Green Product STU/D417S S a mHop Microelectronics C orp. Ver 1.3 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Typ ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 14 @ VGS=-10V -40V Suface Mount Package. -43A 23 @ VGS=-4.5V G D G S STU SERIES TO-252AA (D-PAK) S STD SERIES TO-251 (I-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range ±20 V -43 V A TC=70°C -34.4 A -130 A d PD Units TC=25°C b -Pulsed Sigle Pulse Avalanche Energy Limit -40 225 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. °C/W Jan,26,2015 1 www.samhop.com.tw STU/D417S Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -40 Typ VDS=-32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-21.5A -1.7 -2 Max Units V uA 1 ±100 nA -3 V VGS=-4.5V , ID=-16.8A 23 m ohm m ohm VDS=-10V , ID=-21.5A 44 S VDS=-20V,VGS=0V f=1.0MHz 2620 360 265 pF pF pF VDD=-20V ID=-1.0A VGS=-10V RGEN= 6 ohm 51 91 325 112 ns ns ns ns 65 nC 14 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge c VDS=-20V,ID=-21.5A,VGS=-10V Gate-Drain Charge VDS=-20V,ID=-21.5A,VGS=-4.5V 31 nC VDS=-20V,ID=-21.5A, VGS=-10V 6.2 19 nC nC VGS=0V,IS= -5A -0.8 DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ _ 2%. b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13) Jan,26,2015 2 www.samhop.com.tw STU/D417S Ver 1.3 70 35 V G S =-5V V G S =-4.5V 56 -I D, Drain Current(A) -ID, Drain Current(A) V G S =-10V V G S =-4V 42 28 V G S =-3.5V 14 V G S =-3V 28 21 T j=125 C 14 0 0 0 1.0 0.5 2.0 1.5 2.5 3.0 0 -VDS, Drain-to-Source Voltage(V) 25 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 V G S =4.5V 15 V G S =10V 5 2.7 3.6 4.5 5.4 V G S =-10V I D =-21.5A 1.3 1.2 1.1 V G S =-4.5V I D =-16.8A 1.0 0 1 1 28 14 42 56 0 70 25 50 75 100 150 125 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.8 Figure 2. Transfer Characteristics 30 10 0.9 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 20 -55 C 25 C 7 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,26,2015 3 www.samhop.com.tw STU/D417S Ver 1.3 60 36 -Is, Source-drain current(A) I D =-21.5A RDS(on)(m Ω) 30 24 125 C 18 75 C 12 25 C 6 0 0 2 4 6 8 125 C 10 75 C 25 C 1 10 0 -VGS, Gate-to-Source Voltage(V) 0.6 0.9 1.2 1.5 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 3600 3000 C, Capacitance(pF) 0.3 C is s 2400 1800 1200 Cos s 600 C rs s 0 0 5 10 15 20 25 30 V DS = -20V I D =-21.5A 8 6 4 2 0 0 -VDS, Drain-to-Source Voltage(V) 10 20 30 40 50 60 70 80 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 TD(off ) 100 -ID, Drain Current(A) Switching Time(ns) Tf 100 60 Tr TD(on) 10 1 VDS=-20V,ID=-1A VGS=-10V 1 10 R Rg, Gate Resistance(Ω) L im it 1 10 1m 10 10 0.1 0.1 100 ( DS ) ON DC 0u s s ms VGS=-10V Single Pulse TA=25 C 1 10 100 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jan,26,2015 4 www.samhop.com.tw STU/D417S Ver 1.3 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R ɞJ A (t)=r (t) * R ɞJ A R ɞJ A =S ee Datas heet T J M-T A = P DM* R ɞJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jan,26,2015 5 www.samhop.com.tw STU/D417S Ver 1.3 PACKAGE OUTLINE DIMENSIONS TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Jan,26,2015 6 www.samhop.com.tw STU/D417S Ver 1.3 TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 0.760 4.950 1.140 5.460 0.450 0.550 H b b2 b3 b4 e A c c2 D1 E1 2.286 BSC 2.390 2.180 0.400 0.400 0.610 0.610 5.100 4.318 Jan,26,2015 7 www.samhop.com.tw STU/D417S Ver 1.3 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jan,26,2015 8 www.samhop.com.tw SDU/D417S Ver 1.3 TOP MARKING DEFINITION TO-252 SamHop Logo STU417S XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jan,26,2015 9 www.samhop.com.tw STU/D417S Ver 1.3 TOP MARKING DEFINITION TO-251 SamHop Logo STD417S XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jan,26,2015 10 www.samhop.com.tw