MIMMG300WB120B6TN

MIMMG300WB120B6TN
1200V 300A Dual IGBT Module
RoHS Compliant
FEATURES
□ IGBT3 CHIP(Trench+Field Stop technology)
□ Low saturation voltage and positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Temperature sense included
APPLICATIONS
□ AC motor control
□ Motion/servo control
GWB Series Module
□ Photovoltaic/Fuel cell
□ Inverter and power supplies
INVERTER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
500
A
TC=80°C
300
A
tp=1ms
600
A
1400
W
TVj=25°C
1200
V
TC=25°C
300
A
TC=80°C
180
A
tp=1ms
600
A
17500
A2 s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2 t
TVj =125°C, t=10ms, VR=0V
MIMMG300WB120B6TN
INVERTER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.0
5.8
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=12mA
Collector - Emitter
IC=300A, VGE=15V, TVj=25°C
1.7
V
Saturation Voltage
IC=300A, VGE=15V, TVj=125°C
2.0
V
VCE=1200V, VGE=0V, TVj=25°C
1
mA
VCE=1200V, VGE=0V, TVj=125°C
5
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=300A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
2.5
Ω
2.7
µC
21
nF
1.0
nF
VCC=600V,IC=300A,
TVj =25°C
160
ns
RG =2.4Ω,
TVj =125°C
170
ns
VGE=±15V,
TVj =25°C
45
ns
Inductive Load
TVj =125°C
50
ns
VCC=600V,IC=300A,
TVj =25°C
460
ns
RG =2.4Ω,
TVj =125°C
530
ns
VGE=±15V,
TVj =25°C
100
ns
Inductive Load
TVj =125°C
150
ns
VCC=600V,IC=300A,
TVj =25°C
13
mJ
RG =2.4Ω,
TVj =125°C
20
mJ
VGE=±15V,
TVj =25°C
25
mJ
Inductive Load
TVj =125°C
37
mJ
1200
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.09
K /W
Diode
IF=300A , VGE=0V, TVj =25°C
1.65
V
IF=300A , VGE=0V, TVj =125°C
1.6
V
Reverse Recovery Time
IF=300A , VR=600V
225
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-4800A/μs
255
A
Erec
Reverse Recovery Energy
TVj =125°C
24
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
trr
0.16
K /W
MIMMG300WB120B6TN
NTC CHARACTERISTIC VALUES
Symbol
R25
TC=25°C unless otherwise specified
Parameter
Test Conditions
Resistance
Min.
TC =25°C
B25/50
MODULE CHARACTERISTICS
Symbol
Max.
Unit
5
KΩ
3375
K
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Torque
Module-to-Sink
Recommended（M5）
2.5
5
N· m
Torque
Module Electrodes
Recommended（M6）
3
5
N· m
AC, t=1min
3000
350
VGE =15V
500
400
500
400
TVj =25°C
IC (A)
IC (A)
g
600
600
300
TVj =125°C
300
TVj =125°C
200
200
100
100
0
0
600
1.5 2.0 2.5 3.0 3.5
VCE（V）
Figure1. Typical Output Characteristics
IGBT-inverter
0.5
0
1.0
VCE =20V
500
120
TVj =125°C
Eon Eoff (mJ)
300
200
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE（V）
Figure2. Typical Output Characteristics
IGBT-inverter
VCE=600V
IC=300A
VGE=±15V
TVj =125°C
100
TVj =25°C
400
Eon
80
60
40
Eoff
20
100
0
V
210
Weight
IC (A)
Typ.
5
6
7
9
10
8
11 12
VGE（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
0
12
16
24
20
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
0
4
8
MIMMG300WB120B6TN
90
80
70
600
500
60
400
Eoff
50
IC (A)
Eon Eoff (mJ)
700
VCE=600V
RG=2.4Ω
VGE=±15V
TVj =125°C
40
30
300
Eon
RG=2.4Ω
VGE=±15V
TVj =125°C
200
20
100
10
0
0
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
300
400 500 600
IC（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
100
200
600
0
200
400
32
IF=300A
VCE=600V
TVj =125°C
28
500
24
Erec (mJ)
IF (A)
400
300
200
20
16
12
TVj =125°C
8
100
0
0
TVj =25°C
4
0
2.0
1.6
1.2
2.4
VF（V）
Figure7. Diode Forward Characteristics
Diode -inverter
0.4
0.8
1
0
4
8
12
16
24
20
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter
100000
0.1
10000
IGBT
0.01
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure9. Transient Thermal Impedance of
Diode and IGBT-inverter
R (Ω)
ZthJC (K/W)
Diode
R
1000
100
0
20
60 80 100 120 140 160
TC（°C）
Figure10. NTC Characteristics
40
MIMMG300WB120B6TN
Figure11. Circuit Diagram
Dimensions (mm)
Figure12. Package Outline