2SB1274(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR Features 1 2 3. EMITTER 3 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-5mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-5V, IC=-500mA 70 hFE(2) VCE=-5V, IC=-3A 20 280 DC current gain VCE(sat) Collector-emitter saturation voltage IC=-2A, IB=-200mA -1 V -1 V Base-emitter voltage VBE VCE=-5V, IC=-500mA Transition frequency fT VCE=-5V, IC=-500mA 100 MHz VCB=-10V, IE=0, f=1MHz 60 pF Cob Collector output capacitance CLASSIFICATION OF Rank Range hFE(1) Q R S 70-140 100-200 140-280 2SB1274(PNP) TO-220 Transistor Typical Characteristics