RoHS KTB1366 TO-220F KTB1366 D T ,. L 1. BASE TRANSISTOR (PNP) 2. COLLECTOR FEATURES Power dissipation 3. EMITTER PCM: 2 W (Tamb=25℃) 123 Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Test R T V(BR)CBO N unless otherwise specified) Symbol Collector-base breakdown voltage C O conditions MIN TYP MAX UNIT Ic=-1mA, IE=0 -60 V Ic=-50mA, IB=0 -60 V IE=-1mA, IC=0 -7 V VCE(sat) IC=-2A, IB=-0.2A -1 V Base-emitter voltage C E L VBE VCE=-5V, IC=-0.5A -1 V Transition frequency fT VCE=-5V, IC=-0.5A 9 MHz Cob VCB=-10V, IE=0, f=1MHz 150 pF Fall time tf IC=-2A, IB1=-IB2=-0.2A 0.5 µs Storage time ts 1.7 µs Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Collector output capacitance W ICBO VCB=-60V, IE=0 -100 µA IEBO VEB=-7V, IC=0 -100 µA hFE(1) VCE=-5V, IC=-0.5A 60 hFE(2) VCE=-5V, IC=-3A 20 200 VCC=-30V CLASSIFICATION OF hFE(1) Rank Range O Y 60-120 100-200 Marking WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]