PRELIMINARY CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies PN: CGHV270 60MP such as Class A/B, F or Doherty amplifiers. The CGHV27060MP typical performance described in the datasheet is derived from a Class A/B reference design from 2.5-2.7GHz. Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain @ 41.5 dBm Avg POUT 18.25 18.5 18.25 dB ACLR @ 41.5 dBm Avg POUT -34 -37 -38 dBc Drain Efficiency @ 41.5 dBm Avg POUT 33 35 33 % Note: Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 125 mA. Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units 16.5 16.3 16.2 dB Output Power 84 82 79 W Drain Efficiency 71 69 65 % Gain Note: Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, PIN = 33 dBm Rev 1.1 – Septem ber 2015 Features - WCDMA Features - Pulsed • 2.5 - 2.7 GHz Reference Design Amplifier • 16.5 dB Gain at Pulsed PSAT • 18.5 dB Gain at 14 W PAVE • 70% Efficiency at Pulsed PSAT • -35 dBc ACLR at 14 W PAVE • 80W at Pulsed PSAT • 35% Efficiency at 14 W PAVE • High Degree of DPD Correction Can be Applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Symbol Rating Units Conditions VDSS 150 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10.4 mA 25˚C Maximum Drain Current1 IDMAX 6.3 A 25˚C Soldering Temperature2 TS 245 ˚C Thermal Resistance, Junction to Case3 RθJC 2.6 ˚C/W 85˚C, PDISS = 52 W Thermal Resistance Pulsed 10%, 100 μs, Junction to Case RθJC 1.95 ˚C/W 85˚C, PDISS = 62W, 100 μs/10% TC -40, +90 ˚C CW Case Operating Temperature4 Note: Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV27060MP 4 See also, the Power Dissipation De-rating Curve on Page 4. 1 Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 50 V, ID = 125 mA Saturated Drain Current2 IDS 8.4 10.4 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 10.4 mA DC Characteristics Conditions 1 VDS = 10 V, ID = 10.4 mA RF Characteristics (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted) 5 Saturated Output Power3,4 PSAT – 80 – W VDD = 50 V, IDQ = 125 mA Pulsed Drain Efficiency3,4 η – 70 – % VDD = 50 V, IDQ = 125 mA, POUT = PSAT Gain G – 16.5 – dB VDD = 50 V, IDQ = 125 mA, POUT = PSAT Gain G – 18.5 – dB VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm ACLR – -35 – dBc VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm η – 34 – % VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm 3,4 6 WCDMA Linearity6 Drain Efficiency6 VSWR – – TBD Y No damage at all phase angles, VDD = 50 V, IDQ = 125 mA, POUT = 60 W Pulsed CGS – 15.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 4.7 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.5 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Mismatch Stress3 Dynamic Characteristics Input Capacitance7 7 Notes: Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 100 µs, Duty Cycle = 10% 4 PSAT is defined as IGS = 1.0 mA peak 5 Measured in CGHV27060MP-TB. 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V. 7 Includes package. 1 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV27060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance CGHV27060MP Small Signal S-parameters in Test Fixture Figure 1. - Small Vdd Signal Gain and=Return Losses the CGHV27060MP = 50 V, Idq 125 mA, Tcaseof = 25°C Measured in Demonstration Amplifier Circuit CGHV27060MP-TB 20 Gain and Return Loss (dB) 15 10 5 0 -5 -10 S11 (dB) S21 (dB) -15 -20 S22 (dB) 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 Frequency (GHz) CGHV27060MP Pulsed Psat @ Pin = 33 dBm, 10% duty, 100 Output uS pulse Figure 2. - Gain, Power Added Efficiency & Average Power at width 10% Duty Cycle Vdd = 50 V, Idq = 125 mA, Tcase = 25°C for the CGHV27060MP Measured in Demonstration Amplifier Circuit CGHV27060MP-TB 100 30 Output Power 80 25 Efficiency 70 60 20 Gain 50 40 30 Gain (dB) Output Power (W), Efficiency (%) 90 15 Efficiency (%) Pout (W) Gain (dB) 20 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 10 2.80 Frequency (GHz) Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV27060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV27060MP Power Dissipation De-rating Curve Power dissipation derating curve vs. Max Tcase Pulsed (100 uS/ 10% duty) 100 90 Power dissipation (W) 80 70 60 Note 1 50 40 30 20 Linear CW 10 0 Pulse 100uS / 10% 0 50 100 150 200 250 Case Temperature (C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV27060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV27060MP Plastic Overmold Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units 2.7 GHz Power Output 60 W Package MP - Upper Frequency 1 Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV27060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV27060MP GaN HEMT Each Test board with GaN HEMT installed Each CGHV27060MP-AMP1 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV27060MP Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV27060MP Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf