Data Sheet Schottky Barrier Diode RB162M-30 lExternal Dimensions(Unit : mm) lApplications General rectification lLand Size Figure(Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 3.5±0.2 2.6±0.1 3.05 lFeatures 1)Small power mold type.(PMDU) 2)High reliability PMDU lConstruction Silicon epitaxial lStructure 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lTaping Dimensions(Unit : mm) 4.0±0.1 1.81±0.1 8.0±0.2 3.71±0.1 0.25±0.05 1.75±0.1 φ 1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 φ 1.0±0.1 1.5MAX lAbsolute Maximum Ratings(Ta=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 30 V Reverse voltage (DC) VR 30 V Average rectified forward current (*1) Io 1 A IFSM 30 A Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Forward current surge peak (60Hz・1cyc) (*1)Mounting on epoxi board. 180°Half sine wave lElectrical Characteristics(Ta=25°C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage VF1 - 0.44 0.52 V IF=1.0A Reverse current IR - 10 100 mA VR=30V www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 2012.08 - Rev.A Data Sheet RB162M-30 10000 1 Ta = 150°C 1000 REVERSE CURRENT:IR(mA) FORWARD CURRENT:IF(A) Ta = 150°C Ta = 125°C 0.1 Ta = 75°C 0.01 Ta = 25°C 100 Ta = 125°C 10 Ta = 75°C 1 Ta = 25°C 0.1 Ta = -25°C Ta = -25°C 0.001 0 100 200 300 400 0.01 500 1000 0 5 10 15 20 30 550 f = 1MHz Ta=25°C VF=1A n=30pcs FORWARD VOLTAGE:VF(mV) 525 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 25 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 100 500 475 AVE : 439.2mV 450 425 10 0 5 10 15 20 25 400 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 30 350 Ta=25°C VR=30V n=30pcs 20 15 AVE : 6.1mA 10 300 275 AVE : 237pF 250 5 225 0 200 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta=25°C f=1MHz VR=0V n=10pcs 325 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(mA) 25 2/4 2012.08 - Rev.A 30 IFSM RESERVE RECOVERY TIME:trr(ns) 150 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet RB162M-30 8.3ms 125 1cyc. 100 AVE : 73.5A 75 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE : 8.4ns 10 5 0 50 IFSM DISRESION MAP trr DISPERSION MAP 1000 1000 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 1cyc. 100 10 1 10 100 10 100 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0.8 0.7 Rth(j-a) 100 0.6 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 Rth(j-c) 10 Mounted on epoxy board IM=10mA IF=1A 1 Sin(θ＝180) 0.5 D = 1/2 0.4 0.3 DC 0.2 time 0.1 0.001 time 0.1 1ms 300ms 0.1 10 0 1000 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 0 3/4 2012.08 - Rev.A 2.5 0.100 2.0 0.050 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.075 D = 1/2 DC 0.025 0.000 Data Sheet RB162M-30 10 20 1.5 Sin(θ = 180) DC 1.5 D=t/T VR=15V Tj=150°C D = 1/2 1 Sin(θ = 180) 0.5 0 25 50 75 100 125 150 No Break at 30kV VR T 0 30 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2 D = 1/2 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) Io t D=t/T VR=15V Tj=150°C 1.0 0.0 30 0A 0V t T REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2.5 Io VR 0.5 Sin(θ = 180) 0 DC 0A 0V 20 15 10 AVE : 4.4kV 5 0 25 50 75 100 125 0 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 4/4 2012.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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