RU30E4B N-Channel Advanced Power MOSFET Features Pin Description • 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V D • Super High Dense Cell Design • ESD protected(Rating 2KV HBM) • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23 D Applications • Load Switch G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1.1 A TA=25°C 16 A TA=25°C 4 TA=70°C 3.2 TA=25°C 1 TA=70°C 0.64 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD RθJC RθJA ③ Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 125 °C/W TBD mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 1 www.ruichips.com RU30E4B Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU30E4B Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 30 V VDS=30V, VGS=0V 1 TJ=125°C VGS(th) IGSS ⑤ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance µA 30 1 - 1.8 V ±10 µA VGS=10V, IDS=4A 30 50 mΩ VGS=4.5V, IDS=2A 55 70 mΩ 1 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 11 ns 4 nC Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.8 Ciss Input Capacitance 200 Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 20 td(ON) Turn-on Delay Time 8 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 13 ns 21 5 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=15V, IDS=1A, VGEN=10V,RG=4.7Ω pF 55 7.5 VDS=24V, VGS=10V, IDS=1A nC 1.4 2.5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 2 www.ruichips.com RU30E4B Ordering and Marking Information Device Marking① Package RU30E4B LXYWW SOT23 Packaging Quantity Reel Size Tape width Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 3 www.ruichips.com RU30E4B Typical Characteristics 4.5 4.0 1.0 ID - Drain Current (A) PD - Power (W) Drain Current Power Dissipation 1.2 0.8 0.6 0.4 0.2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VGS=10V 0.0 0 25 50 75 100 125 150 175 25 10µs 100µs 1ms 10ms 0.1 0.01 DC TA=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 1 75 100 125 150 175 Drain Current Safe Operation Area 10 50 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 150 Ids=4A 120 90 60 30 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse 0.1 RθJA=125°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 4 www.ruichips.com RU30E4B Typical Characteristics Output Characteristics 10 8 RDS(ON) - On Resistance (mΩ) 8V 10V ID - Drain Current (A) Drain-Source On Resistance 150 6V 5V 6 3V 4 2 1V 0 0 1 2 3 4 120 90 4.5V 60 10V 30 0 5 0 1 2 VDS - Drain-Source Voltage (V) 5 Source-Drain Diode Forward 10 VGS=10V IDS=1A 2.0 -IS - Source Current (A) Normalized On Resistance 4 ID - Drain Current (A) Drain-Source On Resistance 2.5 3 1.5 1.0 0.5 TJ=25°C Rds(on)=30mΩ 1 TJ=150°C TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 400 300 Ciss 200 Coss Crss 1 1 1.2 1.4 Gate Charge 500 0 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 100 0.6 10 100 10 VDS=24V IDS=1A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 2 4 6 8 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 5 www.ruichips.com RU30E4B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 6 www.ruichips.com RU30E4B Package Information SOT23 D b θ L E E1 L1 0.25 C e1 A2 A A1 e SYMBOL A A1 A2 b c D E E1 e e1 L L1 θ MM MIN 0.900 0.050 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.400 0° Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 NOM 1.025 0.075 0.975 0.400 0.115 2.900 1.300 2.400 0.950 TYP 1.900 0.540 REF 0.500 * INCH MAX 1.150 0.100 1.020 0.500 0.150 3.000 1.400 2.550 MIN 0.035 0.002 0.035 0.012 0.003 0.110 0.047 0.089 2.000 0.071 0.600 8° 0.016 0° 7 NOM 0.040 0.003 0.038 0.016 0.005 0.114 0.051 0.094 0.037 TYP 0.075 0.021 REF 0.018 * MAX 0.045 0.004 0.040 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8° www.ruichips.com RU30E4B Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 8 www.ruichips.com