Bulletin I25227 09/06 ST380CHPbF SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability Extended temperature range 960A Lead Free Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (E-PUK) Major Ratings and Characteristics Parameters ST380CH..C Units 960 A 80 °C 2220 A 25 °C @ 50Hz 12500 A @ 60Hz 13000 A @ 50Hz 782 KA2s @ 60Hz 713 KA2s 400 to 600 V 100 µs - 40 to 150 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I2 t V DRM/V RRM tq typical TJ www.irf.com 1 ST380CHPbF Series Bulletin I25227 09/06 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 04 400 500 06 600 700 Type number ST380CH..C 100 On-state Conduction Parameter I T(AV) ST380CH..C Units Conditions Max. average on-state current 960 (440) A 180° conduction, half sine wave @ Heatsink temperature 80 (110) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 2220 DC @ 25°C heatsink temperature double side cooled I TSM 2 I t Max. peak, one-cycle 12500 non-repetitive surge current 13000 2 Maximum I t for fusing t = 10ms No voltage t = 8.3ms reapplied 10500 t = 10ms 100% VRRM 11000 t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 782 713 A KA2s 553 505 I √t 2 Maximum I √t for fusing 2 V T(TO)1 Low level value of threshold 7820 0.85 t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V voltage V T(TO)2 High level value of threshold KA √s 2 (I > π x IT(AV)),TJ = TJ max. 0.88 voltage r t1 Low level value of on-state (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.25 mΩ slope resistance r t2 High level value of on-state (I > π x IT(AV)),TJ = TJ max. 0.24 slope resistance VTM Max. on-state voltage 1.58 IH Maximum holding current 600 IL Typical latching current 1000 V mA I = 2900A, TJ = TJ max, t = 10ms sine pulse pk p T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td Typical delay time ST380CH..C 1000 Units Conditions A/µs 1.0 µs tq 2 Typical turn-off time 100 Gate drive 20V, 20Ω, t ≤ 1µs r TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs www.irf.com ST380CHPbF Series Bulletin I25227 09/06 Blocking Parameter dv/dt Maximum critical rate of rise of I RRM I DRM Max. peak reverse and off-state leakage current ST380CH..C Units Conditions 500 off-state voltage V/μs TJ = TJ max. linear to 80% rated VDRM 100 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST380CH..C Maximum peak gate power 2.0 IGM Max. peak positive gate current 3.0 +VGM Maximum peak positive Maximum peak negative A TJ = TJ max, t p ≤ 5ms V TJ = TJ max, t ≤ 5ms TYP. MAX. 200 - 100 200 40 - TJ = 150°C 2.5 - TJ = - 40°C 1.8 3.0 1.0 - TJ = - 40°C DC gate current required to trigger DC gate voltage required to trigger p 5.0 gate voltage VGT TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 10.0 P G(AV) Maximum average gate power -VGM Units Conditions mA V TJ = 25°C Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 150°C I GD DC gate current not to trigger 10 mA VGD DC gate voltage not to trigger 0.25 V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST380CH..C TJ Max. operating temperature range -40 to 150 Tstg Max. storage temperature range -40 to 150 R thJ-hs Max. thermal resistance, junction to heatsink Units Conditions °C 0.09 0.04 DC operation single side cooled K/W R thC-hs Max. thermal resistance, 0.02 case to heatsink 0.01 Mounting force, ± 10% 9800 N (1000) (Kg) 83 g F wt Approximate weight Case style www.irf.com K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled TO - 200AB (E-PUK) See Outline Table 3 ST380CHPbF Series Bulletin I25227 09/06 ΔRthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 TJ = TJ max. K/W Ordering Information Table Device Code ST 38 0 CH 06 C 1 1 2 3 4 5 6 7 PbF 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - CH = Ceramic Puk, High temperature 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 9 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 9 4 - = 1000V/µsec (Special selection) Lead Free www.irf.com ST380CHPbF Series Bulletin I25227 09/06 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 25°± 5° 42 (1.65) MAX. 150 ST380CH..C Series (Single Side Cooled) RthJ-hs (DC) = 0.09 K/ W 140 130 120 110 Conduc tion Angle 100 90 30° 80 60° 90° 70 120° 60 180° 50 40 0 100 200 300 400 500 600 700 800 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 28 (1.10) 150 ST380CH..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/ W 140 130 120 110 100 Conduc tion Period 90 80 70 60 50 40 30° 30 60° 90° 120° 20 0 200 400 600 180° DC 800 1000 1200 1400 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST380CHPbF Series 150 ST380CH..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 140 130 120 110 100 90 Conduction Angle 80 70 30° 60 50 60° 90° 120° 40 30 180° 20 0 400 800 1200 1600 Ma ximum Allowab le Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25227 09/06 150 ST380CH..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 140 130 120 110 100 90 Conduc tion Period 80 70 30° 60 60° 50 90° 120° 40 30 180° DC 20 0 500 Average On-state Current (A) 1000 Conduction Angle ST380CH..C Series TJ = 150°C 0 0 400 800 1200 Maximum Average On-state Power Loss (W) 1500 2500 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 RMS Limit 1500 Conduc tion Period 1000 ST380CH..C Series TJ = 150°C 500 0 1600 0 500 1000 1500 2000 2500 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 12000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150°C @60 Hz 0.0083 s @50 Hz 0.0100 s 11000 10000 9000 8000 7000 ST380CH..C Series 6000 5000 1 6 RMS Limit 500 2000 Fig. 4 - Current Ratings Characteristics 10 100 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) 2500 2000 1500 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 180° 120° 90° 60° 30° 1000 13000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 12000 Of Conduc tion May Not Be Maintained. Initial TJ = 150°C 11000 No Voltage Reapplied Rated VRRM Reapplied 10000 9000 8000 7000 6000 ST380CH..C Series 5000 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST380CHPbF Series Bulletin I25227 09/06 Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 150°C 1000 ST380CH..C Series 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedanc e ZthJ-hs (K/W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 ST380CH..C Series Steady State Value 0.01 R thJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for 10 (1) PGM = 10W, tp (2) PGM = 20W, tp (3) PGM = 40W, tp (4) PGM = 60W, tp <=30% ra ted d i/ dt : 10V, 10ohms = 4ms = 2ms = 1ms = 0.66ms (a) tr<=1 µs (b) IGD 0.1 0.001 0.01 Tj=-40 °C VGD Tj=25 °C 1 Tj=150 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST380CH..C Series 0.1 (2) (3) (4) Frequency Limited by PG(AV) 1 10 100 Insta ntaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7 ST380CHPbF Series Bulletin I25227 09/06 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09 /06 8 www.irf.com