RoHS RoHS NKT26A/NKH26A Series SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 27A (ADD-A-PAK Power Modules) 80 3 21 5.6 5 4 ADD-A-PAK 13.6 7 2 6 1 2-Ø6.4 15 20 20 15 92 FEATURES • High voltage 68 3-M5 SCREWS • Electrically isolated by DBC ceramic (AI 2O3) 4-2.8x0.8 18 31 • Industrial standard package 5 6 • High surge capability 29.5 • 3000 VRMS isolating voltage • Glass passivated chips • Modules uses high voltage power thyristor/diodes in two basic configurations • Simple mounting All dimensions in millimeters • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS (6) (7) NKT • DC motor control and drives (5) (4) • Battery charges • Welders • Power converters NKH • Lighting control (5) (4) • Heat and temperature control PRODUCT SUMMARY 27 A IT(AV) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUE UNITS 27 A IT(AV) 85 °C IT(RMS) 85 °C 60 50 Hz 520 ITSM /IFSM I2t 60 Hz 546 50 Hz 1.35 60 Hz 1.23 I2√t 13.5 A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 RoHS RoHS NKT26A/NKH26A Series SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKT26..A NKH26..A IRRM /I DRM AT 125 °C mA 8 FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle, on-state non-repetitive surge current SYMBOL IT(AV) lT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave ,50Hz 180° conduction, half sine wave ,50Hz ,TC = 85°C t = 10 ms I 2t No voltage reapplied t = 8.3 ms A 85 °C 60 t = 8.3 ms A 546 Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms 2√ UNITS 27 520 t = 8.3 ms t = 10 ms Maximum I 2t for fusing VALUE 1.35 1.23 kA2s 0.95 0.86 Maximum I 2√t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM ITM =80A , TJ = 25 °C, 180° conduction 1.6 Maximum forward voltage drop VFM IFM =80A , TJ = 25 °C, 180° conduction 1.3 13.5 kA2√s V Maximum holding current IH Anode supply = 6 V,resistive load, TJ = 25 °C 150 Maximum latching current IL Anode supply = 6 V resistive load, TJ = 25 °C 400 SYMBOL TEST CONDITIONS VALUES UNITS 8 mA mA BLOCKING PARAMETER Maximum peak reverse and off-state leakage current IRRM IDRM TJ = 125 °C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM www.nellsemi.com Page 2 of 4 2500 (1min) 3000 (1s) 500 V V/μs NKT26A/NKH26A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak negative gate voltage - VGT 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V Maximum required DC gate voltage to trigger VGT 0.7~1.5 Anode supply = 6 V, resistive load; Ra = 1 Ω TJ = 25 °C Maximum required DC I GT gate current to trigger Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 20~100 mA 0.25 V 10 mA 150 A/μs TJ = TJ maximum, 66.7% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to ca se per junction RthJC DC operation 0.7 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.19 UNITS °C °C/W AAP to heatsink, M6 Mounting torque ± 10 % busbar to AAP, M5 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 N.m 120 g 4.23 oz. Approximate weight ADD-A-PAK Case style ORDERING INFORMATION TABLE Device code www.nellsemi.com NK T 26 1 2 3 / 16 A 4 5 1 - Module type 2 - Circuit configuration 3 - Current rating: IT(AV) 4 - Voltage code x 100 = V RRM 5 - Assembly type,”A” for soldering type Page 3 of 4 RoHS RoHS NKT26A/NKH26A Series SEMICONDUCTOR Nell High Power Products Fig.1 Peak On-state Voltage vs. Peak On-state Current Fig.2 Max. Junction To case Thermal Impedance Vs. Time 0.6 Max.Junction To case Thermal impedance (°C/W) 3.6 Peak On-state voltage (V) 3.2 2.8 2.4 2 1.6 1.2 0.5 0.4 0.3 0.2 0.1 0 0.8 10 100 1000 0.001 0.01 0.1 Peak On-state current (A) Time (s) Fig.3 Power Dissipation Vs. Average On-state Current Fig.4 Case Temperature Vs. Average O n-state Current 130 60 Max. Case Temperature (°C) 180° 50 Max. Power Dissipation (W) 10 1 120° 90° 40 60° 30° 30 20 10 120 110 100 90 80 60° 30° 70 90° 120° 180° 0 0 5 10 15 20 25 30 35 60 5 0 10 15 20 30 25 35 40 2 5 Average On-state Current Average On-state Current (A) Fig.5 Surge On-state Current Vs. Cycles Fig.6 Gate characteristics 2 1.2 Gate voltage (V) Surge On-state current (KA) 1.4 1 0.8 0.6 10¹ 5 2 10º 5 2 0.4 0.2 1 www.nellsemi.com 10 Time(cycles) 100 10¹ 10¹ 2 5 10² 2 5 10³ Gate current (mA) Page 4 of 4