Green Product STU/D660 SamHop Microelectronics Corp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY VDSS 80V RDS(ON) (mΩ) Max ID Rugged and reliable. 620 @VGS=10V TO-252 and TO-251 Package. 800 @VGS=4.5V ESD Protected. 3A D G G D S STU SERIES TO-252AA(D-PAK) G S STD SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 80 V Gate-Source Voltage ±20 V 3 A 2.4 A 8.8 A 4 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Drain Current-Continuous -Pulsed c ac EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG TC=25°C TC=70°C d Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Jan,08,2015 1 www.samhop.com.tw STU/D660 Ver 2.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=64V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 80 1 Units V 1 uA ±10 uA 1.9 3 V VGS=10V , ID=1.5A 550 620 m ohm VGS=4.5V , ID=1.3A 630 800 m ohm VDS=10V , ID=1.5A 3 S VDS=25V,VGS=0V f=1.0MHz 137 19 12 pF pF pF 14 13.5 ns ns 121 ns 32 ns b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time b VDD=40V ID=1A VGS=10V RGEN= 6 ohm tf Qg Fall Time Total Gate Charge VDS=40V,ID=1.5A,VGS=10V 2.73 nC Qgs Gate-Source Charge 0.68 nC Qgd Gate-Drain Charge VDS=40V,ID=1.5A, VGS=10V 1.05 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=0.5A 0.83 1.3 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz. Jan,08,2015 2 www.samhop.com.tw STU/D660 Ver 2.1 3.5 3.5 VGS=5V ID, Drain Current(A) ID, Drain Current(A) VGS=10V 2.8 VGS=4.5V 2.1 VGS=4V 1.4 VGS=3.5V 0.7 2.8 Tj=125 C 2.1 1.4 -55 C 25 C 0.7 VGS=3V 0 0 3 2 1 4 0 6 5 2.7 3.6 4.5 5.4 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1800 2.2 1500 2.0 1200 900 VGS=4.5V 600 VGS=10V 300 VGS=10V ID=1.5A 1.8 1.6 1.4 1.2 VGS=4.5V ID=1.3A 1.0 0 0 0.7 1 1.4 2.1 2.8 3.5 0 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 50 75 100 125 150 Tj(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 1.2 25 Tj, Junction Temperature(°C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 1.8 0.9 VDS, Drain-to-Source Voltage(V) RDS(on), On-Resistance Normalized RDS(on)(mΩ) 0 100 125 150 Tj, Junction Temperature(°C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,08,2015 3 www.samhop.com.tw STU/D660 Ver 2.1 5 1800 Is, Source-drain current(A) ID=1.5A RDS(on)(m Ω ) 1500 1200 125 C 900 75 C 600 25 C 300 125 C 75 C 1 0 4 2 0 6 8 0 10 VGS, Gate to Source Voltage(V) 180 150 Ciss 120 90 60 Coss Crss 0 0 5 10 15 20 25 0.6 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 30 0.3 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) C, Capacitance(pF) 25 C 10 VDS=40V ID=1.5A 8 6 4 2 0 30 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 3.2 300 10 Switching Time(ns) ID, Drain Current(A) TD(off ) 100 Tf Tr TD(on) 10 RD 1 0.1 O S( L N) im it 1m 10 m DC s s VGS=10V Single Pulse TC=25 C VDS=40V,ID=1A VGS=10V 1 1 10 100 0.1 1 10 100 Rg, Gate Resistance( Ω ) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jan,08,2015 4 www.samhop.com.tw STU/D660 Ver 2.1 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jan,08,2015 5 www.samhop.com.tw STU/D660 Ver 2.1 TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Jan,08,2015 6 www.samhop.com.tw STU/D660 Ver 2.1 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 1.140 b3 0.760 4.950 5.460 b4 0.450 0.550 e 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 H b b2 A c c2 D1 E1 5.100 4.318 Jan,08,2015 7 www.samhop.com.tw STU/D660 Ver 2.1 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Jan,08,2015 8 www.samhop.com.tw STU/D660 Ver 2.1 TOP MARKING DEFINITION TO-252 SamHop Logo STU660 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jan,08,2015 9 www.samhop.com.tw STU/D660 Ver 2.1 TOP MARKING DEFINITION TO-251 SamHop Logo STD600 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Jan,08,2015 10 www.samhop.com.tw