STU/D456A

Green
Product
STU/D456A
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
23 @ VGS=10V
40V
TO-252 and TO-251 Package.
30A
36 @ VGS=4.5V
G
D
G
S
S
STD SERIES
TO-251S(I-PAK)
STU SERIES
TO-252AA(D-PAK)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
40
V
Gate-Source Voltage
±20
V
30
A
24
A
88
A
30
mJ
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
3
°C/W
50
°C/W
Drain Current-Continuous
-Pulsed
TC=25°C
TC=70°C
a
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Nov,17,2014
1
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STU/D456A
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=32V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Min
Typ
Max
40
Units
V
1
uA
±100
nA
18.5
3
23
V
m ohm
VGS=4.5V , ID=12A
26.5
36
m ohm
VDS=10V , ID=15A
32
S
VDS=20V,VGS=0V
f=1.0MHz
540
87
70
pF
pF
pF
12
12.5
ns
ns
18.5
ns
17
ns
VDS=20V,ID=15A,VGS=10V
11.5
nC
VDS=20V,ID=15A,VGS=4.5V
6
nC
1.5
nC
3.8
nC
VDS=VGS , ID=250uA
VGS=10V , ID=15A
1
1.9
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=20V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.785
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
Nov,17,2014
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STU/D456A
Ver 1.1
30
30
VGS=4.5V
I D, Drain Current(A)
ID, Drain Current(A)
VGS=4V
24
VGS=10V
18
VGS=3.5V
12
6
24
18
Tj=125 C
12
-55 C
25 C
6
VGS=3V
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
2.4
3.2
4.8
4.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
50
1.8
40
V G S =4.5V
30
20
V G S =10V
V G S =10V
I D =15A
1.6
1.4
1.2
V G S =4.5V
I D =12A
1.0
10
6
1
12
18
24
0
30
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
V GS, Gate-to-Source Voltage(V)
60
1
0.8
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,17,2014
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STU/D456A
Ver 1.1
60
90
Is, Source-drain current(A)
I D =15A
75
45
125 C
30
15
0
75 C
0
2
25 C
4
6
8
75 C
1
0
0.3
0.6
0.9
1.2
1.5
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
600
Ciss
500
C, Capacitance(pF)
25 C
125 C
10
10
V GS, Gate to Source Voltage(V)
RDS(on)(m Ω)
60
400
300
200
Coss
Crss
100
10
VDS=20V
ID=15A
8
6
4
2
0
0
0
5
10
15
20
25
30
0
2
4
8
6
10
14 16
12
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
100
TD(off )
I D, Drain Current(A)
Switching Time(ns)
100
Tf
Tr
TD(on)
10
0.3
0.1
1
10
100
L im
it
10
1m
10
m
DC s
10
1
VDS=20V,ID=1A
VGS=10V
1
R
(
DS
)
ON
0u
s
s
VGS=10V
Single Pulse
TA=25 C
1
10
40
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,17,2014
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STU/D456A
Ver 1.1
V ( BR )D S S
tp
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Nov,17,2014
5
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STU/D456A
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
Nov,17,2014
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STU/D456A
Ver 1.1
TO-251
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
1.140
b3
0.760
4.950
5.460
b4
0.450
0.550
e
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
H
b
b2
A
c
c2
D1
E1
5.100
4.318
Nov,17,2014
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STU/D456A
Ver 1.1
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
ӿ97
² 1.0
W
17.0
+ 1.5
- 0
T
H
K
S
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Nov,17,2014
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SDU/D456A
Ver 1.1
TOP MARKING DEFINITION
TO-252
SamHop Logo
STU456A
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Nov,17,2014
9
www.samhop.com.tw
STU/D456A
Ver 1.1
TOP MARKING DEFINITION
TO-251
SamHop Logo
STD456A
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Nov,17,2014
10
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