Green Product STM6924 S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 28 @ VGS=10V 40V Suface Mount Package. 6.8A 46 @ VGS=4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed b Single Pulse Avalanche Energy EAS TA=25°C TA=70°C a a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Limit 40 ±20 Units V V 6.8 5.4 A A A 25 18 mJ 2 W 1.28 W -55 to 150 °C 62.5 °C/W Nov,07,2008 1 www.samhop.com.tw STM6924 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Min VGS=0V , ID=250uA 40 Typ VGS=4.5V , ID=5.3A VDS=5V , ID=6.8A uA 1 ±100 nA 1.8 23 3 28 V m ohm 35 12 46 m ohm VGS= ±20V , VDS=0V 1 Units V VDS=32V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=6.8A Max S c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions 825 80 64 pF pF pF 15.5 13.5 17 18 ns ns ns ns VDS=20V,ID=6.8A,VGS=10V 13 nC VDS=20V,ID=6.8A,VGS=4.5V 6.5 nC VDS=20V,ID=6.8A, VGS=4.5V 2 3.6 nC nC VDS=20V,VGS=0V f=1.0MHz c VDD=20V ID=1A VGS=10V RGEN=3.3ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=1.7A Diode Forward Voltage b 0.78 1.7 A 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Nov,07,2008 2 www.samhop.com.tw STM6924 Ver 1.0 30 20 VGS=10V 24 I D, Drain Current(A) I D, Drain Current(A) VGS=4.5V VGS=3.5V VGS=4V 18 12 VGS=3V 6 15 10 25 C 5 Tj=125 C VGS=2.5V 0 -55 C 0 0 0.5 1 2 1.5 2.5 3 0 V DS, Drain-to-Source Voltage(V) 50 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 VGS=4.5V 30 VGS=10V 10 1 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics 60 20 1.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 40 0.8 VGS=4.5V ID=5.3A 1.3 1.2 1.1 VGS=10V ID=6.8A 1.0 0.0 1 6 12 18 24 0 30 25 50 75 100 125 150 T j ( °C ) Tj, Junction Temperature(° C ) ID, Drain Current(A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,07,2008 3 www.samhop.com.tw STM6924 Ver 1.0 20.0 72 Is, Source-drain current(A) ID=6.8A R DS(on)(m Ω) 60 48 75 C 36 125 C 25 C 24 12 0 0 2 4 6 8 125 C 75 C 0.2 0.5 0.8 1.1 1.4 1.7 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1080 Ciss 900 C, Capacitance(pF) 5.0 1.0 10 25 C 10.0 720 540 360 180 Coss Crss 0 0 5 10 15 20 25 VDS=20V ID=6.8A 8 6 4 2 0 30 0 2 4 8 6 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 I D, Drain Current(A) Switching Time(ns) 100 TD(off ) Tr Tf TD(on) 10 10 RD ON S( )L im it 10 1m 10 1 DC 10 0m 0u s s ms s VGS=10V Single Pulse TA=25 C 0.1 0.03 1 3 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 40 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Nov,07,2008 4 www.samhop.com.tw STM6924 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 P DM 0.05 t1 0.1 t2 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Nov,07,2008 5 www.samhop.com.tw STM6924 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± NotesřSO-8 package weightř0.083g Nov,07,2008 6 www.samhop.com.tw STM6924 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 H ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Nov,07,2008 7 www.samhop.com.tw