CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Cree’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface Package Type : 3x4 DFN PN: CGH2703 0S mount, dual-flat-no-lead (DFN) package. Typical Performance 1.8 - 2.2 GHz (TC = 25˚C) , 28 V Parameter 1.8 GHz 2.0 GHz 2.2 GHz Units Small Signal Gain 20.0 20.4 19.5 dB Adjacent Channel Power @ POUT =5 W -39.5 -42.1 -39.1 dBc Drain Efficiency @ POUT = 5 W 31.8 32.8 33.8 % Input Return Loss -4.2 -6.4 -7.7 dB Note: Measured in the CGH27030S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Typical Performance 2.3 - 2.7 GHz (TC = 25˚C) , 28 V Parameter 2.3 GHz 2.5 GHz 2.7 GHz Units Small Signal Gain 21.1 20.6 20.0 dB Adjacent Channel Power @ POUT =3.2 W -32.0 -36.4 -33.6 dBc Drain Efficiency @ POUT = 3.2 W 37.8 36.2 35.0 % Input Return Loss -7.3 -7.9 -7.2 dB Note: Measured in the CGH27030S-AMP2 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Preliminary 15 Rev 2.0 – May 20 Features for 28 V in CGH27030S-AMP1 • • • • • • 1.8 - 2.2 GHz Operation 30 W Typical Output Power 18 dB Gain at 5 W PAVE -39 dBc ACLR at 5 W PAVE 33% efficiency at 5 W PAVE High degree of APD and DPD correction can be Features for 28 V in CGH27030S-AMP2 • • • • • • 2.3 - 2.7 GHz Operation 30 W Typical Output Power 18.5 dB Gain at 5 W PAVE -39 dBc ACLR at 5 W PAVE 36% efficiency at 5 W PAVE High degree of APD and DPD correction can be applied applied Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 7.2 mA 25˚C Maximum Drain Current1 IDMAX 3.0 A 25˚C Soldering Temperature2 TS 245 ˚C TC -40, +150 ˚C RθJC 3.43 ˚C/W Case Operating Temperature3 Thermal Resistance, Junction to Case4,5 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power Dissipation De-rating Curve on page 12. 4 Measured for the CGH27030S at PDISS = 21.6 W 5 The RTH for Cree’s demonstration amplifier, CGH27030S-AMP1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.29°C. The total RTH from the heat sink to the junction is 3.43°C + 3.29°C = 6.72°C/W. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 7.2 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 0.20 mA Saturated Drain Current IDS 5.8 7.0 – A VDS = 6.0 V, VGS = 2.0 V V(BR)DSS 84 – – VDC VGS = -8 V, ID = 7.2 mA 18.3 - dB VDD = 28 V, IDQ = 0.20 A, POUT = 37 dBm DC Characteristics Drain-Source Breakdown Voltage RF Characteristics Conditions 1 2,3 (TC = 25˚C, F0 = 2.2 GHz unless otherwise noted) Gain WCDMA Linerarity 4 G – ACLR – -39 – dBc VDD = 28 V, IDQ = 0.20 A, POUT = 37 dBm η – 33.7 - % VDD = 28 V, IDQ = 0.20 A, POUT = 37 dBm VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 28 V, IDQ = 0.20 A, POUT = 37 dBm Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Input Capacitance5 CGS – 8.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance5 CDS – 2.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.7 GHz 4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF 5 Includes package and internal matching components Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in CGH27030S-AMP1 - Small SignalLosses Gain and Return Losses vs Frequency SmallFigure Signal1. Gain and Return vs. Frequency for CGH27030S measured V = 28 V, I = 0.20 A in Application CircuitDQCGHV27030S-TB1 DD VDD=28 V, IDQ=0.20 A 25 Gain (dB) Input and Output Return Loss 20 15 10 S11 S21 5 S22 0 -5 -10 -15 1700 1800 1900 2000 2100 2200 2300 Frequency (MHz) Figure 2. - Typical Drain Efficiency and ACLR vs. Output Power VDD = 28 V, IDQ Drain = 0.20Efficiency A, 1c WCDMA, PAR 7.5 dB Power Typical and ACLR vs.= Output of CGH27030S measured in CGH27030S-TB1 VDD=28 V,IDQ=0.20 A, 1c WCDM, PAR=7.5 dB -10 40 -15 35 1p8ACLR 2p0ACLR 2p0EFF -25 ACLR (dBC) 30 Efficiency 1p8EFF 25 2p2EFF -30 20 -35 15 ACLR -40 10 -45 -50 5 19 21 23 25 27 29 Pout (dBm) 31 33 35 37 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 Efficiency (%) 2p2ACLR -20 CGH27030S Rev 2.0 Preliminary 39 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in CGH27030S-AMP1 Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency Typical Gain, Drain Efficincy and ACLR vs Frequency VDD =CGH27030S 28 V, IDQ = 0.20 A, PAVE 5 W, 1c WCDMA, PAR = 7.5 dB measured in =Application Circuit CGHV27030S-TB1 VDD=28 V, IDQ-0.20,PAVE=5W,1cWCDMA, PAR=7.5 dB 40 -30.0 Drain Efficiency 30 -32.5 Drain Efficiency -35.0 25 -37.5 Gain 20 Gain -40.0 15 -42.5 ACLR 10 ACLR -45.0 Gain EFF 5 0 -47.5 ACLR 1.8 1.9 1.9 2.0 2.0 2.1 Frequency (GHz) 2.1 2.2 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 ACLR (dBc) Gain (dB) & Drain Efficiency (%) 35 CGH27030S Rev 2.0 Preliminary 2.2 -50.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGH27030S-AMP1 D Z Source Z Load G S Frequency (MHz) Z Source 1800 3.2 - j1.6 11 + j0.2 2000 3.6 - j0.6 10.5 + j1.8 3.3 - j0.1 11 + j3.3 2200 Z Load Note : VDD = 28 V, IDQ = 0.20 A in the DFN package. Note2: Impedances are extracted from the CGH27030S-AMP1 application circuit and are not source and load pull data derived from the transistor. 1 CGH27030S-AMP1 Application Circuit Bill of Materials Designator Description Qty R1 RES, 1/16 W, 0603, 1%, 100 OHMS 1 R2 RES, 1/16 W, 0603, 1%, 5.1 OHMS 1 C1 CAP, 6.8 pF, ±0.25 pF, 0603, ATC 1 C2 CAP, 2.4 pF, ±0.01 pF, 0603, ATC 1 C3, C8, C9, C10 CAP, 10.0 pF, ±0.5 pF, 0603, ATC 3 C12 CAP, 100.0 pF, 5%, 0603, ATC 1 C5 CAP, 470 pF, 5%, 100 V, 0603 1 CAP, 33000 pF, 0805, 10%, 100 V, X7R 2 C14 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 1 C7 CAP, 10 UF, 16 V, TANTALUM 1 C15 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 2 CGH27030S, QFN 1 C6, C13 J1, J2 Q1 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27030S-AMP1 Application Circuit, 28 V, 1.8-2.2 GHz CGH27030S-AMP1 Application Circuit Schematic, 28 V, 1.8-2.2 GHz Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27030S-AMP1 Application Circuit, 28 V, 1.8-2.2 GHz Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGH27030S-AMP2 Figure 4. - Small Signal Gain and Return Losses vs Frequency Small Signal Gain and Return Losses vs. Frequency for CGH27030S measured VDD = 28 V, IDQ = CGH27030S-TB2 0.20 A in Application Circuit VDD=28 V, IDQ=0.20 A 25 Gain (dB) Input and Output Return Loss 20 15 10 5 0 -5 -10 -15 S11 S21 -20 S22 -25 2200 2300 2400 2500 2600 2700 2800 Frequency (MHz) Figure 5. - Typical Drain Efficiency and ACLR Typical Drain Efficiency and ACLRvs. vs.Output OutputPower Power measured in CGHV27030S-TB2 VDD = 28 V,ofIDQCGH27030S = 0.20 A, 1c WCDMA, PAR = 7.5 dB VDD=28 V,IDQ=0.20 A, 1c WCDM, PAR=7.5 dB 0 45 -5 40 ACLR2p3 ACLR2p5 35 ACLR2p7 Efficiency EFF2p3 -15 30 EFF2p5 EFF2p7 -20 25 -25 20 -30 15 -35 10 ACLR -40 -45 5 19 21 23 25 27 29 Pout (dBm) 31 33 35 37 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 Efficiency (%) ACLR (dBC) -10 CGH27030S Rev 2.0 Preliminary 39 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance in Application Circuit CGH27030S-AMP2 Figure 6. - Typical Gain, Drain Efficiency and ACLR vs Frequency VDD = 28 V,Typical IDQ = 0.20 PAVE = 5 W, 1cand WCDMA, PAR = 7.5 dB Gain,A,Drain Efficincy ACLR vs Frequency CGH27030S measured in Application Circuit CGHV27030S-TB2 VDD=28 V, IDQ-0.20,PAVE=5W,1cWCDMA, PAR=7.5 dB 40 -10 Efficiency Drain Efficiency Drain Efficiency -15 30 -20 25 -25 Gain Gain 20 -30 15 -35 10 -40 ACLR Gain 5 ACLR (dBc) Gain (dB) & Drain Efficiency (%) 35 -45 EFF ACLR 0 2.3 2.4 2.5 Frequency (GHz) 2.6 2.7 -50 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Moisture Sensitivity Level Symbol Level Test Methodology MSL 3 (168 hours) IPC/JEDEC J-STD-20 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances for Application Circuit CGH27030S-AMP2 D Z Source Z Load G S Frequency (MHz) Z Source Z Load 2300 1.7 - j0.5 7.7 + j7.7 2500 2.2 - j0.2 8.0 + j6.8 2700 1.5 - j0.1 6.6 + j6.3 Note : VDD = 28 V, IDQ = 0.20 A in the DFN package. Note2: Impedances are extracted from the CGH27030S-AMP2 application circuit and are not source and load pull data derived from the transistor. 1 CGH27030S-AMP2 Application Circuit Bill of Materials Designator R1, R2 Description Qty RES, 22.6, OHM, +/-1%, 1/16W, 0603 2 C1 CAP, 3.3 pF, ±0.1 pF, 0603, ATC 1 C2 CAP, 0.9 pF, ±0.1 pF, 0603, ATC 1 C3 CAP, 1.2 pF, ±0.1 pF, 0603, ATC 1 C4 CAP, 1.5 pF, ±0.1 pF, 0603, ATC 1 C5, C9 CAP, 8.2 pF, ±0.25 pF, 0603, ATC 2 C6, C10 CAP, 470 pF, 5%, 100 V, 0603, X 2 C7, C11 CAP, 33000 pF, 0805, 100 V, X7R 2 C12 CAP, 1.0 UF, 100 V, 10%, X7R, 1210 1 C8 CAP, 10 UF 16 V TANTALUM 1 C14 CAP, 27 pF, ±5%, 0603, ATC 1 C13 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST 1 CGH27030S, QFN 2 J1, J2 Q1 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27030S-AMP2 Application Circuit, 28 V, 2.3-2.7 GHz CGH27030S-AMP2 Application Circuit Schematic, 28 V, 2.3-2.7 GHz Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH27030S-AMP2 Application Circuit, 28 V, 2.3-2.7 GHz CGH27030S Power Dissipation De-rating Curve Figure 7. - CGH27030S Transient Power Dissipation De-Rating Curve CGH27030S Power Dissipation De-Rating Curve 25 Power Dissipation (W) 20 Note 1 15 Pdiss 10 5 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Temperature ( C) Note 1. Area exceeds Maximum Case Temperature (See Page 2) Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH27030S (Package 3 x 4 DFN) Pin Input/Output 1 GND 2 RF IN 3 RF IN 4 RF IN 5 RF IN 6 GND 7 GND 8 RF OUT 9 RF OUT 10 RF OUT 11 RF OUT 12 GND Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGH27030S Package Power Output (W) Upper Frequency (GHz) Cree GaN HEMT Parameter Upper Frequency 1 Power Output Package Value Units 2.7 GHz 30 W Surface Mount - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH27030S GaN HEMT Each CGH27030S-AMP1 Test board without GaN HEMT Each CGH27030S-AMP2 Test board with GaN HEMT installed Each CGH27030S-TR Delivered in Tape and Reel 250 parts / reel Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGH27030S Rev 2.0 Preliminary Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.313.5639 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 16 CGH27030S Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf