WESTCODE Date:- 11 Oct, 2001 Data Sheet Issue:- 1 Distributed Gate Thyristor Type R2714ZC16x to R2714ZC18x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS 1600-1800 V VDRM Repetitive peak off-state voltage, (note 1) VDSM Non-repetitive peak off-state voltage, (note 1) 1600-1800 V VRRM Repetitive peak reverse voltage, (note 1) 1600-1800 V VRSM Non-repetitive peak reverse voltage, (note 1) 1700-1900 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV) Mean on-state current, Tsink=55°C, (note 2) 2714 A IT(AV) Mean on-state current. Tsink=85°C, (note 2) 1828 A IT(AV) Mean on-state current. Tsink=85°C, (note 3) 1078 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 5411 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 4561 A ITSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 35600 A ITSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 39000 2 I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) 2 I t capacity for fusing tp=10ms, VRM≤10V, (note 5) It It diT/dt 2 2 A 6.34×10 6 As 2 7.61×10 6 As 2 Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 5 W PGM Peak forward gate power 30 W VGD Non-trigger gate voltage, (Note 7) 0.25 V THS Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. 7) Rated VDRM. Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 1 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 1.9 ITM=4000A V V0 Threshold voltage - - 1.25 V rS Slope resistance - - 0.163 mΩ dv/dt Critical rate of rise of off-state voltage 200 - - IDRM Peak off-state current - - IRRM Peak reverse current - VGT Gate trigger voltage IGT VD=80% VDRM, Linear ramp, Gate O/C V/µs 300 Rated VDRM mA - 300 Rated VRRM mA - - 3.0 Tj=25°C Gate trigger current - - 300 Tj=25°C IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time - 1.0 2.0 tgt Turn-on time - 2.0 3.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 1400 - µC Qra Recovered charge, 50% Chord - 700 920 µC Irm Reverse recovery current - 190 - trr Reverse recovery time - 7.0 - 40 - 45 50 - 60 - - 0.011 Double side cooled K/W - - 0.022 Single side cooled K/W 27 - 47 kN - 1.7 - kg tq Turn-off time (note 2) Rth(j-hs) Thermal resistance, junction to heatsink F Mounting force Wt Weight V VD=10V, IT=3A mA ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr=50V µs ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs ITM=4000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for details of tq codes. Introduction The R2714 series of Distributed Gate thyristors have fast switching characteristics provided by a regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for medium current, medium frequency applications. Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 2 of 12 A October, 2001 µs WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 16 18 VDRM VDSM VRRM V 1600 1800 VRSM V 1700 1900 VD VR DC V 1040 1150 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 9.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 3 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x 10.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink) and TSINK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) ) 11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below. Fig. 1 (ii) Qrr is based on a 150µs integration time. 150 µs i.e. Qrr = ∫i rr .dt 0 (iii) K Factor = t1 t2 12.0 Reverse Recovery Loss 12.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TSINK ( new) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. Rth(J-Hs) = d.c. thermal resistance (°C/W). Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 4 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 12.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f ) Where TSINK (new) is the required maximum heat sink temperature and TSINK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Vr = Commutating source voltage CS = Snubber capacitance R = Snubber resistance 13.0 Gate Drive The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than 0.5µs. This gate drive must be applied when using the full di/dt capability of the device. The duration of pulse may need to be configured with respect to the application but should be no shorter than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in charge to trigger. Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 5 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x 14.0 Computer Modelling Parameters 14.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 is represented in two ways; (i) the well established Vo and rs tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 125°C Coefficients A 1.96505549 B -0.1486497 C 1.1399×10 D 0.0112558 -4 14.2 D.C. Thermal Impedance Calculation −t τ rt = ∑ rp ⋅ 1 − e p p =1 p=n Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Term rp τp Term rp τp Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. 1 -2 1.42×10 D.C. Single Side Cooled 2 3 4 -3 -3 -4 2.34×10 3.39×10 8.87×10 9.25 2.07957 0.23675 5 -4 6.00×10 6 -4 4.66×10 0.0107 2.89×10 0.07935 1 -3 5.60×10 D.C. Double Side Cooled 2 -3 2.81×10 3 -3 1.42×10 4 -4 9.34×10 1.593884 0.28583 0.07721 4.84×10 Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 6 of 12 -3 -3 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance 10000 0.1 SSC 0.022K/W Tj = 125°C DSC 0.011K/W Transient Thermal Impedance - Z (th)t (K/W) Instantaneous on-state current - I T (A) 0.01 1000 0.001 0.0001 R2714ZC16x - 18x Issue 1 R2714ZC16x - 18x Issue 1 100 1.2 1.4 1.6 1.8 2 0.00001 0.0001 2.2 0.001 0.01 0.1 Instantaneous on-state voltage - VT (V) 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits ` Figure 4 - Gate characteristics - Power curves 20 10 R2714ZC16x - 18x Issue 1 R2714ZC16x - 18x Issue 1 Tj=25°C 9 Tj=25°C 18 8 16 7 14 Gate Trigger Voltage - V GT (V) Gate Trigger Voltage - V GT (V) Max VG dc 6 Max VG dc 5 IGT, VGT 4 12 10 8 PG Max 30W dc 6 -40°C -10°C 2 25°C 125°C 3 PG 5W dc 4 Min VG dc 2 IGD, VGD 1 Min VG dc 0 0 0 0.2 0.4 0.6 0.8 0 1 Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord) 10000 10000 4kA 4kA 1kA Recovered charge - Q ra (µC) Total recovered charge - Q rr (µC) 2kA 500A 1000 2kA 1kA 1000 500A Tj = 125°C Tj = 125°C R2714ZC16x - 18x Issue 1 R2714ZC16x - 18x Issue 1 100 100 10 100 1000 10 Commutation rate - di/dt (A/µs) Figure 7 - Peak reverse recovery current, Irm 1000 Figure 8 - Maximum recovery time, trr (50% chord) 100 1000 R2714ZC16x - 18x Issue 1 4kA 2kA 1kA 500A Tj = 125°C Reverse recovery time - trr (µs) Reverse recovery current - I rm (A) 100 Commutation rate - di/dt (A/µs) 100 10 4kA 2kA 1kA 500A Tj = 125°C R2714ZC16x - 18x Issue 1 1 10 10 100 10 1000 Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 100 1000 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Page 8 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse 10 1.00E+03 R2714ZC16x - 18x Issue 1 Tj=125°C 1.00E+02 4000A 2000A Energy per pulse (J) Energy per pulse - E r (J) 3000A 1000A 1 1.00E+01 8kA 6kA 4kA 1.00E+00 2kA Snubber 0.25µF, 5Ω 1.00E-01 1kA Tj = 125°C Vrm =0.67%VDRM R2714ZC16x - 18x Issue 1 1.00E-02 1.00E-05 0.1 10 100 1000 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings 1.00E+05 1.00E+05 R2714ZC16x - 18x Issue 1 1kA THs=55°C 100% Duty Cycle 100% Duty Cycle 2kA 2kA 1.00E+04 1.00E+04 4kA 4kA Frequency (Hz) Frequency (Hz) 6kA 8kA 1.00E+03 1.00E+02 6kA 1.00E+03 8kA 1.00E+02 THs=85°C R2714ZC16x - 18x Issue 1 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Pulse Width (s) Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 9 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings 1.00E+05 1.00E+05 1kA 2kA 2kA 100% Duty Cycle 1.00E+04 100% Duty Cycle 1.00E+04 4kA 4kA 6kA Frequency (Hz) Frequency (Hz) 6kA 8kA 1.00E+03 1.00E+02 8kA 1.00E+03 1.00E+02 THs =55°C THs=55°C di/dt=100A/µs R2714ZC16x - 18x Issue 1 di/dt=500A/µs R2714ZC16x - 18x Issue 1 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings 1.00E+05 1.00E+05 100% Duty Cycle 1kA 100% Duty Cycle 2kA 1.00E+04 1.00E+04 2kA 4kA Frequency (Hz) Frequency (Hz) 4kA 6A 1.00E+03 8kA 1.00E+02 6kA 1.00E+03 8kA 1.00E+02 THs=85°C THs=85°C di/dt=100A/µs di/dt=500A/µs R2714ZC16x - 18x Issue 1 R2714ZC16x - 18x Issue 1 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse 1.00E+03 1.00E+03 R2714ZC16x - 18x Issue 1 R2714ZC16x - 18x Issue 1 di/dt=100A/µs Tj=125°C di/dt=500A/µs Tj=125°C 1.00E+02 1.00E+01 Energy per pulse (J) Energy per pulse (J) 1.00E+02 8kA 6kA 4kA 1.00E+00 8kA 6kA 1.00E+01 4kA 2kA 1kA 2kA 1.00E+00 1.00E-01 1kA 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-01 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) 2 Figure 19 - Maximum surge and I t Ratings Gate may temporarily lose control of conduction angle 100000 1.00E+08 I t: VRRM≤10V 2 I t: 60% VRRM ITSM: VRRM≤10V 10000 1.00E+07 ITSM: 60% VRRM Maximum I2t (A2s) Total peak half sine surge current - I TSM (A) 2 Tj (initial) = 125°C R2714ZC16x - 18x Issue 1 1000 1.00E+06 1 3 5 10 Duration of surge (ms) Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 1 5 10 50 100 Duration of surge (cycles @ 50Hz) Page 11 of 12 October, 2001 WESTCODE Positive development in power electronics R2714ZC16x to R2714ZC18x Outline Drawing & Ordering Information ORDERING INFORMATION (Please quote 10 digit code as below) R2714 ZC ♦♦ ♦ Fixed Type Code Fixed Outline Code Fixed Voltage Code VDRM/100 16-18 tq Code H=40µs, J=50µs, K=60µs Typical order code: R2714ZC18K – 1800V VDRM, 60µs tq, 37.7mm clamp height capsule. WESTCODE UK: Westcode Semiconductors Ltd. P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL. Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448 E-Mail: [email protected] USA: Westcode Semiconductors Inc. 3270 Cherry Avenue, Long Beach, California 90807 Tel: 562 595 6971 Fax: 562 595 8182 E-Mail: [email protected] Internet: http://www.westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 12 of 12 October, 2001

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