2SB649/2SB649A TO-126C Transistor (PNP) TO-126C 1. EMITTER 123 4.040 4.240 3. BASE 10.800 11.200 Features 1.170 1.370 15.300 15.700 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage Value Units -180 V -120 2SB649A -160 VEBO Emitter-Base Voltage IC Collector Current –Continuous PC Collector Power Dissipation TJ Tstg 1.300 1.500 0.660 0.860 2.280 TYP. 2SB649 V -1.5 A 1 W Junction Temperature 150 ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Symbol Parameter Test unless 0.450 0.600 4.460 4.660 V -5 3.100 3.300 2.700 2.900 Low frequency power amplifier complementary pair with 2SD669/A Symbol 3.000 1.800 3.400 2.200 7.800 8.200 2. COLLECTOR Dimensions in inches and (millimeters) otherwise specified) conditions MIN IC =-1mA,IE=0 TYP MAX UNIT -180 V -120 -160 V -5 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC =0 Collector cut-off current ICBO VCB=-160V,IE=0 -10 µA Emitter cut-off current IEBO VEB=-4V,IC=0 -10 µA hFE(1) DC current gain hFE(2) VCE(sat) Collector-emitter saturation voltage IC=-10mA,IB=0 2SB649 2SB649A VCE=-5V,IC=-150mA 2SB649A VCE=-5V,IC=-500mA VBE VCE=-5V,IC=-150mA Transition frequency fT VCE=-5V,IC=-150mA Cob CLASSIFICATION OF Range 2SB649 2SB649A 320 200 30 VCB=-10V,IE=0,f=1MHz -1 V -1.5 V 140 MHz 27 pF hFE(1) B Rank 60 60 IC=-500mA,IB=-50mA Base-emitter voltage Collector output capacitance 2SB649 C 60-120 100-200 60-120 100-200 D 160-320 2SB649/2SB649A TO-126C Transistor (PNP) Typical Characteristics 2SB649/2SB649A TO-126C Transistor (PNP)