SSG4825P -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B L D M A C N FEATURES J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H REF. A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID @ TA = 25°C -11.5 A ID @ TA = 70°C -9.3 A Continuous Drain Current 1 Pulsed Drain Current 2 IDM ±50 A Continuous Source Current (Diode Conduction) 1 IS -2.1 A PD @ TA = 25°C 3.1 W PD @ TA = 70°C 2.3 W TJ, TSTG -55 ~ 150 °C Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec RθJC 25 °C / W t ≦ 5 sec RθJA 50 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4825P -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS= 0V, ID= -250μA VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage Current IGSS - - ±100 μA VDS= 0V, VGS= ±25V Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -24V, VGS= 0V - - -5 μA VDS= -24V, VGS= 0V, TJ= 55°C -50 - - A VDS= -5V, VGS= -10V - - 13 - - 19 gfs - 29 - S VDS= -15V, ID= -11.5A VSD - -0.8 - V IS= 2.5A, VGS= 0V Gate Threshold Voltage On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 25 - Gate-Source Charge Qgs - 11 - Gate-Drain Charge Qgd - 17 - Input Capacitance Ciss - 2300 - Output Capacitance Coss - 600 - Reverse Transfer Capacitance Crss - 300 - Turn-On Delay Time Td(on) - 15 - Tr - 13 - Td(off) - 100 - Tf - 54 - Turn-Off Delay Time Fall Time VGS= -10V, ID= -11.5A VGS= -4.5V, ID= -9.3A 2 Total Gate Charge Rise Time mΩ nC ID= -11.5A VDS= -15V VGS= -5V pF VDS= -15V VGS= 0V f= 1MHz nS VDD= -15V ID= -1A VGEN= -10V RL= 6Ω Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4825P Elektronische Bauelemente -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Typical Electrical Characteristics (P-Channel) http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4825P Elektronische Bauelemente -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Typical Electrical Characteristics (P-Channel) http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4