2SD2114 SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=10μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 25 V IC =1mA, IB=0 20 V V(BR)EBO IE=10μA, IC=0 12 V Collector cut-off current ICBO VCB=20 V, IE=0 0.5 μA Emitter cut-off current IEBO VEB=10V,IC=0 0.5 μA DC current gain hFE VCE=3V, IC=10mA Collector-emitter saturation voltage R(on) On resistance Rank Range f=100MHz Cob output capacitance 820 2700 IC= 500mA, IB=20 mA VCE=10V, IC=50mA fT Transition frequency CLASSIFICATION OF VCE(sat) IE=0 VCB=10V,IE=0,f=1MHz Vin=0.1V(rms),IB=1mA, f=1KHZ 0.4 V 350 MHz 8 pF 0.8 Ω hFE V W 820-1800 1200-2700 2SD2114 SOT-23 Transistor(NPN) Typical characteristics 2SD2114 SOT-23 Transistor(NPN)