Data Sheet 10V Drive Nch MOSFET RCX050N25 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 12.0 2.8 0.8 2.54 2.54 2.6 0.75 (1) (2) (3) Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RCX050N25 Inner circuit Bulk 500 ∗1 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous VGSS ID *3 IDP *1,3 IS Pulsed ISP IAS *1 *2 Power dissipation EAS PD Channel temperature Range of storage temperature Tch Tstg Avalanche current Avalanche energy *2 *4 (1) Gate (2) Drain (3) Source Limits Unit 250 30 5 V V A 20 5 20 A A A 2.5 1.82 30 A mJ W 150 55 to 150 C C Limits 4.16 Unit C / W (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, T ch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case Symbol Rth (ch-c)* * T C=25°C * Limited only by maximum channel temperature allowed. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet RCX050N25 Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 250 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 10 A VDS=250V, VGS=0V VGS (th) 3.5 - 5.5 V VDS=10V, ID=1mA RDS (on)* - 850 1100 l Yfs l* 1.2 - - S VDS=10V, ID=2.5A Input capacitance Ciss - 410 - pF VDS=25V Output capacitance Coss - 30 - pF VGS=0V Reverse transfer capacitance Crss - 15 - pF f=1MHz Turn-on delay time td(on) * tr * - 17 - ns VDD 125V, ID=2.5A - 18 - ns VGS=10V td(off) * tf * - 20 - ns RL=50 - 12 - ns RG=10 Qg * Qgs * Qgd * - 9.0 - nC VDD 125V, ID=5A - 3.5 3.5 - nC nC VGS=10V RL=25, RG=10 Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge m ID=2.5A, VGS=10V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions Is=5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet RCX050N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 2 5 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V 4 Drain Current : ID [A] Drain Current : ID [A] 1.5 VGS=10.0V VGS=8.0V 1 3 VGS=8.0V 2 VGS=7.0V 0.5 1 0 VGS=7.0V 0 0 0.2 0.4 0.6 0.8 1 0 6 8 10 Fig.3 Typical Transfer Characteristics Fig.4 Gate Threshold Voltage vs. Channel Temperature 10 VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] VDS=10V pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 8 6 4 2 0 0.001 0 2 4 6 8 -50 10 -25 Gate-Source Voltage : VGS [V] 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 4000 10000 VGS=10V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C VGS=10V pulsed 3500 Static Drain-Source On-State Resistance RDS(on) [mW] Static Drain-Source On-State Resistance RDS(on) [mW] 4 Drain-Source Voltage : VDS [V] 10 Drain Current : ID [A] 2 Drain-Source Voltage : VDS [V] 1000 ID=5.0A 3000 2500 2000 1500 ID=2.5A 1000 500 100 0.01 0 0.1 1 10 -50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Drain Current : ID [A] 3/6 2011.10 - Rev.A Data Sheet RCX050N25 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage 100 10 VGS=0V pulsed 10 Source Current : IS [A] Forward Transfer Admittance |Yfs| [S] VDS=10V pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.01 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.01 0.1 1 10 0.0 0.5 Drain Current : ID [A] 1.0 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics 3000 10000 VDD≒125V VGS=10V RG=10Ω Ta=25°C Pulsed 2500 ID=2.5A 1000 2000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C Pulsed ID=5.0A 1500 1000 tf td(off) 100 td(on) 10 tr 500 0 1 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 1 10 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 1000 15 Ta=25°C VDD=125V ID=5A Pulsed Ciss Capacitance : C [pF] Gate-Source Voltage : VGS [V] 1.5 Source-Drain Voltage : VSD [V] 10 100 Coss 10 5 Crss Ta=25°C f=1MHz VGS=0V 1 0 0 5 10 15 0.01 20 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] Total Gate Charge : Qg [nC] 4/6 2011.10 - Rev.A Data Sheet RCX050N25 Fig.13 Reverse Recovery Time vs. Source Current Fig.14 Maximum Safe Operating Area 100 1000 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25°C Single Pulse 10 Drain Current : ID [ A ] Reverse Recovery Time : trr [ns] Ta=25°C Vgs=0V di/dt=100A/us Pulsed 100 1 PW = 100μs PW = 1ms 0.1 PW = 10ms 0.01 10 0 1 0.1 10 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Source Current : IS [A] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse 1 0.1 0.01 Rth(ch-a)=61.4°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet RCX050N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A