STU/D610S

Green
Product
STU/D610S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
60V
9.5A
240 @ VGS=10V
Rugged and reliable.
TO-252 and TO-251 Package.
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
9.5
A
7.6
A
28
A
12.3
mJ
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
3
°C/W
50
°C/W
Drain Current-Continuous
-Pulsed
TC=25°C
TC=70°C
a
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Apr,30,2010
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STU/D610S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=48V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
gFS
Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=9.5A
Min
Typ
Max
60
2
Units
V
1
uA
±100
nA
3
4
185
240
V
m ohm
VDS=10V , ID=9.5A
12.8
S
VDS=25V,VGS=0V
f=1.0MHz
348
34.5
17
pF
pF
pF
10.5
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
8.5
ns
ns
15.8
ns
4.3
ns
VDS=30V,ID=9.5A,VGS=10V
4.7
nC
VDS=30V,ID=9.5A,
VGS=10V
1.3
nC
1.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage b
VGS=0V,IS=1A
0.8
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Apr,30,2010
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STU/D610S
Ver 1.0
10
12
9.6
I D, Drain Current(A)
ID, Drain Current(A)
VGS=10V
VGS=5V
7.2
4.8
2.4
8
Tj=125 C
6
4
25 C
-55 C
2
VGS=4V
0
0
4
3
2
1
5
0
6
3
4
6
5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
300
1.8
240
180
V G S =10V
120
60
V G S =10V
I D =9.5A
1.6
1.4
1.2
1.0
2.4
1
4.8
7.2
9.6
0
12
0
ID, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
2
V GS, Gate-to-Source Voltage(V)
360
1
1
V DS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Apr,30,2010
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STU/D610S
Ver 1.0
20.0
600
Is, Source-drain current(A)
I D =9.5A
500
RDS(on)(m Ω)
400
125 C
300
200
25 C
75 C
100
0
0
2
4
6
8
25 C
75 C
0
0.3
0.6
0.9
1.2
1.5
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
125 C
1.0
500
400
Ciss
300
200
100
Coss
Crss
0
5.0
10
600
0
10.0
10
VDS=30V
ID=9.5A
8
6
4
2
0
5
10
15
20
25
30
0
1
3
2
4
5
6
7
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
100
it
L im
N)
(O
S
RD
I D, Drain Current(A)
Tf
s
Tr
ms
DC
TD(on)
10
10
1m
TD(off )
10
Switching Time(ns)
100us
1
VGS=10V
Single Pulse
TA=25 C
VDS=30V,ID=1A
VGS=10V
1
1
10
100
0.1
1
10
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Apr,30,2010
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STU/D610S
Ver 1.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Apr,30,2010
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STU/D610S
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Apr,30,2010
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STU/D610S
Ver 1.0
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Apr,30,2010
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STU/D610S
Ver 1.0
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
K
S
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Apr,30,2010
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