RoHS C2611 C 2611 TRANSISTOR (NPN) D T ,. L TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter C 1 Symbol O 2 3 unless otherwise specified) Test N conditions O TYP MAX UNIT 600 V IC= 1mA , IB=0 400 V V(BR)EBO IE= 100µA, IC=0 7 V ICBO VCB= 600V, IE=0 100 µA ICEO VCE= 400V, IB=0 200 µA IEBO VEB= 7V, IC=0 100 µA hFE(1) VCE= 20V, IC= 20mA 10 hFE(2) VCE= 10V, IC= 0.25 mA 5 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain J E R T C E L Collector cut-off current E Transition frequency fT Fall time tf Storage time tS W Ic= 100µA, IE=0 MIN VCE= 20 V, IC=20mA f = 1MHz 40 8 MHz IC=50mA, 0.3 µs 1.5 µs IB1=-IB2=5mA, VCC=45V CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 WEJ ELECTRONIC CO. 20-25 25-30 Http:// www.wej.cn 30-35 35-40 E-mail:[email protected]