3DD13003

RoHS
3DD13003
3DD13003
TRANSISTOR (NPN)
PCM:
1.25
W (Tamb=25℃)
1. BASE
Collector current
ICM:
1.5 A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
2. COLLECTOR
3. EMITTER
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
D
T
,. L
TO-126
FEATURES
Power dissipation
Symbol
C
123
IC
O
unless otherwise specified)
Test
N
conditions
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
O
MIN
TYP
MAX
UNIT
700
V
Ic= 10mA, IB=0
400
V
V(BR)EBO
IE= 1000µA, IC=0
9
V
ICBO
VCB= 700V, IE=0
1000
µA
ICEO
VCE= 400V, IB=0
500
µA
IEBO
VEB= 9V, IC=0
1000
µA
HFE(1)
VCE= 2V, IC= 0.5 A
8
HFE(2)
VCE= 10V, IC= 0.5 mA
5
Collector-emitter saturation voltage
VCE(sat)
IC=1000mA,IB= 250 mA
1
V
Base-emitter saturation voltage
VBE(sat)
IC=1000mA, IB= 250mA
1.2
V
Base-emitter voltage
VBE
IE= 2000 mA
3
V
Transition frequency
fT
VCE=10V, Ic=100mA
f =1MHz
Fall time
tf
IC=1A, IB1=-IB2=0.2A
0.5
µs
Storage time
ts
VCC=100V
2.5
µs
Collector cut-off current
C
E
L
Collector cut-off current
Emitter cut-off current
DC current gain
J
E
R
T
E
W
40
5
MHz
CLASSIFICATION OF HFE(1)
Rank
Range
8-10
10-15
WEJ ELECTRONIC CO.
15-20
20-25
Http:// www.wej.cn
25-30
30-35
35-40
E-mail:wej@yongerjia.com