Data Sheet Schottky Barrier Diode RB495D Applications General rectification. Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 2.9±0.2 各 リー ドと も Each lead 同寸 法 has same dimension Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability ＋0.1 0.15 －0.06 0.8MIN. 0.3～0.6 0～ 0.1 (2) (1) 0.95 Construction Silicon epitaxial planar 0.95 1.0MIN. ＋0.2 1.6－0.1 2.8±0.2 (3) 0.8±0.1 0.95 2.4 ＋0.1 0.4 －0.05 SMD3 1.1±0.2 0.01 1.9±0.2 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Limits 40 25 0.4 2 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg 3.2±0.1 8.0±0.2 0～0.5 3.2±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V A A °C °C (*1) Rating of per diode : lo/2 Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF 1 VF 2 Min. Typ. Max. Unit - - 0.30 0.50 V V IF=10mA IF=200mA IR1 - - 70 μA VR=25V 1/3 2012.09 - Rev.C Data Sheet RB495D 1 Ta=25℃ Ta=-25℃ 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 10 0.1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 5 10 15 20 25 30 35 1 40 0 200 360 350 340 AVE:359.0mV 330 160 140 120 100 80 60 AVE:33.62uA 40 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 20 85 80 75 70 65 60 55 0 50 AVE:71.8pF Ct DISPERSION MAP 20 30 25 90 IR DISPERSION MAP 30 15 10 5 AVE:12.50A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:8.6ns 0 0 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 1 trr DISPERSION MAP IFSM DISRESION MAP t 15 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 100 100 Per chip Rth(j-a) Rth(j-c) 100 Mounted on epoxy board 10 IM=1mA 1ms IF=10mA FORWARD POWER DISSIPATION:Pf(W) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.3 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 30 Ta=25℃ f=1MHz VR=0V n=10pcs 95 20 VF DISPERSION MAP 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ VR=25V n=30pcs 180 REVERSE CURRENT:IR(uA) Ta=25℃ IF=200mA n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 370 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 10000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ Ta=75℃ FORWARD VOLTAGE:VF(mV) 100 100000 D=1/2 0.2 Sin(θ＝180) DC 0.1 time 300us 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 2012.09 - Rev.C Data Sheet RB495D Per chip Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 0.6 D=1/2 0.4 DC Sin(θ＝180) 0.2 0 0A 0V 0.4 DC Io t T VR D=t/T VR=20V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 40 0.5 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.5 1 0A 0V Io t 0.4 DC T VR D=t/T VR=20V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 3/3 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 2012.09 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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