 10 8 GROUNDED 6 5 4 GROUNDED 2 0 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 32. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION Submit Document Feedback 15 160 0 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 33. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post High Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 250 8 7 BIASED 200 BIASED 5 rDS(ON) (Ω) ADDRESS TIME (ns) 6 4 3 2 GROUNDED 1 150 GROUNDED 100 50 0 -1 -2 0 20 40 60 80 100 120 140 0 160 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 34. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION FIGURE 35. tADD SHIFT (LOW-TO-HIGH) vs HDR RADIATION 35 60 30 50 BIASED ADDRESS TIME (ns) ADDRESS TIME (ns) 25 20 15 10 5 GROUNDED BIASED 40 30 20 GROUNDED 0 10 -5 -10 0 20 40 60 80 100 120 140 0 0 160 20 HIGH DOSE RATE RADIATION (krad(Si)) 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 36. tADD SHIFT (HIGH-TO-LOW) vs HDR RADIATION FIGURE 37. tBBM SHIFT vs HDR RADIATION 50 200 180 BIASED 160 ADDRESS TIME (ns) ADDRESS TIME (ns) 40 30 20 GROUNDED 10 140 BIASED GROUNDED 120 100 80 60 40 0 20 -10 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 38. tENABLE SHIFT vs HDR RADIATION Submit Document Feedback 16 160 0 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 39. tDISABLE SHIFT vs HDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post High Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 0 7 -1 BIASED SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 6 5 4 3 2 GROUNDED -3 -4 BIASED -5 1 0 GROUNDED -2 -6 0 20 40 60 80 100 120 140 -7 0 160 20 HIGH DOSE RATE RADIATION (krad(Si)) 2 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 80 100 120 140 160 60 1 BIASED 1 1 1 GROUNDED 1 0 0 0 20 40 60 80 100 120 140 40 30 20 GROUNDED 10 0 160 BIASED 50 0 20 HIGH DOSE RATE RADIATION (krad(Si)) 30 25 25 BIASED rDS(ON) (Ω) 20 15 80 GROUNDED 5 0 20 40 60 80 100 120 140 FIGURE 44. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION 17 120 140 160 15 GROUNDED 5 HIGH DOSE RATE RADIATION (krad(Si)) Submit Document Feedback 100 BIASED 10 10 0 60 FIGURE 43. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION 30 20 40 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 42. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION rDS(ON) (Ω) 60 FIGURE 41. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION FIGURE 40. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION 0 40 HIGH DOSE RATE RADIATION (krad(Si)) 160 0 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 45. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post High Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 10 300 8 250 200 BIASED rDS(ON) (Ω) rDS(ON) (Ω) 6 4 2 GROUNDED 150 100 GROUNDED 0 -2 BIASED 0 20 40 60 80 100 50 120 140 0 160 0 20 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 46. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION 60 35 ADDRESS TIME (ns) rDS(ON) (Ω) BIASED 50 BIASED 30 25 20 15 GROUNDED 10 40 30 GROUNDED 20 10 5 0 20 40 60 80 100 120 140 0 160 0 20 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 48. tADD SHIFT (HIGH-TO-LOW) vs HDR RADIATION 160 200 180 BIASED 45 BIASED 160 ADDRESS TIME (ns) 40 ADDRESS TIME (ns) 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 49. tBBM SHIFT vs HDR RADIATION 50 35 30 25 20 15 GROUNDED 10 140 GROUNDED 120 100 80 60 40 5 0 160 FIGURE 47. tADD SHIFT (LOW-TO-HIGH) vs HDR RADIATION 40 0 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) 20 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 50. tENABLE SHIFT vs HDR RADIATION Submit Document Feedback 18 160 0 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) 160 FIGURE 51. tDISABLE SHIFT vs HDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post Low Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 0 1.2 -0.2 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 1.0 GROUNDED 0.8 0.6 0.4 BIASED 0.2 0 -0.4 BIASED -0.6 -0.8 GROUNDED -1.0 -1.2 0 10 20 30 40 50 -1.4 60 0 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) LOW DOSE RATE RADIATION (krad(Si)) FIGURE 52. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 53. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION 10 2.5 8 GROUNDED 2.0 BIASED 6 rDS(ON) (Ω) SUPPLY CURRENT (mA) 10 1.5 BIASED 1.0 4 2 GROUNDED 0 0.5 0.0 -2 0 10 20 30 40 50 -4 60 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) LOW DOSE RATE RADIATION (krad(Si)) FIGURE 54. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 55. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION 6 25 5 20 BIASED 4 1 GROUNDED 0 10 5 -1 -2 0 -3 -4 BIASED 15 2 rDS(ON) (Ω) rDS(ON) (Ω) 3 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 56. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION Submit Document Feedback 19 60 -5 GROUNDED 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 57. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post Low Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 0 250 BIASED -1 -2 rDS(ON) (Ω) ADDRESS TIME (ns) 200 GROUNDED -3 -4 -5 -6 -7 BIASED -8 GROUNDED 150 100 50 -9 -10 0 10 20 30 40 50 0 60 0 LOW DOSE RATE RADIATION (krad(Si)) 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 58. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION FIGURE 59. tADD SHIFT (LOW-TO-HIGH) vs LDR RADIATION 0 14 GROUNDED -10 12 -30 ADDRESS TIME (ns) ADDRESS TIME (ns) -20 BIASED -40 -50 -60 -70 -80 GROUNDED 8 BIASED 6 4 2 -90 -100 0 10 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 0 60 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 60. tADD SHIFT (HIGH-TO-LOW) vs LDR RADIATION FIGURE 61. tBBM SHIFT vs LDR RADIATION 20 300 15 250 BIASED ADDRESS TIME (ns) ADDRESS TIME (ns) BIASED 10 5 0 GROUNDED -5 -10 0 10 20 30 40 50 FIGURE 62. tENABLE SHIFT vs LDR RADIATION 20 GROUNDED 150 100 50 LOW DOSE RATE RADIATION (krad(Si)) Submit Document Feedback 200 60 0 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 63. tDISABLE SHIFT vs LDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post Low Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0,VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 0 1.2 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) -0.2 GROUNDED 1.0 0.8 0.6 BIASED 0.4 0.2 0.0 -0.6 -0.8 -1.0 GROUNDED -1.2 0 10 20 30 40 50 -1.4 0 60 10 20 30 FIGURE 64. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION 30 GROUNDED rDS(ON) (Ω) 25 1.5 BIASED 1.0 BIASED 20 15 10 5 0.5 GROUNDED 0 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) -5 60 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 67. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION FIGURE 66. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION 8 12 10 6 GROUNDED BIASED 8 4 6 rDS(ON) (Ω) rDS(ON) (Ω) 60 35 2.0 4 2 GROUNDED 0 2 BIASED 0 -2 -2 -4 50 FIGURE 65. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION 2.5 0 40 LOW DOSE RATE RADIATION (krad(Si)) LOW DOSE RATE RADIATION (krad(Si)) SUPPLY CURRENT (mA) BIASED -0.4 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 68. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION Submit Document Feedback 21 60 -4 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 69. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Post Low Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0,VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 350 0 300 ADDRESS TIME (ns) 2 rDS(ON) (Ω) -2 GROUNDED -4 -6 -8 BIASED -10 -12 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 150 100 16 15 14 BIASED 5 0 -5 GROUNDED -15 -20 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 71. tADD SHIFT (LOW-TO-HIGH) vs LDR RADIATION 20 -10 GROUNDED 200 0 60 ADDRESS TIME (ns) ADDRESS TIME (ns) 250 50 FIGURE 70. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION 10 BIASED GROUNDED 12 10 8 BIASED 6 4 2 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 0 60 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 72. tADD SHIFT (HIGH-TO-LOW) vs LDR RADIATION FIGURE 73. tBBM SHIFT vs LDR RADIATION 25 300 20 250 BIASED ADDRESS TIME (ns) ADDRESS TIME (ns) BIASED 15 10 5 GROUNDED 0 150 100 50 -5 -10 GROUNDED 200 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 74. tENABLE SHIFT vs LDR RADIATION Submit Document Feedback 22 60 0 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 75. tDISABLE SHIFT vs LDR RADIATION FN8734.0 June 15, 2015 ISL71840SEH Applications Information ISL71840SEH vs ISL71841SEH Power-up Considerations There is a 32-Channel version of the ISL71840SEH available in a 48 Ld CQFP. In terms of performance specs, the parts are very similar in behavior. Apart from the apparent increase in channel density, the ISL71841SEH does have slightly higher output leakage compared to the ISL71840SEH due to having more channels connected to the output. The supply current for the ISL71841SEH is also a bit higher compared to the ISL71840SEH. (See Table 1 on page 3). The circuit is designed to be insensitive to any given power-up sequence between V+, V- and VREF, however, it is recommended that all supplies power up relatively close to each other. Overvoltage Protection The ISL71840SEH has overvoltage protection on both the input as well as the output. On the output, the voltage is limited to a diode past the rails. Each of the inputs has independent overvoltage protection that works regardless of the switch being selected. If a switch experiences an overvoltage condition (3V to 4V) past the rail), the switch is turned off. As soon as the voltage returns within the rails, the switch returns to normal operation. VREF and Logic Functionality The VREF pin sets the logic threshold for the ISL71840SEH. The range for VREF is between 4.5V and 5.5V with a nominal voltage of 5V. The address pins and enable are compared against roughly 30% of VREF voltage (refer to Figure 76). With 5.0V on VREF, the switching point is set to around 1.4V. This switching point allows for both 5V and 3.3V logic control. ISL71840SEH A/EN 400kΩ VREF TO DECODER 200kΩ FIGURE 76. SIMPLIFIED VREF CIRCUITRY Submit Document Feedback 23 FN8734.0 June 15, 2015 ISL71840SEH Die Characteristics Assembly Related Information Die Dimensions SUBSTRATE POTENTIAL Floating 2820µm x 4080µm (111mils x 161mils) Thickness: 483µm ± 25µm (19mils ± 1 mil) Additional Information Interface Materials WORST CASE CURRENT DENSITY GLASSIVATION 1.6 x 105 A/cm2 Type: 12kÅ Silicon Nitride on 3kÅ Oxide TRANSISTOR COUNT TOP METALLIZATION 5682 Type: 300kÅ Tin on 2.8µm AlCu In Bondpads, Tin has been removed. Weight of Packaged Device 2.096 grams BACKSIDE FINISH Lid Characteristics Silicon Finish: Gold Potential: Grounded, tied to package pin 12 PROCESS P6SOI Metalization Mask Layout IN16 VDD IN7 IN14 IN6 IN13 IN5 IN12 IN4 IN11 IN3 IN10 IN2 IN9 IN1 A4 24 IN8 VSS IN15 GND Submit Document Feedback OUT A3 A2 A1 A0 EN BAR FN8734.0 June 15, 2015 ISL71840SEH TABLE 3. ISL71840SEH DIE LAYOUT X-Y COORDINATES PAD NUMBER PAD NAME PACKAGING PIN X (µm) Y (µm) X Y 1 S8 P26 127 127 979.5 1768.5 3 VSS P27 125 125 417.5 1754.5 4 OUT P28 125 125 -79.5 1774.5 5 VDD P1 125 125 -474.5 1756.5 7 S16 P4 127 127 -947.5 1752.5 10 S15 P5 127 127 -1133.5 1310.5 11 S14 P6 127 127 -1133.5 868.5 12 S13 P7 127 127 -1133.5 426.5 13 S12 P8 127 127 -1133.5 -15.5 14 S11 P9 127 127 -1133.5 -457.5 15 S10 P10 127 127 -1133.5 -899.5 16 S9 P11 127 127 -1133.5 -1341.5 17 GND P12 250 125 -1147 -1839.5 18 VREF P13 127 127 -781.5 -1763.5 19 A3 P14 127 127 -451.5 -1763.5 20 A2 P15 127 127 -121.5 -1763.5 21 A1 P16 127 127 208.5 -1763.5 22 A0 P17 127 127 538.5 -1763.5 23 EN_B P18 127 127 868.5 -1763.5 25 S1 P19 127 127 1133.5 -1341.5 26 S2 P20 127 127 1133.5 -899.5 27 S3 P21 127 127 1133.5 -457.5 28 S4 P22 127 127 1133.5 -15.5 29 S5 P23 127 127 1133.5 426.5 30 S6 P24 127 127 1133.5 868.5 31 S7 P25 127 127 1133.5 1310.5 NOTE: Origin of coordinates is the center of the die. Submit Document Feedback 25 FN8734.0 June 15, 2015 ISL71840SEH Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION June 15, 2015 FN8734.0 CHANGE Initial Release About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 26 FN8734.0 June 15, 2015 ISL71840SEH Ceramic Metal Seal Flatpack Packages (Flatpack) K28.A MIL-STD-1835 CDFP3-F28 (F-11A, CONFIGURATION B) A e 28 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE A INCHES PIN NO. 1 ID AREA -A- D -B- S1 b E1 0.004 M H A-B S D S Q 0.036 M H A-B S D S C E -D- A -C- -HL E2 E3 SEATING AND BASE PLANE c1 L E3 BASE METAL (c) b1 M SYMBOL MIN MAX MIN MAX NOTES A 0.045 0.115 1.14 2.92 - b 0.015 0.022 0.38 0.56 - b1 0.015 0.019 0.38 0.48 - c 0.004 0.009 0.10 0.23 - c1 0.004 0.006 0.10 0.15 - D - 0.740 E 0.460 0.520 E1 - 0.550 - E2 0.180 - 4.57 - - E3 0.030 - 0.76 - 7 e LEAD FINISH M (b) SECTION A-A MILLIMETERS 11.68 0.050 BSC 18.80 3 13.21 - 13.97 3 1.27 BSC - k 0.008 0.015 0.20 0.38 2 L 0.250 0.370 6.35 9.40 - Q 0.026 0.045 0.66 1.14 8 S1 0.00 - 0.00 - 6 M - 0.0015 - N 28 0.04 28 - Rev. 0 5/18/94 NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab (dimension k) may be used to identify pin one. 2. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply. 3. This dimension allows for off-center lid, meniscus and glass overrun. 4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 5. N is the maximum number of terminal positions. 6. Measure dimension S1 at all four corners. 7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension Q minimum shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH. Submit Document Feedback 27 FN8734.0 June 15, 2015