2SA1145 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 3. BASE 8.400 8.800 0.900 1.100 Features 0.400 0.600 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) High transition frequency: fT=200MHz(Typ.) 13.800 14.200 1.500 TYP 2.900 3.100 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1.600 0.000 0.380 0.400 4.700 0.500 5.100 4.000 1.730 2.030 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100 μA, IE=0 -150 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-100 μA, IC=0 -5 V Collector cut-off current ICBO VCB=-150 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5 V, IC=0 -0.1 μA DC current gain hFE VCE=-5 V, IC=-10mA VCE(sat) IC=-10mA, IB=-1mA -1 V Base-emitter voltage VBE VCE=-5 V, IC=-10mA -0.8 V Transition frequency fT VCE=-5 V, IC=-10mA 200 MHz VCB=-10 V, IE=0, f=1 MHz 2.5 pF Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF Rank Range Marking Cob 80 240 hFE O Y 80-160 120-240 2SA1145 TO-92MOD Transistor (PNP) Typical Characteristics