2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =100μA, IE=0 150 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 150 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 10 μA Emitter cut-off current IEBO VEB=5V, IC=0 10 μA DC current gain hFE VCE=10V, IC=0.5A VCE(sat) IC=0.5A, IB=50mA Base-emitter voltage VBE VCE=10V, IC=0.5A Transition frequency fT VCE=10V, IC=0.5A 4 MHz VCB=10V, IE=0, f=1MHz 35 pF Collector-emitter saturation voltage Collector output capacitance Cob 40 140 0.65 1.5 V 0.85 V 2SC2073(NPN) TO-220 Transistor Typical Characteristics