Gre r Pro STU/D432L S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 10 @ VGS=10V 40V TO-252 and TO251 Package. 42A 15 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID Drain Current-Continuous IDM EAS Limit Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 42 A 34 A 123 A -Pulsed TC=25°C TC=70°C a b Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d 121 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Oct,12,2011 1 www.samhop.com.tw STU/D432L Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Typ VGS=4.5V , ID=17A VDS=10V , ID=21A Units 1 ±100 uA V 40 VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=21A Max 1 1.5 8 11 39 3 nA 10 V m ohm 15 m ohm S c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg VGS=0V , ID=250uA VDS=32V , VGS=0V Min VDS=20V,VGS=0V f=1.0MHz pF pF pF 1290 175 152 c 19 28 VDD=20V ID=1A VGS=10V RGEN=6 ohm 70 30 ns ns ns ns VDS=20V,ID=21A,VGS=10V 25 nC VDS=20V,ID=21A,VGS=4.5V 12.2 nC 2.1 8 nC nC VDS=20V,ID=21A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V,IS=2A 0.76 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Oct,12,2011 2 www.samhop.com.tw STU/D432L Ver 1.0 35 100 V GS= 6 V V GS= 1 0 V ID, Drain Current(A) ID, Drain Current(A) V GS= 5 V 80 V GS= 4 . 5 V V GS= 4 V 60 40 V GS= 3 . 5 V 20 28 21 Tj=125 C -55 C 14 25 C 7 V GS= 3 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 V DS, Drain-to-Source Voltage(V) 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics 40 R DS(on), On-Resistance Normalized 2.0 32 R DS(on)(m Ω) 1.6 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 24 V GS= 4 . 5 V 16 8 1 0.8 V GS= 1 0 V 20 1 40 60 80 1.8 1.4 1.2 VGS=4.5V ID=17A 1.0 0 100 VGS=10V ID=21A 1.6 0 50 25 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Oct,12,2011 3 www.samhop.com.tw STU/D432L Ver 1.0 30 20.0 Is, Source-drain current(A) ID=21A RDS(on)(m Ω) 25 20 125 C 15 75 C 25 C 10 5 0 0 2 4 6 8 10.0 75 C 1.0 10 0 25 C 0.48 0.24 1.2 0.96 0.72 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1800 1500 C, Capacitance(pF) 125 C 5.0 Ciss 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 30 VDS=20V ID=21A 8 6 4 2 0 0 8 4 12 16 20 24 28 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 32 100 I D, Drain Current(A) Switching Time(ns) 500 TD(off) Tf Tr TD(on) 10 R 0.3 0.1 1 10 100 (O DS N) Lim it 10 10 m DC s 10 1 V DS =20V,I D =1A V GS =10V 1 100 1m 10 0u us s s V GS =10V Single Pulse T C = 25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,12,2011 4 www.samhop.com.tw STU/D432L Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Waveforms Unclamped Inductive Test Circuit Figure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Oct,12,2011 5 www.samhop.com.tw STU/D432L Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Oct,12,2011 6 www.samhop.com.tw STU/D432L Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS INCHES MIN MAX 2.100 2.500 0.000 0.200 0.889 0.400 0.770 1.140 5.460 4.800 0.400 0.600 6.223 5.300 4.900 5.515 6.300 6.731 4.320 5.004 2.290 REF 8.900 10.400 1.780 1.397 2.743 REF. 0.508 REF. 0.890 1.700 1.100 0.500 ° 10° 0 15° 0° MIN MAX 0.083 0.098 0.008 0.000 0.035 0.016 0.030 0.045 0.189 0.215 0.024 0.016 0.245 0.209 0.193 0.217 0.265 0.248 0.170 0.197 0.090 BSC 0.350 0.409 0.055 0.070 0.108 REF. 0.020 REF. 0.035 0.067 0.020 0.043 10 ° 0° ° 15° 0 Oct,12,2011 7 www.samhop.com.tw STU/D432L Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Oct,12,2011 8 www.samhop.com.tw