STT3808NE 6A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free Key Features: TSOP-6 Low rDS(on) trench technology Low thermal impedance Fast switching speed A E L 6 5 4 Typical Applications: B Battery Powered Instruments Portable Computing Mobile Phones Fast switch GPS Units and Media Players 1 2 3 F C REF. Package MPQ Leader Size TSOP-6 3K 7 inch J K DG PACKAGE INFORMATION H A B C D E F ESD Protection Diode 2KV Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. G1 D1 S2 S2 G2 D2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current TA= 25°C 1 6 ID TA= 100°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 TA= 25°C 1 IDM 22 A IS 1 A 0.83 PD TA= 100°C Operating Junction and Storage Temperature Range A 3.6 W 0.3 TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Maximum Junction to Ambient t≦10 sec 1 Steady State RθJA 110 °C / W 150 Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 18-Oct-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 STT3808NE 6A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit VGS(th) 0.4 - - V VDS=VGS, ID=250µA Gate-Body Leakage IGSS - - ±10 nA VDS=0, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - 1 - - 30 10 - - - - 20 - - 28 Gate- Source Threshold Voltage On-State Drain Current Drain-Source On-Resistance ID(on) RDS(ON) µA Test Conditions VDS=16V, VGS=0 V VDS=16V, VGS=0 V, TJ= 85°C A VDS =5V, VGS=4.5V mΩ VGS=4.5V, ID=6A VGS=2.5V, ID=5A Forward Transconductance gfs - 10 - S VDS=15V, ID=6A Diode Forward Voltage VSD - 0.7 - V IS=1A, VGS=0V Dynamic Total Gate Charge Qg - 13.5 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 5.4 - Turn-on Delay Time Td(on) - 6 - Tr - 12 - Td(off) - 65 - Tf - 35 - Input Capacitance Ciss - 680 - Output Capacitance Coss - 144 - Reverse Transfer Capacitance Crss - 137 - Rise Time Turn-off Delay Time Fall Time nC VDS=10V, VGS=4.5V, ID=6A nS VDD=10V, VGEN=4.5V, RGEN=6Ω, RL=10Ω, ID=1A pF VDS = 10 V, VGS = 0 V, f = 1 MHz Notes 1. Pulse test：PW≦300µs duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 18-Oct-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 STT3808NE Elektronische Bauelemente 6A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Mos.FET Typical Electrical Characteristics http://www.SeCoSGmbH.com/ 18-Oct-2013 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 STT3808NE Elektronische Bauelemente 6A , 20V , RDS(ON) 20 mΩ Ω N-Channel Enhancement Mode Mos.FET Typical Electrical Characteristics http://www.SeCoSGmbH.com/ 18-Oct-2013 Rev. A Any changes of specification will not be informed individually. Page 4 of 4