na. TELEPHONE: (973) 378-2922 (212) 227-6005 FAX: (973) 3764960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 3N165/3N166 ABSOLUTE MAXIMUM RATINGS (Note 1) (TA - 25°C unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165 40V 3N166 30V Transient Gate-Source Voltage (Note 3) ±125 Gate-Gate Voltage ±80V Drain Current (Note 2) 50mA Storage Temperature -65°C to +200°C Operating Temperature -55°C to +150°C Lead Temperature (Soldering, 10sec) +300°C Power Dissipation One Side 300mW Both Sides 525mW Total Derating above 25°C 4.2mW/°C NOTE: Stresses above those listed under "Absoluts Maximum Ratings' may cause permanent damage to the device. These are $nst ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. BOTTOM VIEW .100 .£«&. ELECTRICAL CHARACTERISTICS (TA - 25°C and VBS - 0 unless otherwise specified) SYMBOL IQSSR PARAMETER MIN MAX UNITS -10 IQSSF -25 TEST CONDITIONS VGS = 40V 10 Gate Reverse Leakage Current VGS = -40V pA | TA = +125°C loss Drain to Source Leakage Current -200 VDS = -20V ISDS Source to Drain Leakage Current -400 VSD = -20V, VOB = 0 lD(on) On Drain Current -5 -30 mA Vosilh) Gate Source Threshold Voltage -2 -5 v Vosw Gala Source Threshold Voltage -2 -S rns<on) Drain Source ON Resistance 300 Vos = -15V, VGS = -10V VDS- -15V, lD--10uA VDS-VQS. lo--10uA ohms Vos - -20V, ID - -100uA N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice Information I'umished by NJ Scmi-Conductors is believed to be both accurate and reliable at the time of going to press. However VI Semi-Conductors .t>smncs no responsibility for any errors or omissions discovered in its use NJ .Semi-Conduttors encourages customers to verify (hat datasheets are current before placing orders ELECTRICAL CHARACTERISTICS (Continued) (TA - 25°C and VBS - 0 unless otherwise specified) SYMBOL PARAMETER M1N MAX 1500 3000 git g°> Output Admittance 300 Ci.. Input Capacitance 3.0 C« Reverse Transfer Capacitance 0.7 CM. Output Capacitance RefYi.) Common Source Forward Transconductance Forward Transconductance MATCHING CHARACTERISTICS SYMBOL UNITS TEST CONDITIONS ia VDS = -15V, ID = -10mA, f = 1kHz PF VDS = -15V, ID = -10mA, f = 1MHz (Note 4) US VDS - -15V, ID = -10mA, f » 100MHz (Note 4) 3.0 1200 3N165 PARAMETER MIN MAX 0.90 1.0 UNITS TEST CONDITIONS YM/YW Forward Transconductance Ratio VOSLZ Gate Source Threshold Voltage Differential 100 mV VOS--15V. lD = -500(iA AVosi-2 AT Gale Source Threshold Voltage Differential Change with Temperature 100 |iV/°C VDS = -15V, lA--500uA TA « -55°C to +25°C NOTES: 1. See handling precautions, 2. Per transistor. 3. Devices must not be tested at ±125V more than once, nor longer than 300ms. 4. For design reference only, not 100% tested. VDS = -1 5V, ID - -SOOuA, f = 1 kHz