BLV1N60A

BLV1N60A
N-channel Enhancement Mode Power MOSFET
•
Avalanche Energy Specified
BVDSS
600V
•
Fast Switching
RDS(ON)
15Ω
Ω
•
Simple Drive Requirements
ID
0.5A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol
Parameter
Value
Units
VDS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
+ 20
V
Continuous Drain Current
0.5
A
Continuous Drain Current ( TC=100 oC)
0.32
A
2
A
3
W
0.025
W/℃
ID
IDM
Drain Current (pulsed)
(Note 1)
Power Dissipation
PD
Linear Derating Factor
EAS
Single Pulsed Avalanche Energy (Note 2)
3.5
mJ
IAR
Avalanche Current
(Note 1)
0.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.3
mJ
Tj
Operating Junction Temperature Range
TSDG
Storage Temperature Range
-55 to +150
o
-55 to +150
o
C
C
Thermal Characteristics
Symbol
Parameter
Rth j-c
Thermal Resistance, Junction to case
Rth j-a
Thermal Resistance, Junction to Ambient
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Max.
-1Total 6 Pages
Max.
Value
Units
-
℃/ W
120
℃/ W
3/28/2007
BLV1N60A
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
600
-
-
V
∆BVDSS
/∆TJ
Breakdown Voltage
Temperature Coefficient
Reference to 25℃,
ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance VGS=10V, ID=0.25A
-
-
15
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
g fs
Forward Transconductance (note3) VDS=15V, ID=0.25A
-
0.8
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125℃
VDS=600V, VGS=0V
-
-
1
uA
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage Current
VGS= ± 20V
-
-
±100
nA
Qg
Total Gate Charge
-
3
-
nC
Qgs
Gate-Source Charge
VDD=480V
ID=0.5A
VGS=10V
-
1
-
nC
Qgd
Gate-Drain Charge
-
1.2
-
nC
t (on)
Turn-on Delay Time
-
-
30
ns
tr
Turn-on Rise Time
-
-
60
ns
t (off)
Turn-off Delay Time
-
-
45
ns
tf
Turn-off Fall Time
-
-
75
ns
Ciss
Input Capacitance
-
105
-
pF
Coss
Output Capacitance
-
19
-
pF
Crss
Reverse Transfer Capacitance
-
2
-
pF
Min.
Typ.
Max.
Units
(note3)
VDD=300V
ID=0.5A
RG=25Ω
note3
(note3)
VDS=25V
VGS=0V
f = 1MHz
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Diode Forward Current
-
-
0.5
A
ISM
Pulsed Source Diode Forward Current
-
-
2
A
VSD
Forward On Voltage
VGS=0V, ID=0.5A
-
-
1.8
V
trr
Reverse Recovery Time(note3)
VGS=0V, IS=0.5A
-
136
-
ns
Qr r
Reverse Recovery Charge
dIF/dt =100A/us
-
0.3
-
uC
Note:
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=25mH, Ias=0.5A,Vdd=50V,Rg=25Ω,staring Tj=25C
(3) Pulse width ≤ 300 us; duty cycle ≤ 2%
http://www.belling.com.cn
-2Total 6 Pages
3/28/2007
BLV1N60A
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Transfer Characteristics
Fig 3. Normalized BVdss vs. Junction
Temperature
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Fig 4. Normalized On-Resistance vs.
Junction Temperature
-3Total 6 Pages
3/28/2007
BLV1N60A
N-channel Enhancement Mode Power MOSFET
Typical Characteristics (continued)
)
Fig 5. On-Resistance Variation vs.
Drain Current and Gate Voltage
Fig 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Fig 7. Gate Charge Characteristics
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Fig 8. Capacitance Characteristics
-4Total 6 Pages
3/28/2007
BLV1N60A
N-channel Enhancement Mode Power MOSFET
Typical Characteristics (continued)
)
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
http://www.belling.com.cn
-5Total 6 Pages
3/28/2007
BLV1N60A
N-channel Enhancement Mode Power MOSFET
Test Circuit and Waveform
Fig 11. Gate Charge Circuit
Fig 12. Gate Charge Waveform
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Unclamped Inductive
Switching Test Circuit
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Fig 16. Unclamped Inductive
Switching Waveforms
-6Total 6 Pages
3/28/2007