RQ5E030AJ Nch 30V 3A Middle Power MOSFET Datasheet l Outline VDSS 30V RDS(on)(Max.) ID PD 75mΩ TSMT3 SC-96 1W SOT-346T l Inner circuit l Features 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant l Packaging specifications Embossed Tape 180 Packing Reel size (mm) l Application Type Switching Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code Marking TL HW l Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature Symbol Value Unit VDSS ID*1 30 V ID,pulse*2 VGSS EAS*3 IAS*3 PD*4 Tj ±6.0 ±12 0.69 3.0 1 150 -55 to +150 A V mJ A W Tstg ℃ ℃ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Thermal resistance Parameter Symbol RthJA*4 Thermal resistance, junction - ambient Values Min. Typ. Max. - - 125 Unit ℃/W l Electrical characteristics (T a = 25°C) Parameter Symbol Drain - Source breakdown voltage Breakdown voltage temperature coefficient Conditions V(BR)DSS VGS = 0V, ID = 1mA ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃ Values Unit Min. Typ. Max. 30 - - V - 18 - mV/℃ Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V - - 1 μA Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V - - ±100 nA VGS(th) VDS = VGS, ID = 1mA 0.5 - 1.5 V - -18 - mV/℃ VGS = 4.5V, ID = 3.0A - 57 75 VGS = 2.5V, ID = 1.5A - 79 103 f = , open drain - 3.3 - Ω 2.7 - - S Gate threshold voltage Gate threshold voltage temperature coefficient ΔVGS(th) ID = 1mA ΔTj referenced to 25℃ Static drain - source on - state resistance RDS(on)*5 Gate input resistance RG Forward Transfer Admittance |Yfs| *5 VDS = 5V, ID = 3A mΩ *1 Limited only by maximum temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L ⋍ 100μH, V DD = 15V, RG = 25Ω, STARTING Tch = 25℃ Fig.3-1,3-2 *4 Mounted on a ceramic boad (30×30×0.8mm) *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Min. Typ. Max. Input capacitance Ciss VGS = 0V - 245 - Output capacitance Coss VDS = 10V - 30 - Reverse transfer capacitance Crss f = 1MHz - 20 - VDD ⋍ 15V,VGS = 4.5V - 5.0 - tr*5 ID = 1.5A - 5.0 - td(off)*5 RL ⋍ 10Ω - 12 - tf*5 RG = 10Ω - 3.5 - Turn - on delay time Rise time Turn - off delay time Fall time td(on)*5 Unit pF ns l Gate charge characteristics (Ta = 25°C) Parameter Symbol Total gate charge Qg*5 Gate - Source charge Qgs*5 Gate - Drain charge Qgd*5 Values Conditions VGS = 10V VDD ⋍ 15V ID = 3.0A VGS = 4.5V Min. Typ. Max. - 4.5 - - 2.2 - - 0.6 - - 0.5 - Unit nC l Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous forward current IS*1 Body diode pulse current Forward voltage ISP*2 Conditions Unit Min. Typ. Max. - - 0.8 A - - 6.0 A - - 1.2 V Ta = 25℃ VSD*5 VGS = 0V, IS = 0.8A www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Values 3/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristic curves Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristic curves Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Electrical characteristic curves Fig.17 Typical Capacitance vs. Drain Source Voltage Fig.18 Switching Characteristics Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain Voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT Fig.3-2 AVALANCHE WAVEFORM www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.002 RQ5E030AJ Datasheet l Dimensions www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.002