2SA1162 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Collector output capacitance Cob Noise figure NF CLASSIFICATION OF Rank Range Marking 70 IC=-100mA,IB=-10mA 400 -0.3 VCE=-10V,IC=-1mA 80 MHz VCB=-10V,IE=0,f=1MHz VCE=-6V,IC=0.1mA,f=1KHz, Rg=10KΩ V 7 pF 10 dB hFE O Y GR(G) 70-140 120-240 200-400 SO SY SG 2SA1162 SOT-23 Transistor(PNP) Typical Characteristics