STU/D6025NL2 Green Product S a mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 6.5 @ VGS=10V 30V Suface Mount Package. 60A 9.5 @ VGS=4.5V G G D S STU SERIES TO-252AA(D-PAK) S STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Units 30 V ±20 V TC=25°C 60 A TC=70°C 48 A b PD Limit 176 A TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Oct,15,2010 1 www.samhop.com.tw STU/D6025NL2 Ver 2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 30 Typ Max 1 ±100 VDS=24V , VGS=0V VGS= ±20V , VDS=0V Units V uA nA 1.7 3 5 6.5 V m ohm VGS=4.5V , ID=20A 7 9.5 m ohm VDS=10V , ID=25A 15 S VDS=15V,VGS=0V f=1.0MHz 1080 385 240 pF pF pF 18 ns VDS=VGS , ID=250uA VGS=10V , ID=25A 1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr tD(OFF) Rise Time Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=15V ID=1A VGS=10V RGEN=6 ohm 40 ns 62 ns 42 ns VDS=15V,ID=25A,VGS=10V 23.5 nC VDS=15V,ID=25A,VGS=4.5V 12.5 nC 2 nC 7 nC VDS=15V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=20A 0.86 20 1.3 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Oct,15,2010 2 www.samhop.com.tw STU/D6025NL2 Ver 2.0 120 60 VGS=4V 96 ID, Drain Current(A) ID, Drain Current(A) VGS=10V VGS=3.5V 72 48 VGS=3V 24 VGS=2.5V 48 36 Tj=125 C 24 25 C 12 -55 C 0 0 0 1.5 1 0.5 2.5 2 2.8 3.5 4.2 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.8 R DS(on), On-Resistance Normalized VG S =4.5V RDS(on)(m Ω) 2.1 V GS, Gate-to-Source Voltage(V) 15 8 6 VG S =10V 4 2 1.6 V G S =10V I D = 25A 1.4 1.2 V G S =4.5V I D =20 A 1.0 0.8 1 24 48 72 96 120 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.4 V DS, Drain-to-Source Voltage(V) 12 0 0.7 3 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Oct,15,2010 3 www.samhop.com.tw STU/D6025NL2 Ver 2.0 20.0 15.0 Is, Source-drain current(A) I D =25A 12.5 RDS(on)(m Ω) 10.0 125 C 7.5 75 C 5.0 25 C 2.5 0 0 2 4 6 8 75 C 25 C 0.2 0 0.4 0.6 0.8 1.0 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 1250 C, Capacitance(pF) 5.0 1.0 10 1500 Ciss 1000 750 Coss 500 Crss 250 10 V DS = 15V I D =25A 8 6 4 2 0 0 0 5 10 15 20 25 0 30 4 8 12 16 20 24 28 32 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 700 I D, Drain Current(A) Switching Time(ns) 125 C 10.0 Tf 100 60 T D(off) Tr T D(on) 10 VDS=15V,ID=1A VGS=10V 1 1 6 10 100 R N) L im it 0.1 10 1m 10 m DC s 10 1 60 100 300 600 (O DS 0u s s V G S =10V S ingle P ulse T A =25 C 1 10 30 50 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,15,2010 4 www.samhop.com.tw STU/D6025NL2 Ver 2.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Oct,15,2010 5 www.samhop.com.tw STU/D6025NL2 Ver 2.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Oct,15,2010 6 www.samhop.com.tw STU/D6025NL2 Ver 2.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Oct,15,2010 7 www.samhop.com.tw STU/D6025NL2 Ver 2.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Oct,15,2010 8 www.samhop.com.tw