BGA2711 MMIC wideband amplifier

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BGA2711
MMIC wideband amplifier
Product specification
Supersedes data of 2001 Apr 04
2001 Oct 19
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
FEATURES
PINNING
 Internally matched to 50 
PIN
 Very wide frequency range
DESCRIPTION
1
 Very flat gain
 Unconditionally stable.
APPLICATIONS
VS
2, 5
GND2
3
RF out
4
GND1
6
RF in
 Cable systems
 LNB IF amplifiers
6
 General purpose
5
4
1
 ISM.
6
DESCRIPTION
1
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
2
Top view
3
4
3
2, 5
MAM455
Marking code: G2-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
5
6
V
IS
DC supply current
12.6

mA
insertion power gain
f = 1 GHz
13.1

dB
NF
noise figure
f = 1 GHz
4.8

dB
PL(sat)
saturated load power
f = 1 GHz
2.8

dBm
|s21
|2
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2001 Oct 19
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
VS
DC supply voltage
IS
supply current
CONDITIONS
MIN.
RF input AC coupled
Ts  80 C
MAX.
UNIT

6
V

20
mA
Ptot
total power dissipation

200
mW
Tstg
storage temperature
65
+150
C
Tj
operating junction temperature

150
C
PD
maximum drive power

10
dBm
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
300
K/W
Ptot = 200 mW; Ts  80 C
thermal resistance from junction to solder
point
CHARACTERISTICS
VS = 5 V; IS = 12.6 mA; f = 1 GHz; Tj = 25 C unless otherwise specified.
SYMBOL
CONDITIONS
supply current
IS
|s21
PARAMETER
|2
insertion power gain
MIN.
TYP.
MAX.
UNIT
10
12.6
16
mA
f = 1 GHz

13.1

dB
f = 2 GHz

13.9

dB

11

dB
RL IN
return losses input
f = 1 GHz
f = 2 GHz

10

dB
RL OUT
return losses output
f = 1 GHz

18

dB
f = 2 GHz

13

dB
NF
noise figure
f = 1 GHz

4.8

dB
f = 2 GHz

4.8

dB
s212

3.6

GHz

2.8

dBm
3 dB below flat gain at 1 GHz
BW
bandwidth
at
PL(sat)
saturated load power
f = 1 GHz
f = 2 GHz

0.6

dBm
PL 1 dB
load power
at 1 dB gain compression; f = 1 GHz

0.7

dBm
at 1 dB gain compression; f = 2 GHz

1.8

dBm
IP3(in)
IP3(out)
2001 Oct 19
input intercept point
output intercept point
f = 1 GHz

4.8

dBm
f = 2 GHz

8.5

dBm
f = 1 GHz

8.3

dBm
f = 2 GHz

5.4

dBm
3
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2711 MMIC. The device is internally matched to 50 ,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.
DC-block
handbook, halfpage
DC-block
100 pF
100 pF
DC-block
100 pF
input
output
MGU437
The 22 nF supply decoupling capacitor, C1 should be
located as closely as possible to the MMIC.
Fig.3 Easy cascading application circuit.
Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
mixer
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
wideband
amplifier
Vshalfpage
handbook,
MGU438
oscillator
C1
Vs
RF in
RF input
RF out
C2
RF output
Fig.4 Application as IF amplifier.
C3
GND1
GND2
MGU435
Fig.2 Typical application circuit.
mixer
handbook, halfpage
to IF circuit
or demodulator
antenna
LNA
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
wideband
amplifier
MGU439
oscillator
Fig.5 Application as RF amplifier.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
mixer
handbook, halfpage
from modulation
or IF circuit
In Fig.6 the MMIC is used as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
to power
amplifier
wideband
amplifier
MGU440
oscillator
Fig.6 Application as driver amplifier.
2001 Oct 19
4
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
1 100 MHz 2
0.5
5
0°
0
3 GHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MGU441
1.0
−90°
IS = 12.6 mA; VS = 5 V; PD = 30 dBm; ZO = 50 
Fig.7 Input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
3 GHz
2
5
0°
0
100 MHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MGU442
IS = 12.6 mA; VS = 5 V; PD = 30 dBm; ZO = 50 
−90°
Fig.8 Output reflection coefficient (s22); typical values.
2001 Oct 19
5
1.0
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
MGU443
0
MGU444
20
handbook, halfpage
handbook, halfpage
s12 2
(dB)
s21 2
(dB)
−20
15
−40
10
−60
5
−80
0
0
1000
2000
0
3000
1000
2000
f (MHz)
IS = 12.6 mA; VS = 5 V; PD = 30 dBm; ZO = 50 
Fig.9
IS = 12.6 mA; VS = 5 V; PD = 30 dBm; ZO = 50 
Isolation (|s12|2) as a function of frequency;
typical values.
Fig.10 Insertion gain (|s21|2) as a function of
frequency; typical values.
MGU445
10
handbook, halfpage
PL
(dBm)
PL
(dBm)
0
0
−10
−10
−30
−20
−10
MGU446
10
handbook, halfpage
−20
−40
3000
f (MHz)
−20
−40
0
PD (dBm)
−30
−20
−10
0
PD (dBm)
VS = 5 V; f = 1 GHz; ZO = 50 
VS = 5 V; f = 2 GHz; ZO = 50 
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2 GHz; typical values.
2001 Oct 19
6
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
MGU447
10
MGU448
5
handbook, halfpage
handbook, halfpage
NF
(dB)
K
8
4
6
3
4
2
2
1
0
0
0
1000
2000
f (MHz)
3000
0
1000
2000
f (MHz)
3000
IS = 12.6 mA; VS = 5 V; ZO = 50 
IS = 12.6 mA; VS = 5 V; ZO = 50 
Fig.13 Noise figure as a function of frequency;
typical values.
Fig.14 Stability factor as a function of frequency;
typical values.
Scattering parameters: IS = 12.6 mA; PD = 30 dBm; ZO = 50 ; Tamb = 25 C
f
(MHz)
s11
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.14563
200
0.15253
400
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
3.502
4.4867
1.843
0.06220
2.939
0.13029
174.50
5.557
4.4944
6.788
0.06117
8.095
0.12640
169.58
0.18735
10.06
4.4841
15.22
0.05751
16.61
0.11957
148.02
600
0.22695
8.206
4.4862
22.94
0.05240
22.85
0.11288
126.58
800
0.26122
2.635
4.4985
30.57
0.04744
27.72
0.11286
104.24
1000
0.28776
2.465
4.5390
38.34
0.04187
31.17
0.12236
82.570
1200
0.30888
8.179
4.6052
46.14
0.03666
32.98
0.14066
65.815
1400
0.32055
13.16
4.6862
54.45
0.03251
33.25
0.16341
53.911
1600
0.32492
17.85
4.7929
63.29
0.02903
32.38
0.18689
45.122
1800
0.31849
22.43
4.9219
72.67
0.02624
29.24
0.20662
38.894
2000
0.30085
26.75
4.9973
83.08
0.02395
26.62
0.22092
33.706
2200
0.27106
31.57
5.0755
93.96
0.02228
22.20
0.22754
29.699
2400
0.23157
35.78
5.0668
106.1
0.02134
17.95
0.22679
26.622
2600
0.18594
40.38
4.9143
118.1
0.02176
13.86
0.21806
23.868
2800
0.13159
44.34
4.6797
129.6
0.02276
12.70
0.19660
22.060
3000
0.07266
41.76
4.3139
140.5
0.02241
17.06
0.16355
22.273
2001 Oct 19
7
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2001 Oct 19
REFERENCES
IEC
JEDEC
JEITA
SC-88
8
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
2001 Oct 19
9
NXP Semiconductors
Product specification
MMIC wideband amplifier
BGA2711
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to applying the
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may be interpreted or construed as an offer to sell products
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implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2001 Oct 19
10
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provides High Performance Mixed Signal and Standard Product
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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drawings which were updated to the latest version.
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Printed in The Netherlands
R77/02/pp11
Date of release: 2001 Oct 19