STU45N01 STD45N01

Green
Product
STU45N01
STD45N01
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
100V
40A
18 @ VGS=10V
Rugged and reliable.
TO-252 and TO-251 Package.
G
D
G
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
40
A
33.5
A
IDM
EAS
-Pulsed
TC=25°C
TC=70°C
a e
b
d
117
A
306
mJ
TC=25°C
60
W
TC=70°C
42
W
-55 to 175
°C
Thermal Resistance, Junction-to-Case
2.5
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS , ID=250uA
1
Typ
Max
Units
1
V
uA
±100
nA
2
3
V
Drain-Source On-State Resistance
VGS=10V , ID=20A
18
23
m ohm
Forward Transconductance
VDS=10V , ID=20A
17
S
2560
pF
pF
pF
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=25V,VGS=0V
f=1.0MHz
247
180
c
ns
ns
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
54
40
ns
VDS=50V,ID=20A,VGS=10V
32
nC
4
nC
16
nC
VDS=50V,ID=20A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=6A
73
78
0.78
ns
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
30
100
80
ID, Drain Current(A)
ID, Drain Current(A)
VGS=10V
VGS=8V
60
VGS=7V
40
VGS=6V
20
24
18
12
Tj=125 C
-55 C
6
25 C
VGS=5V
0
0
1.5
1
0.5
2
2.5
3
0
2.4
3.6
4.8
7.2
6.0
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
60
2.0
50
1.8
40
30
V G S =10V
20
10
V G S =10V
I D =20A
1.6
1.4
1.2
1.0
0
1
1
20
40
60
80
0
100
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
20
90
Is, Source-drain current(A)
I D =20A
75
RDS(on)(m Ω)
60
125 C
45
30
75 C
15
0
25 C
0
2
6
4
8
125 C
10
25 C
75 C
1
10
C, Capacitance(pF)
V GS, Gate to Source Voltage(V)
3600
Ciss
2400
1800
Coss
1200
600
Crss
15
10
20
25
1.00
1.25
10
VDS=50V
ID=20A
8
6
4
2
0
0
5
0.75
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
0
0.50
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
3000
0.25
0
30
0
5
10
15
20
25
30
35
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
40
I D, Drain Current(A)
TD(off )
Tr
100
TD(on)
Tf
R
10
100
L im
it
10
1m
10
0.3
0.1
10
D
S(
)
ON
10
1
VDS=50V,ID=1A
VGS=10V
1
100
m
DC
Switching Time(ns)
1000
10
0u
us
s
s
s
VGS=10V
Single Pulse
TC=25 C
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13a.
Figure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
TO-251
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L5
L4
L
b
e
SYMBOL
b4
c
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
E
6.400
6.731
0.252
0.265
L
3.980
4.280
0.157
0.169
L4
0.698 REF
0.027 REF
0.038
0.236
0.048
0.245
0.435
0.450
0.880
0.025
0.035
1.140
5.460
0.030
0.205
0.045
0.215
0.550
0.018
0.022
L5
0.972
1.226
D
6.000
11.050
6.223
11.450
0.640
0.770
5.210
0.450
H
b
b2
b3
b4
e
A
c
c2
D1
E1
2.286 BSC
2.380
2.200
0.400
0.600
0.400
0.600
5.100
4.400
0.090 BSC
0.087
0.094
0.016
0.016
0.201
0.173
0.024
0.024
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Aug,05,2013
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STU45N01
STD45N01
Ver 1.0
TOP MARKING DEFINITION
TO-252
SamHop Logo
STU45N01
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Aug,05,2013
9
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STU45N01
STD45N01
Ver 1.0
TOP MARKING DEFINITION
TO-251
SamHop Logo
STD45N01
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Aug,05,2013
10
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