Green Product STU/D438A S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 9 @ VGS=10V 40V TO-252 and TO251 Package. 47A 11 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range ±20 V 47 V A TC=70°C 38 A 138 A d PD Units TC=25°C b -Pulsed Sigle Pulse Avalanche Energy Limit 40 169 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. °C/W Mar,15,2010 1 www.samhop.com.tw STU/D438A Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge VSD Diode Forward Voltage Conditions Min VGS=0V , ID=250uA 40 Typ VGS= ±20V , VDS=0V VGS=4.5V , ID=21A VDS=10V , ID=24A 1 Units 1 ±100 uA V VDS=32V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=24A Max 1.6 7 8.5 70 3 nA 9 V m ohm 11 m ohm S 1460 245 175 pF pF pF VDD=20V ID=1A VGS=10V RGEN=6 ohm 24 30 67 25 ns ns ns ns VDS=20V,ID=24A,VGS=10V 25 nC VDS=20V,ID=24A,VGS=4.5V 12.5 2.5 7 nC VDS=20V,ID=24A, VGS=10V VGS=0V,IS=20A 0.8 VDS=20V,VGS=0V f=1.0MHz Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS nC nC 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Mar,15,2010 2 www.samhop.com.tw STU/D438A Ver 1.0 35 120 V G S = 4.5V V G S = 10V V G S =4 V I D, Drain Current(A) I D, Drain Current(A) 96 72 V G S = 3.5V 48 24 V G S =3 V 28 T j =125 C 21 14 7 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 V DS, Drain-to-Source Voltage(V) 20 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 16 V G S = 4.5V 8 V G S = 10V 4 24 1 48 72 96 2.1 2.8 3.5 4.2 V G S =10V I D = 24A 1.6 1.4 V G S =4.5 V I D =21A 1.2 1.0 0 120 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.4 Figure 2. Transfer Characteristics 24 12 0.7 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C 25 C V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Mar,15,2010 3 www.samhop.com.tw STU/D438A Ver 1.0 30 60.0 Is, Source-drain current(A) ID=24A R DS(on)(m Ω) 25 20 75 C 15 125 C 10 25 C 5 125 C 10.0 75 C 25 C 0 0 2 4 6 8 1.0 10 1.2 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 2000 1600 Ciss 1200 800 Coss 400 Crss 0 0 5 10 15 20 25 V DS =20V I D =24A 8 6 4 2 0 30 0 5 10 20 25 30 35 40 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 I D, Drain Current(A) TD(off ) Tr Tf TD(on) 10 VDS=20V,ID=1A VGS=10V 10 R 100 Rg, Gate Resistance(Ω) DS ( ) ON L im it 1 10 1m 10 m DC s 10 0.1 0.1 1 1 15 V DS, Drain-to-Source Voltage(V) 100 Switching Time(ns) 0.96 0.72 0.48 V GS, Gate-to-Source Voltage(V) 2400 C, Capacitance(pF) 0.24 0 0u s s VGS=10V Single Pulse TA=25 C 1 10 100 V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Mar,15,2010 4 www.samhop.com.tw STU/D438A Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Mar,15,2010 5 www.samhop.com.tw STU/D438A Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Mar,15,2010 6 www.samhop.com.tw STU/D438A Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 2 1 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Mar,15,2010 7 www.samhop.com.tw STU/D438A Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Mar,15,2010 8 www.samhop.com.tw