D882

RoHs
D882
D
T
NPN SILICON POWER TRANSISTOR
DESCRIPTION
8.5 MAX.
3.2 ±0.2
12 TYP.
R
T
C
E
L
O
12.0 MAX.
IC
N
ABSOLUTE MAXIMUM RATINGS
C
2.5 ±0.2
3.8 ±0.2
• Low saturation voltage
VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A)
• Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
• Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
2.8 MAX.
13.0 MIN.
FEATURES
Maximum Temperature
Storage Temperature
−55 to +150°C
Junction Temperature
150°C Maximum
Maximum Power Dissipations
1.0 W
Total Power Dissipation (TA = 25°C)
10 W
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
Collector to Base Voltage
40 V
VCBO
VCEO
Collector to Emitter Voltage
30 V
VEBO
Emitter to Base Voltage
5.0 V
Collector Current (DC)
3.0 A
IC(DC)
IC(pulse)Note Collector Current (pulse)
7.0 A
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
,. L
O
PACKAGE DRAWING (Unit: mm)
The D882 is NPN silicon transistor suited for the output stage of 3
watts audio amplifier, voltage regulator, DC-DC converter and relay
driver.
0.55 +0.08
–0.05
0.8 +0.08
–0.05
1.2 TYP.
2.3 TYP.
2.3 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
E
Gain Bandwidth Product
Output Capacitance
J
E
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
Collector Saturation Voltage
Base Saturation Voltage
TEST CONDITIONS
Note
MIN.
TYP.
30
150
60
160
hFE1
VCE = 2.0 V, IC = 20 mA
hFE2
VCE = 2.0 V, IC = 1.0 A
fT
VCE = 5.0 V, IC = 0.1 A
90
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
45
ICBO
VCB = 30 V, IE = 0 A
Note
MAX.
UNIT
400
MHz
pF
IEBO
VEB = 3.0 V, IC = 0 A
1.0
µA
µA
VCE(sat)
IC = 2.0 A, IB = 0.2 A
Note
0.3
0.5
V
IC = 2.0 A, IB = 0.2 A
Note
1.0
2.0
V
VBE(sat)
1.0
Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%
W
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
60 to 120
100 to 200
160 to 320
200 to 400
Remark Test Conditions: VCE = 2.0 V, IC = 1.0 A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
WEJ ELECTRONIC CO.
Document No. D17116EJ2V0DS00 (2nd edition)
(Previous No. TC-3564)
Date Published March 2004 N CP(K)
Printed in Japan
Http:// www.wej.cn
E-mail:wej@yongerjia.com
c
2004
RoHs
D882
D
T
TYPICAL CHARACTERISTICS (TA = 25°C)
VCE = 10 V
IC = 1.0 A
PT
∆Rth
Note
N
TC = 25°C
R
T
C
E
L
IC
VCEO
Note
O
IB
VCE
hFE
VBE
VBE
50%
IC(DC)MAX.
C
hFE
IC(pulse)
IC
IC
TC
TA
IC
VCE
VCE
J
E
t)
(sa
VBE(sat)
VCE(sat)
VCE
W
E
IC
WEJ ELECTRONIC CO.
fT
VBE(sat)
VCE = 5.0 V
IE = 0 A (Cob)
IC = 0 A (Cib)
Cib
Cob
Cib
Cob
IC = 10 A • IB
,. L
O
IC
Http:// www.wej.cn
VCB
VEB
E-mail:wej@yongerjia.com