^Emi-Conductoi ^Products., One.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES • High power gain PIN DESCRIPTION • Easy power control 1 • Good thermal stability 2 drain 1 drain 2 • Gold metallization ensures excellent reliability. APPLICATIONS 3 gate 1 4 gate 2 5 source • Broadcast transmitters in the VHP frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. sT^ CAUTION 3 Top view This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. f (MHz) VDS (V) PL (W) GP (dB) 108 108 50 CW, class-C 300 300 >20 typ. 18 (%) >60 typ. 80 CW, class-AB 225 250 >14 typ. 16 >50 typ. 55 MODE OF OPERATION CW, class-B 50 50 TlD WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. N.I Semi-t onduclors reserves ih« right to change test conditions, parameter limits ;md package dimensions without notice Information t'urrmhed by NJ Scmi-t on Juctort it believed to he both accurate and reliable <u the lime at going to press. However \ Vim•(. oiiduUors .bsiunes uu rcvfx.nisibiliiy lor ;my errors «r omissions discovered in its ti.se NJ Seim-t.oiiJtMi r i ii';timcrs hi vail\« tlniashcets ire current helbrc plnciiia nriten VHP push-pull power MOS transistor BLF278 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT Per transistor section VDS VGS ID drain-source voltage - 125 V gate-source voltage - ±20 V drain current (DC) - 18 A Plot total power dissipation — 500 W Tmb £ 25 °C; total device; both sections equally loaded Tstg storage temperature -65 150 °C Tj junction temperature - 200 °C THERMAL CHARACTERISTICS SYMBOL CONDITIONS PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction total device; both sections to mounting base equally loaded. max. 0.35 K/W Rth mb-h thermal resistance from mounting base to heatsink max. 0.15 K/W total device; both sections equally loaded. MRAHiS 100 MGE6W 500 ptot 'D (W) (A) _.. 10 (1) / / /* ^ "^ X ^ 'Sv^ <1) 400 ~\ (2) \^ / V V (2) 300 ^v •V,. ^^s. s \^ v^^ 200 ^x "•v 100 1 10 100 500 VDS Total de\)nee, Curr both sections equally loaded, (2) Tmb ent is this area may be limited by Roson= 25 °C. Fig.2 DC SOAR. 0 40 80 120 160 Th (°C) (V) Total de\)ice;Con both sections equally loaded, inuous operation, (2) Sho •t-time operation during mismatch. Fig. 3 Power derating curves. VHP push-pull power MOS transistor BLF278 CHARACTERISTICS Ti = 25 °C unless otherwise specified. SYMBOL PARAMETER MIN. CONDITIONS TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VQS = O; ID = 100mA 125 - - IDSS drain-source leakage current VGS = 0; VDS = 50 V - - 2.5 mA IGSS gate-source leakage current - - 1 HA VoSth gate-source threshold voltage VGS = ±20 V; VDS = 0 VDS = 10V; ID = 50mA 2 - 4.5 V AVGS gate-source voltage difference of both sections VDS = 10V; ID = 50mA — — 100 mV 9fs forward transconductance 6.2 - S 9fsi/gfs2 VDS = 10V;I D = 5A VDS = 10V;I D = 5 A 4.5 forward transconductance ratio of both sections 0.9 — 1.1 RDSOP bsx drain-source on-state resistance VGs = 10V;l D = 5A - 0.2 0.3 drain cut-off current VGS = 10V; VDS = 10V - 25 - cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz - 480 - CQS output capacitance VGS = 0; VDS = 50 V; f = 1 MHz - 190 - crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz - 14 - Cd-f drain-flange capacitance - 5.4 - V ii A PF PF PF PF VQS group indicator LIMITS (V) GROUP MIN. LIMITS (V) GROUP MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3