Test Report 010 Total Dose Testing of the ISL71840SEH 16-channel Analog Multiplexer Introduction This document provides interim results of a low and high dose rate total dose test of the ISL71840SEH 16-channel analog multiplexer. The test was conducted in order to determine the sensitivity of the part to the total dose environment and to determine if any dose rate sensitivity exists. High dose rate testing under bias is complete through 150krad(Si) and the subsequent high temperature biased anneal while low dose rate testing under bias and with all pins grounded is at the intermediate 100krad(Si) downpoint. Reference Documents • MIL-STD-883 test method 1019 • ISL71840SEH datasheet. • Standard Microcircuit Drawing (SMD) 5962-15219 Part Description The ISL71840SEH is a radiation hardened 16-channel analog multiplexer that is fabricated using Intersil’s proprietary P6SOI (Silicon on Insulator) process to mitigate single-event effects and improve total ionizing dose performance. The part operates from a dual supply voltage ranging from ±10.8V to ±16.5V and has four address inputs and an ENABLE pin that can be driven with adjustable logic thresholds to select 1 of 16 available channels. An inactive channel is separated from an active channel by high impedance, which inhibits any interaction between them. The ISL71840SEH’s low switch ON-resistance (rON) allows improved signal integrity and reduced power losses. The ISL71840SEH is also designed for cold sparing making it suitable for high reliability applications that have redundancy requirements. The part is designed to provide a high impedance to the analog source while in a powered OFF condition, making it easy to add additional backup devices without loading signal sources. The ISL71840SEH also incorporates input analog overvoltage protection up to ±35V, which will disable the switch to protect downstream devices. All inputs are Electrostatic Discharge (ESD) protected to 8kV Human Body Model (HBM). The ISL71840SEH is available in a 28 Ld flatpack or in die form and operates across the extended temperature range of -55°C to +125°C. June 30, 2015 TR010.0 1 As the ISL71840SEH is the third version of the part, a brief historical note may be in order. The first Intersil 16-channel multiplexer was the HS-1840RH. This part was built in an early dielectrically isolated metal gate CMOS process. The key to hardening a metal gate process at the time was the gate metal deposition, which must be performed using a flash evaporator. In the 1995 time frame this by then obsolete equipment became difficult to maintain and the metal gate process could no longer be supported. As a result the HS-1840RH was obsoleted. The HS-1840RH was followed by the HS-1840ARH, which was designed in the later RSG process and was developed in order to continue supplying this very popular part, which performs a key function in many space systems. As part of the redesign the HS-1840ARH gained some functionality made possible by the bipolar devices available in RSG, which the metal gate process did not support. Bipolar circuit blocks in the HS-1840ARH included the on-chip voltage reference, the digital input ESD network and the VDD and VSS ESD nets. The ISL71840SEH is the subject of the present report and was designed as an updated version of the HS-1840ARH, with improvements in the switch ON-resistance and in cold sparing capabilities. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Test Report 010 VDD IN1 A0 1 OUT A1 A2 A3 IN16 16 EN ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS VSS MULTIPLEX SWITCHES FIGURE 1. ISL71840SEH BLOCK DIAGRAM Test Description Irradiation Facilities High dose rate testing was performed using a Gamma cell 220 60Co irradiator located in the Palm Bay, Florida Intersil facility. Low dose rate testing was performed using a Hopewell Designs N40 panoramic low dose rate 60Co irradiator located in the same facility. The high dose rate irradiations were performed at 69.72rad(Si)/s and the low dose rate work was performed at 0.0089rad(Si)/s (8.9mrad(Si)/s), both in accordance with MIL-STD-883 Method 1019. The low dose rate exposures used a PbAl box to shield the test board and devices under test against low energy secondary gamma radiation. Test Fixturing Figure 2 on page 3 shows the configuration and power supply sequencing used for biased irradiation. Submit Document Feedback 2 TR010.0 June 30, 2015 Test Report 010 233032-005-664 ISL71840 (HDR/LDR) Mask # 54252A01 V1 R1 1 (Vdd) 2 N/C 3 N/C (Out) 28 (Vss) 27 (S8) 26 (S7) 25 (S6) 24 (S5) 23 (S4) 22 (S3) 21 (S2) 20 (S1) 19 (EnB) 18 (A0) 17 (A1) 16 (A2) 15 4 (S16) 5 (S15) 6 (S14) 7 (S13) 8 (S12) 9 (S11) 10 (S10) 11 (S9) 12 (Gnd) 13 (VRef) 14 (A3) GND 1.) 2.) 3.) 4.) 5.) 6.) 7.) GND V2 V3 V1 = +16.5v, +/- 0.1v V2 = -16.5v, +/-0.1v V3 = +5.5v, +/-0.1v R1 = 1kOhm, +/-5%, ¼ Watt (Per socket) Socket is 28 pin flatpack (Sensata 628-0282315) Power up sequence is V1, V2, V3. Reverse order for power down(V3, V2, V1). FIGURE 2. IRRADIATION BIAS CONFIGURATION AND POWER SUPPLY SEQUENCING FOR THE ISL71840SEH Characterization Equipment and Procedures All electrical testing was performed outside the irradiator using production Automated Test Equipment (ATE) with data logging of all parameters at each downpoint. Downpoint electrical testing was performed at room temperature. Experimental Matrix Testing proceeded in accordance with the guidelines of MIL-STD-883 Test Method 1019. The experimental matrix consisted of four samples irradiated at high dose rate under bias, four samples irradiated at low dose rate with all pins grounded and four samples irradiated at low dose rate under bias, (three control units were used). Samples of the ISL71840SEH were drawn from development lot J67669 (wafers 1 and 2) as part of the routine wafer-by-wafer acceptance testing procedure and were packaged in the production hermetic 28-pin ceramic flatpack package outline K28.A. The samples were processed through the standard burn in cycle and were screened to the SMD 5962-15219 limits at room, low and high temperatures before irradiation. samples were subjected to a high temperature biased anneal for 168 hours at 100°C following irradiation. The low dose rate samples will be continued to 150krad(Si) and will then be subjected to the same anneal. Results Attributes Data Testing at high dose rate under bias of the ISL71840SEH is complete and showed no reject devices after irradiation to 150krad(Si) or after the post-150krad(Si) irradiation anneal. Testing at low dose rate under bias and grounded is complete through 100krad(Si) and showed no reject devices after irradiation to that level. Table 1 on page 4 summarizes the results. Downpoints Downpoints to date for the low dose rate tests were zero, 10krad(Si), 30krad(Si), 50krad(Si), 75krad(Si) and 100krad(Si). Downpoints for the high dose rate test were zero, 30krad(Si), 50krad(Si), 100krad(Si) and 150krad(Si). The high dose rate Submit Document Feedback 3 TR010.0 June 30, 2015 Test Report 010 TABLE 1. ISL71840SEH TOTAL DOSE TEST ATTRIBUTES DATA DOSE RATE BIAS SAMPLE SIZE 0.0089rad(Si)/s Figure 2 4 0.0089rad(Si)/s 69.72rad(Si)/s Grounded Figure 2 4 4 DOWNPOINT BIN 1 REJECTS Preirradiation 4 10krad(Si) 4 0 30krad(Si) 4 0 50krad(Si) 4 0 75krad(Si) 4 0 100krad(Si) 4 0 150krad(Si) Test in progress Test in progress Anneal, 168 hours at 100°C Test in progress Test in progress Preirradiation 4 10krad(Si) 4 0 30krad(Si) 4 0 50krad(Si) 4 0 75krad(Si) 4 0 100krad(Si) 4 0 150krad(Si) Test in progress Test in progress Anneal, 168 hours at 100°C Test in progress Test in progress Preirradiation 4 30krad(Si) 4 0 50krad(Si) 4 0 100krad(Si) 4 0 150krad(Si) 4 0 Anneal, 168 hours at 100°C 4 0 NOTES: 1. Bin 1 indicates a device that passes all preirradiation specification limits. 2. The 168 hours anneal was performed at 100°C using the bias configuration shown in Figure 2. Submit Document Feedback 4 TR010.0 June 30, 2015 Test Report 010 Variables Data interpretation of the results as well as managing the length of this report. All samples showed excellent stability over irradiation, with no observed dose rate sensitivity. See the conclusion on page 25 for further discussion. The plots in Figures 3 through 41 show data at all downpoints to date. The plots show the median of key parameters as a function of total dose for each of the four irradiation conditions. Many of the plots show the total dose response of the average of parameters such as ON resistance and the various leakage parameters for each of the 16 channels in order to facilitate the Variables Data Plots 400 SPEC LIMIT POSITIVE SUPPLY CURRENT (µA) 350 300 250 LDR BIASED LDR GND HDR BIASED 200 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 3. ISL71840SEH positive supply current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 350µA maximum. Submit Document Feedback 5 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) NEGATIVE SUPPLY CURRENT (µA) -200 -250 -300 SPEC LIMIT -350 LDR BIASED LDR GND -400 0 50 100 150 ANNEAL HDR BIASED TOTAL DOSE (krad(Si)) FIGURE 4. ISL71840SEH negative supply current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is -350µA minimum. NEGATIVE SUPPLY CURRENT (µA) 400 SPEC LIMIT 350 300 250 LDR BIASED LDR GND HDR BIASED 200 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 5. ISL71840SEH positive standby current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 350µA maximum. Submit Document Feedback 6 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) NEGATIVE SUPPLY CURRENT (µA) -200 -250 -300 SPEC LIMIT -350 LDR BIASED LDR GND HDR BIASED -400 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 6. ISL71840SEH negative standby current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is -350µA minimum. 40 SPEC LIMIT REFERENCE CURRENT (µA) 35 30 25 LDR BIASED LDR GND HDR BIASED 20 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 7. ISL71840SEH reference current as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 35µA maximum. Submit Document Feedback 7 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 800 SPEC LIMIT ON-RESISTANCE (Ω) 700 600 500 400 LDR BIASED 300 LDR GND HDR BIASED 200 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 8. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1.0mA output current, 5V input voltage, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 700Ω maximum. 800 SPEC LIMIT ON-RESISTANCE (Ω) 700 600 500 400 LDR BIASED 300 LDR GND HDR BIASED 200 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 9. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1mA output current, -5V input voltage, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 700Ω maximum. Submit Document Feedback 8 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 600 550 SPEC LIMIT 500 ON-RESISTANCE (Ω) 450 400 350 300 250 LDR BIASED 200 LDR GND 150 100 HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 10. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1mA output current, 15V input voltage, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 500Ω maximum. 600 550 SPEC LIMIT 500 ON-RESISTANCE (Ω) 450 400 350 300 250 LDR BIASED 200 LDR GND 150 HDR BIASED 100 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 11. ISL71840SEH ON-resistance, average of all 16 channels, ±15V supplies, 1mA output current, -15V input voltage, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 500Ω maximum. Submit Document Feedback 9 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 25 SPEC LIMIT ON-RESISTANCE (Ω) 20 15 10 LDR BIASED 5 LDR GND HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 12. ISL71840SEH ON-resistance match, average of all 16 channels, ±15V supplies, -1mA output current, +5V input voltage, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 20Ω maximum. 25 SPEC LIMIT ON-RESISTANCE (Ω) 20 15 10 LDR BIASED 5 LDR GND HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 13. ISL71840SEH ON-resistance match, average of all 16 channels, ±15V supplies, -1mA output current, -5V input voltage, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 20Ω maximum. Submit Document Feedback 10 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 150 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 100 50 0 -50 SPEC LIMIT LDR BIASED -100 LDR GND HDR BIASED -150 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 14. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V, input voltage +11.5V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to 100nA. 150 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 100 50 0 -50 LDR BIASED SPEC LIMIT LDR GND -100 HDR BIASED -150 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 15. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V, input voltage -11.5V as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to 100nA. Submit Document Feedback 11 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 1000 800 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 600 400 200 0 -200 -400 LDR BIASED -600 LDR GND SPEC LIMIT HDR BIASED -800 -1000 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 16. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V, input overvoltage +35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -750nA to +750nA. 1000 SPEC LIMIT 800 SWITCH OFF LEAKAGE (nA) 600 400 200 0 -200 -400 LDR BIASED -600 SPEC LIMIT LDR GND -800 -1000 HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 17. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, supply voltage ±15V, input overvoltage -35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -750nA to +750nA. Submit Document Feedback 12 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 600 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 400 200 0 -200 LDR BIASED LDR GND -400 SPEC LIMIT HDR BIASED -600 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 18. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain of an unselected channel, supply voltage ±15V, input overvoltage +35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA. 600 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 400 200 0 -200 LDR BIASED -400 SPEC LIMIT LDR GND HDR BIASED -600 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 19. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain of an unselected channel, supply voltage ±15V, input overvoltage -35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA. Submit Document Feedback 13 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 600 SPEC LIMIT SWITCH ON LEAKAGE (nA) 400 200 0 -200 LDR BIASED -400 SPEC LIMIT LDR GND HDR BIASED -600 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 20. ISL71840SEH switch ON leakage (IS(ON)) into the source of a selected channel, average of all 16 channels, supply voltage ±15V, input overvoltage +35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA. 600 SPEC LIMIT SWITCH ON LEAKAGE (nA) 400 200 0 -200 LDR BIASED LDR GND -400 SPEC LIMIT HDR BIASED -600 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 21. ISL71840SEH switch ON leakage (IS(ON)) into the source of a selected channel, average of all 16 channels, supply voltage ±15V, input overvoltage -35V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -500nA to +500nA. Submit Document Feedback 14 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 150 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 100 50 0 -50 LDR BIASED SPEC LIMIT LDR GND -100 HDR BIASED -150 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 22. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, with supply, address and ENABLE pins open, input voltage +25V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to +100nA. 150 SPEC LIMIT SWITCH OFF LEAKAGE (nA) 100 50 0 -50 SPEC LIMIT LDR BIASED -100 LDR GND HDR BIASED -150 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 23. ISL71840SEH switch OFF leakage (IS(OFF)) into the source of an unselected channel, average of all 16 channels, with supply, address and ENABLE pins open, input voltage -25V as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to +100nA. Submit Document Feedback 15 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 150 SPEC LIMIT SWITCH ON LEAKAGE (nA) 100 50 0 -50 SPEC LIMIT LDR BIASED -100 LDR GND HDR BIASED -150 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 24. ISL71840SEH switch ON leakage (ID(ON)) into the source and drain of a selected channel, average of all 16 channels, supply voltage ±15V, input and output voltage 10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to +100nA. 150 SPEC LIMIT SWITCH ON LEAKAGE (nA) 100 50 0 -50 SPEC LIMIT LDR BIASED -100 LDR GND HDR BIASED -150 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 25. ISL71840SEH switch ON leakage (ID(ON)) into the source and drain of a selected channel, average of all 16 channels, supply voltage ±15V, input and output voltage -10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to +100nA. Submit Document Feedback 16 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 100 SPEC LIMIT 80 SWITCH OFF LEAKAGE (nA) 60 40 20 0 -20 -40 LDR BIASED -60 SPEC LIMIT LDR GND -80 -100 HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 26. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain with the part disabled, supply voltage ±15V, output voltage +10V, input voltage -10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -80nA to +80nA. 100 SPEC LIMIT 80 SWITCH OFF LEAKAGE (nA) 60 40 20 0 -20 -40 -60 LDR BIASED SPEC LIMIT -80 -100 LDR GND HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 27. ISL71840SEH switch OFF leakage (ID(OFF)) into the drain with the part disabled, supply voltage ±15V, output voltage -10V, input voltage +10V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -80nA to +80nA. Submit Document Feedback 17 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 900 SPEC LIMIT 800 700 tALH (ns) 600 500 400 300 200 LDR BIASED LDR GND 100 HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 28. ISL71840SEH address to output access time, LOW-to-HIGH, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. 900 SPEC LIMIT 800 700 tALH (ns) 600 500 400 300 200 LDR BIASED LDR GND 100 HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 29. ISL71840SEH address to output access time, HIGH-to-LOW, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. Submit Document Feedback 18 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 450 SPEC LIMIT 400 350 tBBM (ns) 300 250 200 150 LDR BIASED 100 LDR GND 50 HDR BIASED SPEC LIMIT 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 30. ISL71840SEH break-before-make time delay, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are 5ns to 400ns. 900 SPEC LIMIT 800 700 tON(EN) (ns) 600 500 400 300 200 LDR BIASED LDR GND 100 HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 31. ISL71840SEH enable to output ON delay, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum Submit Document Feedback 19 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 900 SPEC LIMIT 800 700 tOFF(EN) (ns) 600 500 400 300 200 LDR BIASED 100 LDR GND HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 32. ISL71840SEH enable to output OFF delay, supply voltage ±15V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. 900 SPEC LIMIT 800 700 tALH (ns) 600 500 400 300 200 LDR BIASED 100 LDR GND HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 33. ISL71840SEH address to output access time, LOW-to-HIGH, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. Submit Document Feedback 20 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 900 SPEC LIMIT 800 700 tALH (ns) 600 500 400 300 200 LDR BIASED LDR GND 100 HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 34. ISL71840SEH address to output access time, HIGH-to-LOW, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. 450 SPEC LIMIT 400 350 tBBM (ns) 300 250 200 150 100 LDR BIASED 50 LDR GND SPEC LIMIT 0 0 50 HDR BIASED 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 35. ISL71840SEH break-before-make time delay, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The post-irradiation SMD limits are 5ns to 400ns. Submit Document Feedback 21 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 900 SPEC LIMIT 800 700 tON(EN) (ns) 600 500 400 300 200 LDR BIASED 100 0 LDR GND HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 36. ISL71840SEH enable to output ON delay, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. 900 SPEC LIMIT 800 700 tOFF(EN) (ns) 600 500 400 300 200 LDR BIASED LDR GND 100 HDR BIASED 0 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 37. ISL71840SEH enable to output OFF delay, supply voltage ±12V, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limit is 800ns maximum. Submit Document Feedback 22 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 150 SPEC LIMIT INPUT HIGH CURRENT (nA) 100 50 0 -50 SPEC LIMIT -100 LDR BIASED LDR GND -150 0 50 100 150 ANNEAL HDR BIASED TOTAL DOSE (krad(Si)) FIGURE 38. ISL71840SEH input HIGH current, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to 100nA. 150 SPEC LIMIT INPUT LOW CURRENT (nA) 100 50 0 -50 SPEC LIMIT LDR BIASED -100 LDR GND -150 HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 39. ISL71840SEH input LOW current, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are -100nA to 100nA. Submit Document Feedback 23 TR010.0 June 30, 2015 Test Report 010 Variables Data Plots (Continued) 1.8 1.7 SPEC LIMIT INPUT LOW VOLTAGE (V) 1.6 1.5 1.4 1.3 SPEC LIMIT 1.2 LDR BIASED 1.1 LDR GND 1.0 0 50 100 150 ANNEAL HDR BIASED TOTAL DOSE (krad(Si)) FIGURE 40. ISL71840SEH input LOW voltage, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are 1.2V to 1.6V. 1.8 1.7 SPEC LIMIT INPUT HIGH VOLTAGE (V) 1.6 1.5 1.4 1.3 SPEC LIMIT 1.2 LDR BIASED 1.1 1.0 LDR GND HDR BIASED 0 50 100 150 ANNEAL TOTAL DOSE (krad(Si)) FIGURE 41. ISL71840SEH input HIGH voltage, average of four addresses and ENABLE, as a function of total dose irradiation at high dose rate for the biased (per Figure 2) case and at low dose rate for the unbiased (all pins grounded) and the biased (per Figure 2) cases. The low dose rate was 0.0089rad(Si)/s and the high dose rate was 69.72rad(Si)/s. Sample size for each of the three cells was 4. The postirradiation SMD limits are 1.2V to 1.6V. Submit Document Feedback 24 TR010.0 June 30, 2015 Test Report 010 Conclusion This document reports interim results of a total dose test of the ISL71840SEH 16-channel analog multiplexer. Parts were tested at low dose rate underbiased and unbiased conditions and at high dose rate underbiased conditions as outlined in MIL-STD-883 Test Method 1019.7. The high dose rate samples were taken through 150krad(Si) and biased anneal; the low dose rate samples are at 100krad(Si) at this time and will be continued through 150krad(Si) and anneal. ATE characterization testing at downpoints showed no rejects to the SMD Group A limits for biased irradiation at high dose rate and biased and grounded irradiation at low dose rate, with the high dose rate irradiations followed by a 100 hours biased anneal for 168 hours. The attributes data is presented in Table 1, while the variables data for selected parameters is presented in Figures 3 through 41. As a determinant of low dose rate sensitivity, MIL-STD-883 Test Method 1019.7 specifies that a delta_parameter calculation be performed for any parameters that exceed the Group A limits. These calculations were not required as there were no rejects against the Group A limits. Accordingly, the part is considered ELDRS insensitive up to 150krad(Si). Similarly, no differences between biased and unbiased irradiation were noted, and the part is not considered bias sensitive. TABLE 2. REPORTED PARAMETER FIGURE PARAMETER LIMIT LOW LIMIT HIGH UNIT NOTES 3 Positive Supply Current - 350 µA 4 Negative Supply Current -350 - µA 5 Positive Standby Supply Current - 350 µA 6 Negative Standby Supply Current -350 - µA 7 Supply Current Into VREF - 35 µA 8 Switch ON-resistance, Average - 500 Ω VIN = 5V 9 Switch ON-resistance, Average - 500 Ω VIN = -5V 10 Switch ON-resistance, Average - 700 Ω VIN= 15V 11 Switch ON-resistance, Average - 700 Ω VIN = -15V 12 ON-resistance match, Average - 20 Ω VIN = 5V 13 ON-resistance Match, Average - 20 Ω VIN = -5V 14 OFF Source Leakage, Average -100 100 nA VIN = 11.5V 15 OFF Source Leakage, Average -100 100 nA VIN = -11.5V 16 OFF Source Leakage, Average -750 750 nA 35V overvoltage 17 OFF Source Leakage, Average -750 750 nA -35V overvoltage 18 OFF Drain Leakage, Average -500 500 nA Power off, 35V overvoltage 19 OFF Drain Leakage, Average -500 500 nA Power off, -35V overvoltage 20 ON Source Leakage, Average -500 500 nA 35V overvoltage 21 ON Source Leakage, Average -500 500 nA -35V overvoltage 22 OFF Source Leakage, Average -100 100 nA Power off 23 OFF Source Leakage, Average -100 100 nA Power off 24 ON Drain Leakage, Average -100 100 nA Source and drain at 10V 25 ON Drain Leakage, Average -100 100 nA Source and drain at -10V 26 ON Source Leakage -80 80 nA Part disabled 27 ON Source Leakage -80 80 nA Part disabled 28 Access Time, LOW-to-HIGH - 800 ns ±15V supplies 29 Access Time, HIGH-to-LOW - 800 ns ±15V supplies 30 Break-before-make Time 5 400 ns ±15V supplies Submit Document Feedback 25 TR010.0 June 30, 2015 Test Report 010 TABLE 2. REPORTED PARAMETER (Continued) FIGURE PARAMETER LIMIT LOW LIMIT HIGH UNIT NOTES 31 Enable ON to Output Delay - 800 ns ±15V supplies 32 Enable OFF to Output Delay - 800 ns ±15V supplies 33 Access time, LOW-to-HIGH - 800 ns ±12V supplies 34 Access time, HIGH-to-LOW - 800 ns ±12V supplies 35 Break-before-make Time 5 400 ns ±12V supplies 36 Enable ON to Output Delay - 800 ns ±12V supplies 37 Enable OFF to Output Delay - 800 ns ±12V supplies 38 Input HIGH Current, Average -100 100 nA A0–A3 and ENABLE 39 Input LOW Current, Average -100 100 nA A0–A3 and ENABLE 40 Input LOW Voltage, Average 1.2 1.6 V A0–A3 and ENABLE 41 Input HIGH Voltage, Average 1.2 1.6 V A0–A3 and ENABLE NOTE: 3. Limits are taken from Standard Microcircuit Drawing (SMD) 5962-15219. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the document is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 26 TR010.0 June 30, 2015